TWI802572B - 校正方法 - Google Patents

校正方法 Download PDF

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Publication number
TWI802572B
TWI802572B TW107116619A TW107116619A TWI802572B TW I802572 B TWI802572 B TW I802572B TW 107116619 A TW107116619 A TW 107116619A TW 107116619 A TW107116619 A TW 107116619A TW I802572 B TWI802572 B TW I802572B
Authority
TW
Taiwan
Prior art keywords
diffraction
diffractive
diffractive structures
correction
optical
Prior art date
Application number
TW107116619A
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English (en)
Chinese (zh)
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TW201907446A (zh
Inventor
托拉夫 葛納
Original Assignee
德商卡爾蔡司Ｓｍｔ有限公司
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Publication of TW201907446A publication Critical patent/TW201907446A/zh
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Publication of TWI802572B publication Critical patent/TWI802572B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0804—Catadioptric systems using two curved mirrors
    • G02B17/0812—Catadioptric systems using two curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Lasers (AREA)
TW107116619A 2017-05-17 2018-05-16 校正方法 TWI802572B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017208340.9 2017-05-17
DE102017208340.9A DE102017208340A1 (de) 2017-05-17 2017-05-17 Projektionsbelichtungsverfahren und Projektionsobjektiv mit Einstellung der Pupillentransmission
??102017208340.9 2017-05-17

Publications (2)

Publication Number Publication Date
TW201907446A TW201907446A (zh) 2019-02-16
TWI802572B true TWI802572B (zh) 2023-05-21

Family

ID=62152567

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107116619A TWI802572B (zh) 2017-05-17 2018-05-16 校正方法

Country Status (5)

Country Link
US (2) US11143967B2 (https=)
JP (1) JP7245173B2 (https=)
DE (1) DE102017208340A1 (https=)
TW (1) TWI802572B (https=)
WO (1) WO2018210691A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017208340A1 (de) 2017-05-17 2018-11-22 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsobjektiv mit Einstellung der Pupillentransmission
JP7446068B2 (ja) * 2019-09-03 2024-03-08 キヤノン株式会社 露光装置、および、物品の製造方法
DE102020116091A1 (de) * 2019-10-30 2021-05-06 Taiwan Semiconductor Manufacturing Co., Ltd. Abstimmbare beleuchtungsvorrichtung fürlithographiesysteme
DE102019131327A1 (de) 2019-11-20 2021-05-20 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Messung von Substraten für die Halbleiterlithographie
KR102847325B1 (ko) * 2020-07-07 2025-08-14 삼성전자주식회사 퓨필 이미지 기반 패턴 균일도 측정 장치와 방법, 및 그 측정 방법을 이용한 마스크 제조방법
CN116710847A (zh) 2021-01-19 2023-09-05 卡尔蔡司Smt有限责任公司 设置投射曝光系统的方法、投射曝光方法以及用于微光刻的投射曝光系统
DE102021205328B3 (de) * 2021-05-26 2022-09-29 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung einer Abbildungsqualität eines optischen Systems bei Beleuchtung mit Beleuchtungslicht innerhalb einer zu vermessenden Pupille und Metrologiesystem dafür
US12386251B2 (en) 2023-01-20 2025-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system to introduce bright field imaging at stitching area of high-NA EUV exposure
TWI848645B (zh) * 2023-03-31 2024-07-11 上儀股份有限公司 雷射熱加工系統

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100195070A1 (en) * 2007-08-03 2010-08-05 Carl Zeiss Smt Ag Projection objective for microlithography, projection exposure apparatus, projection exposure method and optical correction plate
WO2015007298A1 (en) * 2013-07-17 2015-01-22 Carl Zeiss Smt Gmbh Microlithographic apparatus and method of varying a light irradiance distribution

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2248491B (en) 1986-12-04 1992-09-02 Schneider Metal Mfg A method of making ice cubes
US5614990A (en) * 1994-08-31 1997-03-25 International Business Machines Corporation Illumination tailoring system using photochromic filter
JP3459773B2 (ja) * 1998-06-24 2003-10-27 キヤノン株式会社 投影露光装置及びデバイスの製造方法
US6118577A (en) * 1998-08-06 2000-09-12 Euv, L.L.C Diffractive element in extreme-UV lithography condenser
US6262795B1 (en) * 1998-08-28 2001-07-17 Philip Semiconductors, Inc. Apparatus and method for the improvement of illumination uniformity in photolithographic systems
US6545829B1 (en) * 2000-08-21 2003-04-08 Micron Technology, Inc. Method and device for improved lithographic critical dimension control
DE10123230A1 (de) 2001-05-12 2002-11-28 Zeiss Carl Diffraktives optisches Element sowie optische Anordnung mit einem diffraktiven optischen Element
DE10218989A1 (de) 2002-04-24 2003-11-06 Zeiss Carl Smt Ag Projektionsverfahren und Projektionssystem mit optischer Filterung
DE602005008707D1 (de) 2004-01-14 2008-09-18 Zeiss Carl Smt Ag Catadioptrisches projektionsobjektiv
KR101199076B1 (ko) 2004-06-04 2012-11-07 칼 짜이스 에스엠티 게엠베하 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소
DE102006028242A1 (de) 2005-07-07 2007-01-18 Carl Zeiss Smt Ag Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage
GB2428491A (en) 2005-07-18 2007-01-31 Zeiss Carl Smt Ag Catadioptric Optical System with Diffractive Optical Element
US20070121090A1 (en) 2005-11-30 2007-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8169703B1 (en) * 2006-09-06 2012-05-01 Lightsmyth Technologies Inc. Monolithic arrays of diffraction gratings
US7947412B2 (en) 2007-03-29 2011-05-24 Micron Technology, Inc. Reduced lens heating methods, apparatus, and systems
DE102007043896A1 (de) 2007-09-14 2009-04-02 Carl Zeiss Smt Ag Mikrooptik zur Messung der Position eines Luftbildes
EP2388649B1 (en) 2007-12-21 2013-06-19 Carl Zeiss SMT GmbH Illumination system for illuminating a mask in a microlithographic exposure apparatus
DE102008054737A1 (de) 2008-01-10 2009-07-16 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie Objektiv hierfür
US7855776B2 (en) 2008-03-26 2010-12-21 Qimonda Ag Methods of compensating lens heating, lithographic projection system and photo mask
JP5070316B2 (ja) 2010-05-11 2012-11-14 カール・ツァイス・エスエムティー・ゲーエムベーハー マスク
US9372413B2 (en) * 2011-04-15 2016-06-21 Asml Netherlands B.V. Optical apparatus for conditioning a radiation beam for use by an object, lithography apparatus and method of manufacturing devices
US8609302B2 (en) 2011-08-22 2013-12-17 Micron Technology, Inc. Lithography methods, methods for forming patterning tools and patterning tools
DE102011084152A1 (de) * 2011-10-07 2013-04-11 Carl Zeiss Smt Gmbh Verfahren zur Einstellung der Intensitätsverteilung in einem optischen System einer mikrolithographischen Projektionsbelichtungsanlage, sowie optisches System
JP6315343B2 (ja) * 2012-02-21 2018-04-25 カール ツァイス エスエムエス リミテッド 光学系の少なくとも１つの欠陥を補償する方法
DE102012202675A1 (de) 2012-02-22 2013-01-31 Carl Zeiss Smt Gmbh Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithografie mit einer derartigen abbildenden Optik
DE102012204704A1 (de) 2012-03-23 2013-09-26 Carl Zeiss Smt Gmbh Messvorrichtung zum Vermessen einer Abbildungsgüte eines EUV-Objektives
DE102013205568A1 (de) * 2013-03-28 2014-03-06 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage mit einem variablen Transmissionsfilter
DE102013218991A1 (de) 2013-09-20 2015-03-26 Carl Zeiss Smt Gmbh Vorrichtung zum Bestimmen einer optischen Eigenschaft eines optischen Abbildungssystems
DE102015223795A1 (de) 2015-11-30 2016-01-28 Carl Zeiss Smt Gmbh Verfahren zum Bearbeiten eines optischen Elements
DE102017208340A1 (de) 2017-05-17 2018-11-22 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsobjektiv mit Einstellung der Pupillentransmission

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100195070A1 (en) * 2007-08-03 2010-08-05 Carl Zeiss Smt Ag Projection objective for microlithography, projection exposure apparatus, projection exposure method and optical correction plate
WO2015007298A1 (en) * 2013-07-17 2015-01-22 Carl Zeiss Smt Gmbh Microlithographic apparatus and method of varying a light irradiance distribution

Also Published As

Publication number Publication date
WO2018210691A1 (en) 2018-11-22
TW201907446A (zh) 2019-02-16
US20200081350A1 (en) 2020-03-12
JP2020520477A (ja) 2020-07-09
US11143967B2 (en) 2021-10-12
US20220026814A1 (en) 2022-01-27
US11906904B2 (en) 2024-02-20
JP7245173B2 (ja) 2023-03-23
DE102017208340A1 (de) 2018-11-22

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