JP7227230B2 - 熱アシスト負電子親和性フォトカソード - Google Patents

熱アシスト負電子親和性フォトカソード Download PDF

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JP7227230B2
JP7227230B2 JP2020514947A JP2020514947A JP7227230B2 JP 7227230 B2 JP7227230 B2 JP 7227230B2 JP 2020514947 A JP2020514947 A JP 2020514947A JP 2020514947 A JP2020514947 A JP 2020514947A JP 7227230 B2 JP7227230 B2 JP 7227230B2
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Prior art keywords
photocathode
layer
barrier
thermionic
conduction band
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Japanese (ja)
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JP2020533760A5 (cg-RX-API-DMAC7.html
JP2020533760A (ja
Inventor
ケネス エー． コステロ，
ヴァール アービィ，
マイケル ユルコビッチ，
シー ツォン，
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インテヴァック インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/26—Image pick-up tubes having an input of visible light and electric output
    • H01J31/48—Tubes with amplification of output effected by electron multiplier arrangements within the vacuum space
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2231/00—Cathode ray tubes or electron beam tubes
    • H01J2231/50—Imaging and conversion tubes
    • H01J2231/501—Imaging and conversion tubes including multiplication stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/04—Cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/49—Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
JP2020514947A 2017-09-12 2018-09-12 熱アシスト負電子親和性フォトカソード Active JP7227230B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/702,647 US10692683B2 (en) 2017-09-12 2017-09-12 Thermally assisted negative electron affinity photocathode
US15/702,647 2017-09-12
PCT/US2018/050735 WO2019055554A1 (en) 2017-09-12 2018-09-12 PHOTOCATHODE WITH THERMALLY ASSISTED NEGATIVE ELECTRONIC AFFINITY

Publications (3)

Publication Number Publication Date
JP2020533760A JP2020533760A (ja) 2020-11-19
JP2020533760A5 JP2020533760A5 (cg-RX-API-DMAC7.html) 2021-10-21
JP7227230B2 true JP7227230B2 (ja) 2023-02-21

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JP2020514947A Active JP7227230B2 (ja) 2017-09-12 2018-09-12 熱アシスト負電子親和性フォトカソード

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Country Link
US (1) US10692683B2 (cg-RX-API-DMAC7.html)
EP (1) EP3682461B1 (cg-RX-API-DMAC7.html)
JP (1) JP7227230B2 (cg-RX-API-DMAC7.html)
AU (1) AU2018332878B2 (cg-RX-API-DMAC7.html)
CA (1) CA3075509C (cg-RX-API-DMAC7.html)
IL (1) IL273140B2 (cg-RX-API-DMAC7.html)
WO (1) WO2019055554A1 (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11621289B2 (en) * 2020-05-22 2023-04-04 Eotech, Llc Compact proximity focused image sensor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000090817A (ja) 1998-09-11 2000-03-31 Daido Steel Co Ltd 偏極電子線発生素子
US20020180343A1 (en) 2001-05-31 2002-12-05 Smith Arlynn Walter Short wavelength infrared cathode
US20040232403A1 (en) 2003-05-22 2004-11-25 Sillmon Roger S. Tuned bandwidth photocathode for transmission negative electron affinity devices
JP2015536012A (ja) 2012-08-03 2015-12-17 ケーエルエー−テンカー コーポレイション ホウ素層を有するシリコン基板を含むフォトカソード

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FR2507386A1 (fr) * 1981-06-03 1982-12-10 Labo Electronique Physique Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage
FR2592217B1 (fr) * 1985-12-20 1988-02-05 Thomson Csf Photocathode a amplification interne
US5268612A (en) * 1991-07-01 1993-12-07 Intevac, Inc. Feedback limited microchannel plate
JPH0512989A (ja) * 1991-07-01 1993-01-22 Nec Corp 半導体光電面およびその製造方法
US5268570A (en) 1991-12-20 1993-12-07 Litton Systems, Inc. Transmission mode InGaAs photocathode for night vision system
US5349177A (en) * 1993-02-22 1994-09-20 Itt Corporation Image intensifier tube having a solid state electron amplifier
US5597112A (en) 1994-10-13 1997-01-28 Knapp; Frederick W. Collapsible octahedral container
US6005257A (en) * 1995-09-13 1999-12-21 Litton Systems, Inc. Transmission mode photocathode with multilayer active layer for night vision and method
US5712490A (en) * 1996-11-21 1998-01-27 Itt Industries, Inc. Ramp cathode structures for vacuum emission
US6350999B1 (en) * 1999-02-05 2002-02-26 Matsushita Electric Industrial Co., Ltd. Electron-emitting device
US6957992B2 (en) * 1999-03-18 2005-10-25 Litton Systems, Inc. Image intensification tube
US6483231B1 (en) * 1999-05-07 2002-11-19 Litton Systems, Inc. Night vision device and method
JPWO2002078144A1 (ja) * 2001-03-27 2004-07-15 シャープ株式会社 半導体装置及び結晶成長方法
JP2004179318A (ja) * 2002-11-26 2004-06-24 Nec Compound Semiconductor Devices Ltd 接合型電界効果トランジスタ及びその製造方法
US7838869B2 (en) * 2005-10-21 2010-11-23 Georgia State University Research Foundation, Inc. Dual band photodetector
JP5267931B2 (ja) 2008-10-29 2013-08-21 独立行政法人理化学研究所 光陰極半導体素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000090817A (ja) 1998-09-11 2000-03-31 Daido Steel Co Ltd 偏極電子線発生素子
US20020180343A1 (en) 2001-05-31 2002-12-05 Smith Arlynn Walter Short wavelength infrared cathode
US20040232403A1 (en) 2003-05-22 2004-11-25 Sillmon Roger S. Tuned bandwidth photocathode for transmission negative electron affinity devices
JP2015536012A (ja) 2012-08-03 2015-12-17 ケーエルエー−テンカー コーポレイション ホウ素層を有するシリコン基板を含むフォトカソード

Also Published As

Publication number Publication date
IL273140B2 (en) 2024-10-01
IL273140A (en) 2020-04-30
US10692683B2 (en) 2020-06-23
IL273140B1 (en) 2024-06-01
EP3682461B1 (en) 2024-11-06
US20190080875A1 (en) 2019-03-14
WO2019055554A1 (en) 2019-03-21
AU2018332878A1 (en) 2020-04-09
CA3075509C (en) 2024-05-14
CA3075509A1 (en) 2019-03-21
JP2020533760A (ja) 2020-11-19
EP3682461A4 (en) 2021-11-10
AU2018332878B2 (en) 2023-03-30
EP3682461A1 (en) 2020-07-22

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