JP7238791B2 - 封止組成物及び半導体装置 - Google Patents
封止組成物及び半導体装置 Download PDFInfo
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- JP7238791B2 JP7238791B2 JP2019562046A JP2019562046A JP7238791B2 JP 7238791 B2 JP7238791 B2 JP 7238791B2 JP 2019562046 A JP2019562046 A JP 2019562046A JP 2019562046 A JP2019562046 A JP 2019562046A JP 7238791 B2 JP7238791 B2 JP 7238791B2
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- 238000005538 encapsulation Methods 0.000 description 1
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- 125000003700 epoxy group Chemical group 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 239000004206 montan acid ester Substances 0.000 description 1
- 235000013872 montan acid ester Nutrition 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- XFFPIAQRIDTSIZ-UHFFFAOYSA-N n'-[3-(dimethoxymethylsilyl)propyl]ethane-1,2-diamine Chemical compound COC(OC)[SiH2]CCCNCCN XFFPIAQRIDTSIZ-UHFFFAOYSA-N 0.000 description 1
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 150000007519 polyprotic acids Polymers 0.000 description 1
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- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- WIBQWGGMNZFKOE-UHFFFAOYSA-N silane N-(3-trimethoxysilylpropyl)aniline Chemical class [SiH4].C1(=CC=CC=C1)NCCC[Si](OC)(OC)OC WIBQWGGMNZFKOE-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- QLAGHGSFXJZWKY-UHFFFAOYSA-N triphenylborane;triphenylphosphane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QLAGHGSFXJZWKY-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/005—Additives being defined by their particle size in general
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
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| JP2023032122A JP7571810B2 (ja) | 2017-12-28 | 2023-03-02 | 封止組成物及び半導体装置 |
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| JP (2) | JP7238791B2 (enExample) |
| KR (2) | KR20250016469A (enExample) |
| CN (1) | CN111566163B (enExample) |
| TW (1) | TWI797222B (enExample) |
| WO (1) | WO2019131669A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2023067951A (ja) * | 2017-12-28 | 2023-05-16 | 株式会社レゾナック | 封止組成物及び半導体装置 |
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| KR20230164858A (ko) | 2022-05-26 | 2023-12-05 | 동우 화인켐 주식회사 | 반도체 소자 밀봉용 조성물 및 이를 이용하여 밀봉된 반도체 소자 |
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| JP2005290076A (ja) | 2004-03-31 | 2005-10-20 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物及び半導体装置 |
| JP2010024464A (ja) | 2009-11-04 | 2010-02-04 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物及び半導体装置 |
| JP2014122364A (ja) | 2014-03-20 | 2014-07-03 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物、このエポキシ樹脂組成物が使用された半導体装置、有機修飾無機充填材、エポキシ樹脂組成物の製造方法 |
| JP2015205796A (ja) | 2014-04-21 | 2015-11-19 | 新日鉄住金マテリアルズ株式会社 | 球状粒子及びその製造方法、並びにそれを含有する樹脂組成物 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2874089B2 (ja) * | 1994-04-13 | 1999-03-24 | 信越化学工業株式会社 | 半導体封止用樹脂組成物及び半導体装置 |
| JP4112396B2 (ja) * | 2003-02-13 | 2008-07-02 | 電気化学工業株式会社 | 樹脂用充填材および用途 |
| JP4774778B2 (ja) | 2005-03-28 | 2011-09-14 | 住友ベークライト株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
| KR101398732B1 (ko) * | 2006-10-06 | 2014-05-27 | 스미토모 베이클리트 컴퍼니 리미티드 | 반도체 봉지용 에폭시 수지 조성물 및 반도체 장치 |
| JP4973322B2 (ja) * | 2007-06-04 | 2012-07-11 | 住友ベークライト株式会社 | エポキシ樹脂組成物及び半導体装置 |
| SG190615A1 (en) * | 2008-04-30 | 2013-06-28 | Denki Kagaku Kogyo Kk | Alumina powder, process for production of the same, and resin compositions containing the same |
| CN102382422B (zh) * | 2010-09-01 | 2013-01-02 | 北京科化新材料科技有限公司 | 包含一水合氧化铝的环氧树脂组合物 |
| JP6282390B2 (ja) * | 2010-12-16 | 2018-02-21 | 日立化成株式会社 | 封止用エポキシ樹脂成形材料及びこれを用いた半導体装置 |
| JP2013028659A (ja) * | 2011-07-26 | 2013-02-07 | Hitachi Chemical Co Ltd | アンダーフィル用エポキシ樹脂液状封止材及びこれを用いた電子部品装置 |
| SG11201405097QA (en) * | 2012-03-29 | 2014-10-30 | Sumitomo Bakelite Co | Resin composition and semiconductor device |
| JP2014031460A (ja) * | 2012-08-06 | 2014-02-20 | Panasonic Corp | 封止用エポキシ樹脂組成物及びそれを用いた半導体装置 |
| KR20160024917A (ko) * | 2013-06-27 | 2016-03-07 | 히타치가세이가부시끼가이샤 | 수지 조성물, 수지 시트, 수지 시트 경화물, 수지 시트 구조체, 수지 시트 구조체 경화물, 수지 시트 구조체 경화물의 제조 방법, 반도체 장치 및 led 장치 |
| EP3064521B1 (en) * | 2014-01-08 | 2018-07-11 | Shin-Etsu Chemical Co., Ltd | Liquid epoxy resin composition for semiconductor sealing and resin-sealed semiconductor device |
| US10294341B2 (en) * | 2016-01-13 | 2019-05-21 | Lg Chem, Ltd. | Thermosetting resin composition for semiconductor package and prepreg using the same |
| JP7238791B2 (ja) * | 2017-12-28 | 2023-03-14 | 株式会社レゾナック | 封止組成物及び半導体装置 |
-
2018
- 2018-12-25 JP JP2019562046A patent/JP7238791B2/ja active Active
- 2018-12-25 KR KR1020257001450A patent/KR20250016469A/ko active Pending
- 2018-12-25 CN CN201880084098.XA patent/CN111566163B/zh active Active
- 2018-12-25 WO PCT/JP2018/047642 patent/WO2019131669A1/ja not_active Ceased
- 2018-12-25 KR KR1020207018215A patent/KR102815688B1/ko active Active
- 2018-12-26 TW TW107147230A patent/TWI797222B/zh active
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005290076A (ja) | 2004-03-31 | 2005-10-20 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物及び半導体装置 |
| JP2010024464A (ja) | 2009-11-04 | 2010-02-04 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物及び半導体装置 |
| JP2014122364A (ja) | 2014-03-20 | 2014-07-03 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物、このエポキシ樹脂組成物が使用された半導体装置、有機修飾無機充填材、エポキシ樹脂組成物の製造方法 |
| JP2015205796A (ja) | 2014-04-21 | 2015-11-19 | 新日鉄住金マテリアルズ株式会社 | 球状粒子及びその製造方法、並びにそれを含有する樹脂組成物 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023067951A (ja) * | 2017-12-28 | 2023-05-16 | 株式会社レゾナック | 封止組成物及び半導体装置 |
| JP7571810B2 (ja) | 2017-12-28 | 2024-10-23 | 株式会社レゾナック | 封止組成物及び半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102815688B1 (ko) | 2025-06-04 |
| KR20200103682A (ko) | 2020-09-02 |
| JP7571810B2 (ja) | 2024-10-23 |
| CN111566163A (zh) | 2020-08-21 |
| KR20250016469A (ko) | 2025-02-03 |
| TWI797222B (zh) | 2023-04-01 |
| WO2019131669A1 (ja) | 2019-07-04 |
| CN111566163B (zh) | 2024-02-13 |
| TW201934650A (zh) | 2019-09-01 |
| JP2023067951A (ja) | 2023-05-16 |
| JPWO2019131669A1 (ja) | 2020-12-24 |
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