JP7228815B2 - 光デバイス、光電変換装置、および燃料生成装置 - Google Patents
光デバイス、光電変換装置、および燃料生成装置 Download PDFInfo
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- JP7228815B2 JP7228815B2 JP2019546570A JP2019546570A JP7228815B2 JP 7228815 B2 JP7228815 B2 JP 7228815B2 JP 2019546570 A JP2019546570 A JP 2019546570A JP 2019546570 A JP2019546570 A JP 2019546570A JP 7228815 B2 JP7228815 B2 JP 7228815B2
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
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- C25B1/04—Hydrogen or oxygen by electrolysis of water
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
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Description
光デバイスの一例として、ショットキーデバイスの実施形態を説明する。
次に、ショットキーデバイスを備えた光電変換装置の実施形態を説明する。
光デバイスのさらに他の例として、ショットキーデバイスを備えた燃料生成装置の実施形態を説明する。
次に、光電変換装置を用いて光電変換する方法の実施形態を説明する。
・工程(a):少なくとも1つの合金ナノ粒子およびn型半導体を備える光電変換装置を用意する。
・工程(b):少なくとも1つの合金ナノ粒子に光を照射して、電流を発生させる。
以下、本開示の実施例を説明する。
本開示に係る光電変換方法における合金ナノ粒子の仕事関数を第一原理計算プログラムVASP(Vienna Ab-initio Simulation Package)を用いて評価した。各金属、合金に対して結晶構造の安定化計算で格子定数を求めた後に、5~7原子層からなる真空スラブモデルを切り出した。真空スラブモデルにおいては真空部分のポテンシャルとスラブ部分のフェルミエネルギーとの差分によって仕事関数が算出される。各モデルにおいて平面波のカットオフエネルギーは400eVとし、0.5/Å(すなわち、5/nm)のk点メッシュを用い、交換相互作用にはGGA-PAW法を用いて計算を行った。
Fowlerの理論に基づくと、光電変換効率ηは以下の式で表される。
Auナノ粒子を用いるよりもAu4Tiナノ粒子を光電変換層に用いることでデバイスの光電変換効率が大きく向上することが示された。Au4Tiにおいては表面のTi原子が不安定であり表面にはAu原子しかいないことを考えると、このナノ粒子が酸化されて表面状態が変化することは想定しにくい。しかし、第一原理計算を用いて表面への酸素の吸着エネルギーを評価することにより、Au4Tiナノ粒子の表面酸化に対する安定性を評価した。
12 n型半導体
13 優れたプラズモン特性を有する金属
14 仕事関数の低い金属
15 コア
16 透明導電膜
17 絶縁膜
18 オーミック電極
19 導線
20 光源
21 オーミック電極
22 酸化反応槽
23 還元反応槽
24 プロトン透過膜
25 第1電解液
26 第2電解液
27 還元電極
28 石英ガラス窓
31 金属膜
100A、100B、100C、100D、100E ショットキーデバイス
200A、200B 光電変換装置
200C 燃料生成装置
Claims (29)
- 第1金属および前記第1金属よりも仕事関数の低い第2金属の金属間化合物、または前記第1金属および前記第2金属の固溶体合金と、
前記金属間化合物または前記固溶体合金にショットキー接合するn型半導体と、を備え、
近赤外光を検出する、光デバイス。 - 前記近赤外光のエネルギーは、前記n型半導体のバンドギャップエネルギーよりも低い、請求項1に記載の光デバイス。
- 前記n型半導体は、シリコン(Si)半導体である、請求項1に記載の光デバイス。
- 前記ショットキー接合のショットキー障壁の高さは、前記近赤外光のエネルギーよりも低い、請求項1に記載の光デバイス。
- 前記第1金属は、金(Au)、銀(Ag)、銅(Cu)、およびアルミニウム(Al)からなる群から選択される少なくとも一種の金属であり、
前記第2金属は、チタン(Ti)、クロム(Cr)、銀(Ag)、銅(Cu)、アルミニウム(Al)、ニッケル(Ni)、マンガン(Mn)、鉄(Fe)、亜鉛(Zn)、ガリウム(Ga)、およびタンタル(Ta)からなる群から選択される少なくとも一種の金属である、請求項1に記載の光デバイス。 - 前記金属間化合物または前記固溶体合金に含まれる前記第1金属の物質量は、前記金属間化合物または前記固溶体合金に含まれる前記第2金属の物質量よりも多い、請求項1に記載の光デバイス。
- 前記金属間化合物または前記固溶体合金は、Au4Tiである、請求項1に記載の光デバイス。
- 前記n型半導体は、無機半導体である、請求項1に記載の光デバイス。
- 前記金属間化合物または前記固溶体合金は、くし形構造を有する、請求項1に記載の光デバイス。
- 少なくとも1つのナノ粒子を更に備え、
前記金属間化合物または前記固溶体合金は、前記少なくとも1つのナノ粒子に含まれる、請求項1に記載の光デバイス。 - 前記少なくとも1つのナノ粒子の粒子径は、1nm以上200nm以下である、請求項10に記載の光デバイス。
- 前記少なくとも1つのナノ粒子は、複数のナノ粒子であり、
前記複数のナノ粒子を相互に電気的に接続する金属膜をさらに備える、請求項10に記載の光デバイス。 - 前記金属膜は、前記第1金属および前記第2金属を含む、請求項12に記載の光デバイス。
- 前記金属膜は、前記n型半導体の表面の少なくとも一部を被覆している、請求項12に記載の光デバイス。
- 前記少なくとも1つのナノ粒子は、それぞれ、前記金属間化合物または前記固溶体合金に囲まれた空洞を有する、請求項10に記載の光デバイス。
- 前記少なくとも1つのナノ粒子は、それぞれ、金(Au)、銀(Ag)、銅(Cu)、アルミニウム(Al)、ポリマー材料、およびシリカからなる群から選択される少なくとも一つを含むコア部を含み、
各ナノ粒子において、前記金属間化合物または前記固溶体合金は、前記コア部を少なくとも部分的に覆っている、請求項10に記載の光デバイス。 - 前記コア部は、金(Au)、銀(Ag)、銅(Cu)、アルミニウム(Al)、ポリマー材料、またはシリカを含む、請求項16に記載の光デバイス。
- 各ナノ粒子において、前記金属間化合物または前記固溶体合金は、前記コア部の全体を覆っている、請求項16に記載の光デバイス。
- 各ナノ粒子において、前記金属間化合物または前記固溶体合金は、複数の部分に分離されており、
前記複数の部分は、前記コア部の周囲に、隙間を隔てて分布している、請求項16に記載の光デバイス。 - 前記n型半導体のバンドギャップエネルギー以下で、かつ、前記少なくとも1つのナノ粒子のプラズモン共鳴波長に相当するエネルギーをもつ光を出射する光源をさらに備える、請求項10に記載の光デバイス。
- 前記n型半導体は、シリコン半導体、ゲルマニウム半導体、およびガリウムヒ素半導体からなる群から選択される少なくとも1つを含み、
前記少なくとも1つのナノ粒子における表面プラズモン共鳴波長は900nm以上である、請求項10に記載の光デバイス。 - 前記n型半導体は、酸化チタン(TiO2)半導体、窒化ガリウム(GaN)半導体、
チタン酸ストロンチウム(SrTiO3)半導体からなる群から選択される少なくとも1つを含み、
前記少なくとも1つのナノ粒子における表面プラズモン共鳴波長は400nm以上である、請求項10に記載の光デバイス。 - 第1金属および前記第1金属よりも仕事関数の低い第2金属の金属間化合物、または前記第1金属および前記第2金属の固溶体合金と、前記金属間化合物または前記固溶体合金にショットキー接合するn型半導体と、を備え、近赤外光を検出する光デバイスと、
第1電極と、
前記第1電極と前記金属間化合物または前記固溶体合金とを電気的に接続する導線と、を備える光電変換装置であって、
前記n型半導体は、前記金属間化合物または前記固溶体合金に対向する第1の表面と、前記第1の表面の反対側の第2の表面とを有し、
前記第1電極は、前記n型半導体の前記第2の表面に接する光電変換装置。 - 前記n型半導体の前記第1の表面上に配置された絶縁膜と、
前記絶縁膜および前記金属間化合物または前記固溶体合金を覆う透明導電膜と、をさらに備え、
前記透明導電膜と前記n型半導体とは接しておらず、
前記導線は、前記第1電極と、前記透明導電膜とを電気的に接続する、請求項23に記載の光電変換装置。 - 前記光デバイスは、
前記金属間化合物または前記固溶体合金を含む複数のナノ粒子と、
前記n型半導体上の前記第1の表面上に配置され、前記複数のナノ粒子を互いに電気的に接続する金属膜と、
前記金属膜に接する第2電極と、を備え、
前記導線は、前記第1電極と前記第2電極とを電気的に接続する、請求項23に記載の光電変換装置。 - 第1金属および前記第1金属よりも仕事関数の低い第2金属の金属間化合物、または前記第1金属および前記第2金属の固溶体合金と、前記金属間化合物または前記固溶体合金にショットキー接合するn型半導体と、を備え、近赤外光を検出する光デバイスと、
前記光デバイスにおける前記n型半導体に接する第1電極と、
第1電解液および前記光デバイスを収容する酸化反応槽と、
第2電解液および第2電極を収容する還元反応槽と、
前記酸化反応槽と前記還元反応槽との境界に位置するプロトン透過膜と、
前記第1電極および前記第2電極を接続する導線と、を備え、
前記光デバイスは、前記第1電解液に接し、
前記第2電極は、前記第2電解液に接している、燃料生成装置。 - 前記第1電極は、白金、白金を含む合金、または白金化合物であり、
前記光デバイスにおける前記金属間化合物または前記固溶体合金に、前記第1金属の表面プラズモン共鳴波長に相当するエネルギーの光が入射したときに、前記第2電極に水素が発生する、請求項26に記載の燃料生成装置。 - 前記第1電解液は、炭酸水素カリウム(KHCO3)、炭酸水素ナトリウム(NaHCO3)、水酸化カリウム(KOH)、および水酸化ナトリウム(NaOH)からなる群か
ら選択される少なくとも1種を含む水溶液である、請求項26に記載の燃料生成装置。 - 前記第2電解液は、炭酸水素カリウム(KHCO3)、炭酸水素ナトリウム(NaHCO3)、塩化カリウム(KCl)、および塩化ナトリウム(NaCl)からなる群から選択される少なくとも1種を含む水溶液である、請求項26に記載の燃料生成装置。
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JP2015098643A (ja) | 2013-10-17 | 2015-05-28 | パナソニックIpマネジメント株式会社 | 光電気化学セル及びそれを用いた水素発生方法 |
JP2015182334A (ja) | 2014-03-25 | 2015-10-22 | 東レ株式会社 | 金属ドット基板およびその製造方法 |
JP2016162890A (ja) | 2015-03-02 | 2016-09-05 | 国立大学法人北海道大学 | 光電変換素子、光電変換装置、および光電変換素子の製造方法 |
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