JP7234703B2 - 炭化ケイ素多結晶基板の製造方法、及び、炭化ケイ素多結晶基板の製造装置 - Google Patents

炭化ケイ素多結晶基板の製造方法、及び、炭化ケイ素多結晶基板の製造装置 Download PDF

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JP7234703B2
JP7234703B2 JP2019043348A JP2019043348A JP7234703B2 JP 7234703 B2 JP7234703 B2 JP 7234703B2 JP 2019043348 A JP2019043348 A JP 2019043348A JP 2019043348 A JP2019043348 A JP 2019043348A JP 7234703 B2 JP7234703 B2 JP 7234703B2
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substrate
silicon carbide
vapor deposition
polycrystalline
furnace
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JP2020149988A5 (enExample
JP2020149988A (ja
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英一郎 西村
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Sumitomo Metal Mining Co Ltd
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Sumitomo Metal Mining Co Ltd
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JP2024121436A (ja) * 2023-02-27 2024-09-06 住友金属鉱山株式会社 ＳｉＣ半導体装置用基板、ＳｉＣ接合基板、ＳｉＣ多結晶基板およびＳｉＣ多結晶基板の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003249426A (ja) 2002-02-22 2003-09-05 Mitsui Eng & Shipbuild Co Ltd ＳｉＣモニタウェハ製造方法
JP2007182304A (ja) 2006-01-06 2007-07-19 Tokyo Electron Ltd 基板搬送装置、基板搬送方法及びコンピュータプログラム
JP2009260117A (ja) 2008-04-18 2009-11-05 Tohoku Univ 炭化珪素基板、半導体装置、配線基板及び炭化珪素の製造方法
JP2015079946A (ja) 2013-09-13 2015-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2016038664A1 (ja) 2014-09-08 2016-03-17 三菱電機株式会社 半導体アニール装置
JP2018181969A (ja) 2017-04-07 2018-11-15 株式会社 天谷製作所 処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2625880B2 (ja) * 1988-05-16 1997-07-02 三井造船株式会社 ＳｉＣ製サセプタの製造方法
JP2690862B2 (ja) * 1994-07-29 1997-12-17 シーケーディ株式会社 真空チャック装置からのワークの取り外し方法及びワークの取り外し装置
JPH10265265A (ja) * 1997-03-26 1998-10-06 Mitsubishi Materials Corp ＳｉＣ部材及びその製造方法
JPH11199323A (ja) * 1998-01-14 1999-07-27 Tokai Carbon Co Ltd ダミーウエハ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003249426A (ja) 2002-02-22 2003-09-05 Mitsui Eng & Shipbuild Co Ltd ＳｉＣモニタウェハ製造方法
JP2007182304A (ja) 2006-01-06 2007-07-19 Tokyo Electron Ltd 基板搬送装置、基板搬送方法及びコンピュータプログラム
JP2009260117A (ja) 2008-04-18 2009-11-05 Tohoku Univ 炭化珪素基板、半導体装置、配線基板及び炭化珪素の製造方法
JP2015079946A (ja) 2013-09-13 2015-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2016038664A1 (ja) 2014-09-08 2016-03-17 三菱電機株式会社 半導体アニール装置
JP2018181969A (ja) 2017-04-07 2018-11-15 株式会社 天谷製作所 処理装置

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