JPWO2020246363A1 - - Google Patents

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Publication number
JPWO2020246363A1
JPWO2020246363A1 JP2021524802A JP2021524802A JPWO2020246363A1 JP WO2020246363 A1 JPWO2020246363 A1 JP WO2020246363A1 JP 2021524802 A JP2021524802 A JP 2021524802A JP 2021524802 A JP2021524802 A JP 2021524802A JP WO2020246363 A1 JPWO2020246363 A1 JP WO2020246363A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021524802A
Other languages
Japanese (ja)
Other versions
JP7226747B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020246363A1 publication Critical patent/JPWO2020246363A1/ja
Application granted granted Critical
Publication of JP7226747B2 publication Critical patent/JP7226747B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G35/00—Compounds of tantalum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
JP2021524802A 2019-06-05 2020-05-28 誘電体膜およびそれを用いたキャパシタならびに誘電体膜の製造方法 Active JP7226747B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019105680 2019-06-05
JP2019105680 2019-06-05
PCT/JP2020/021128 WO2020246363A1 (ja) 2019-06-05 2020-05-28 誘電体膜およびそれを用いたキャパシタならびに誘電体膜の製造方法

Publications (2)

Publication Number Publication Date
JPWO2020246363A1 true JPWO2020246363A1 (https=) 2020-12-10
JP7226747B2 JP7226747B2 (ja) 2023-02-21

Family

ID=73652521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021524802A Active JP7226747B2 (ja) 2019-06-05 2020-05-28 誘電体膜およびそれを用いたキャパシタならびに誘電体膜の製造方法

Country Status (2)

Country Link
JP (1) JP7226747B2 (https=)
WO (1) WO2020246363A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026023204A1 (ja) * 2024-07-26 2026-01-29 Ｊｘ金属株式会社 酸化物スパッタリングターゲット及びその製造方法並びに酸化物粉末
CN120136549B (zh) * 2025-05-16 2025-07-18 苏州工学院 一种低损耗稀土烧绿石基微波介质陶瓷材料及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003502837A (ja) * 1999-06-10 2003-01-21 シメトリックス・コーポレーション 高誘電率用途向け金属酸化物薄膜
JP2003209179A (ja) * 2002-01-15 2003-07-25 Fujitsu Ltd 容量素子及びその製造方法
JP2005216951A (ja) * 2004-01-27 2005-08-11 Matsushita Electric Ind Co Ltd 層状反強誘電体、キャパシタとメモリ及びそれらの製造方法
CN101752410A (zh) * 2008-12-15 2010-06-23 北京有色金属研究总院 一种用于高介电常数栅介质的外延薄膜及其制备方法
JP2011210783A (ja) * 2010-03-29 2011-10-20 Kyocera Corp 積層セラミックコンデンサ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003502837A (ja) * 1999-06-10 2003-01-21 シメトリックス・コーポレーション 高誘電率用途向け金属酸化物薄膜
JP2003209179A (ja) * 2002-01-15 2003-07-25 Fujitsu Ltd 容量素子及びその製造方法
JP2005216951A (ja) * 2004-01-27 2005-08-11 Matsushita Electric Ind Co Ltd 層状反強誘電体、キャパシタとメモリ及びそれらの製造方法
CN101752410A (zh) * 2008-12-15 2010-06-23 北京有色金属研究总院 一种用于高介电常数栅介质的外延薄膜及其制备方法
JP2011210783A (ja) * 2010-03-29 2011-10-20 Kyocera Corp 積層セラミックコンデンサ

Also Published As

Publication number Publication date
WO2020246363A1 (ja) 2020-12-10
JP7226747B2 (ja) 2023-02-21

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