JP7226747B2 - 誘電体膜およびそれを用いたキャパシタならびに誘電体膜の製造方法 - Google Patents
誘電体膜およびそれを用いたキャパシタならびに誘電体膜の製造方法 Download PDFInfo
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- JP7226747B2 JP7226747B2 JP2021524802A JP2021524802A JP7226747B2 JP 7226747 B2 JP7226747 B2 JP 7226747B2 JP 2021524802 A JP2021524802 A JP 2021524802A JP 2021524802 A JP2021524802 A JP 2021524802A JP 7226747 B2 JP7226747 B2 JP 7226747B2
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- dielectric film
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- 238000004519 manufacturing process Methods 0.000 title claims description 39
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- 239000001301 oxygen Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 238000007740 vapor deposition Methods 0.000 claims description 7
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- 238000004458 analytical method Methods 0.000 description 9
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- 229910052746 lanthanum Inorganic materials 0.000 description 7
- 229910052779 Neodymium Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052788 barium Inorganic materials 0.000 description 6
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- 238000001552 radio frequency sputter deposition Methods 0.000 description 6
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- 229910052726 zirconium Inorganic materials 0.000 description 6
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
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- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910002230 La2Zr2O7 Inorganic materials 0.000 description 2
- -1 Pm Inorganic materials 0.000 description 2
- 229910004121 SrRuO Inorganic materials 0.000 description 2
- 229910034327 TiC Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G35/00—Compounds of tantalum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Inorganic Insulating Materials (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019105680 | 2019-06-05 | ||
| JP2019105680 | 2019-06-05 | ||
| PCT/JP2020/021128 WO2020246363A1 (ja) | 2019-06-05 | 2020-05-28 | 誘電体膜およびそれを用いたキャパシタならびに誘電体膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2020246363A1 JPWO2020246363A1 (https=) | 2020-12-10 |
| JP7226747B2 true JP7226747B2 (ja) | 2023-02-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021524802A Active JP7226747B2 (ja) | 2019-06-05 | 2020-05-28 | 誘電体膜およびそれを用いたキャパシタならびに誘電体膜の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7226747B2 (https=) |
| WO (1) | WO2020246363A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026023204A1 (ja) * | 2024-07-26 | 2026-01-29 | Ｊｘ金属株式会社 | 酸化物スパッタリングターゲット及びその製造方法並びに酸化物粉末 |
| CN120136549B (zh) * | 2025-05-16 | 2025-07-18 | 苏州工学院 | 一种低损耗稀土烧绿石基微波介质陶瓷材料及其制备方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003502837A (ja) | 1999-06-10 | 2003-01-21 | シメトリックス・コーポレーション | 高誘電率用途向け金属酸化物薄膜 |
| JP2003209179A (ja) | 2002-01-15 | 2003-07-25 | Fujitsu Ltd | 容量素子及びその製造方法 |
| JP2005216951A (ja) | 2004-01-27 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 層状反強誘電体、キャパシタとメモリ及びそれらの製造方法 |
| CN101752410A (zh) | 2008-12-15 | 2010-06-23 | 北京有色金属研究总院 | 一种用于高介电常数栅介质的外延薄膜及其制备方法 |
| JP2011210783A (ja) | 2010-03-29 | 2011-10-20 | Kyocera Corp | 積層セラミックコンデンサ |
-
2020
- 2020-05-28 JP JP2021524802A patent/JP7226747B2/ja active Active
- 2020-05-28 WO PCT/JP2020/021128 patent/WO2020246363A1/ja not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003502837A (ja) | 1999-06-10 | 2003-01-21 | シメトリックス・コーポレーション | 高誘電率用途向け金属酸化物薄膜 |
| JP2003209179A (ja) | 2002-01-15 | 2003-07-25 | Fujitsu Ltd | 容量素子及びその製造方法 |
| JP2005216951A (ja) | 2004-01-27 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 層状反強誘電体、キャパシタとメモリ及びそれらの製造方法 |
| CN101752410A (zh) | 2008-12-15 | 2010-06-23 | 北京有色金属研究总院 | 一种用于高介电常数栅介质的外延薄膜及其制备方法 |
| JP2011210783A (ja) | 2010-03-29 | 2011-10-20 | Kyocera Corp | 積層セラミックコンデンサ |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020246363A1 (ja) | 2020-12-10 |
| JPWO2020246363A1 (https=) | 2020-12-10 |
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