JP7245173B2 - 瞳透過率の設定による投影露光方法および投影レンズ - Google Patents

瞳透過率の設定による投影露光方法および投影レンズ Download PDF

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JP7245173B2
JP7245173B2 JP2019563374A JP2019563374A JP7245173B2 JP 7245173 B2 JP7245173 B2 JP 7245173B2 JP 2019563374 A JP2019563374 A JP 2019563374A JP 2019563374 A JP2019563374 A JP 2019563374A JP 7245173 B2 JP7245173 B2 JP 7245173B2
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plane
projection lens
field
pupil
diffractive
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JP2020520477A (ja
JP2020520477A5 (https=
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トラルフ グルナー
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0804—Catadioptric systems using two curved mirrors
    • G02B17/0812—Catadioptric systems using two curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Lasers (AREA)
JP2019563374A 2017-05-17 2018-05-11 瞳透過率の設定による投影露光方法および投影レンズ Active JP7245173B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017208340.9 2017-05-17
DE102017208340.9A DE102017208340A1 (de) 2017-05-17 2017-05-17 Projektionsbelichtungsverfahren und Projektionsobjektiv mit Einstellung der Pupillentransmission
PCT/EP2018/062201 WO2018210691A1 (en) 2017-05-17 2018-05-11 Projection exposure method and projection lens with setting of the pupil transmission

Publications (3)

Publication Number Publication Date
JP2020520477A JP2020520477A (ja) 2020-07-09
JP2020520477A5 JP2020520477A5 (https=) 2021-07-26
JP7245173B2 true JP7245173B2 (ja) 2023-03-23

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JP2019563374A Active JP7245173B2 (ja) 2017-05-17 2018-05-11 瞳透過率の設定による投影露光方法および投影レンズ

Country Status (5)

Country Link
US (2) US11143967B2 (https=)
JP (1) JP7245173B2 (https=)
DE (1) DE102017208340A1 (https=)
TW (1) TWI802572B (https=)
WO (1) WO2018210691A1 (https=)

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DE102017208340A1 (de) 2017-05-17 2018-11-22 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsobjektiv mit Einstellung der Pupillentransmission
JP7446068B2 (ja) * 2019-09-03 2024-03-08 キヤノン株式会社 露光装置、および、物品の製造方法
DE102020116091A1 (de) * 2019-10-30 2021-05-06 Taiwan Semiconductor Manufacturing Co., Ltd. Abstimmbare beleuchtungsvorrichtung fürlithographiesysteme
DE102019131327A1 (de) 2019-11-20 2021-05-20 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Messung von Substraten für die Halbleiterlithographie
KR102847325B1 (ko) * 2020-07-07 2025-08-14 삼성전자주식회사 퓨필 이미지 기반 패턴 균일도 측정 장치와 방법, 및 그 측정 방법을 이용한 마스크 제조방법
CN116710847A (zh) 2021-01-19 2023-09-05 卡尔蔡司Smt有限责任公司 设置投射曝光系统的方法、投射曝光方法以及用于微光刻的投射曝光系统
DE102021205328B3 (de) * 2021-05-26 2022-09-29 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung einer Abbildungsqualität eines optischen Systems bei Beleuchtung mit Beleuchtungslicht innerhalb einer zu vermessenden Pupille und Metrologiesystem dafür
US12386251B2 (en) 2023-01-20 2025-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system to introduce bright field imaging at stitching area of high-NA EUV exposure
TWI848645B (zh) * 2023-03-31 2024-07-11 上儀股份有限公司 雷射熱加工系統

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JP2010226123A (ja) 2010-05-11 2010-10-07 Carl Zeiss Smt Ag マスク、リソグラフィ装置及び半導体部品
US20130250264A1 (en) 2007-12-21 2013-09-26 Carl Zeiss Smt Gmbh Illumination system for illuminating a mask in a microlithographic exposure apparatus
WO2015007298A1 (en) 2013-07-17 2015-01-22 Carl Zeiss Smt Gmbh Microlithographic apparatus and method of varying a light irradiance distribution
JP2015517095A (ja) 2012-03-23 2015-06-18 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖレンズの結像品質を測定するための測定システム
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JP2007158328A (ja) 2005-11-30 2007-06-21 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
US20130250264A1 (en) 2007-12-21 2013-09-26 Carl Zeiss Smt Gmbh Illumination system for illuminating a mask in a microlithographic exposure apparatus
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JP2015517095A (ja) 2012-03-23 2015-06-18 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖレンズの結像品質を測定するための測定システム
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Also Published As

Publication number Publication date
WO2018210691A1 (en) 2018-11-22
TWI802572B (zh) 2023-05-21
TW201907446A (zh) 2019-02-16
US20200081350A1 (en) 2020-03-12
JP2020520477A (ja) 2020-07-09
US11143967B2 (en) 2021-10-12
US20220026814A1 (en) 2022-01-27
US11906904B2 (en) 2024-02-20
DE102017208340A1 (de) 2018-11-22

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