JP7208260B2 - 基板処理装置及び基板処理方法 - Google Patents
基板処理装置及び基板処理方法 Download PDFInfo
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Description
60 改質装置
100 チャック
110 レーザヘッド
S 支持ウェハ
T 重合ウェハ
W 処理ウェハ
Claims (15)
- 基板を処理する基板処理装置であって、
第1の基板の表面と第2の基板の表面が接合された重合基板において前記第2の基板を保持する基板保持部と、
前記基板保持部に保持された前記第1の基板の内部に、除去対象の周縁部と中央部との境界に沿って周縁用レーザ光を照射して周縁改質層を形成する周縁改質部と、
前記周縁改質部で前記周縁改質層を形成した後、前記基板保持部に保持された前記第1の基板の内部に、面方向に沿って内部面用レーザ光を照射して少なくとも前記周縁改質層よりも径方向内側に内部面改質層を形成する内部面改質部と、
前記内部面改質部で前記内部面改質層を形成した後、前記第1の基板において前記周縁改質層を基点に前記周縁部を除去する周縁除去部と、
前記周縁除去部で前記周縁部を除去した後、前記内部面改質層を基点に前記第1の基板を分離する基板分離部と、を有する、基板処理装置。 - 前記基板分離部で前記第1の基板が分離された後、前記第2の基板に接合された前記第1の基板の裏面を研削加工する加工部を有し、
前記基板分離部は、前記基板保持部と前記加工部の間で前記重合基板を搬送する搬送部である、請求項1に記載の基板処理装置。 - 前記重合基板における前記第2の基板を保持する他の基板保持部を有し、
前記周縁除去部は、前記他の基板保持部で保持された前記第1の基板の前記周縁部を除去し、
前記基板分離部は、前記他の基板保持部で保持された前記第1の基板を分離する、請求項1に記載の基板処理装置。 - 基板を処理する基板処理装置であって、
第1の基板の表面と第2の基板の表面が接合された重合基板において前記第2の基板を保持する基板保持部と、
前記基板保持部に保持された前記第1の基板の内部に、除去対象の周縁部と中央部との境界に沿って周縁用レーザ光を照射して周縁改質層を形成する周縁改質部と、
前記周縁改質部で前記周縁改質層を形成した後、前記基板保持部に保持された前記第1の基板の内部に、面方向に沿って内部面用レーザ光を照射して少なくとも前記周縁改質層よりも径方向内側に内部面改質層を形成する内部面改質部と、
前記内部面改質部で前記内部面改質層を形成した後、前記第1の基板において前記周縁改質層を基点にした前記周縁部の除去と、前記内部面改質層を基点にした前記第1の基板の分離とを同時に行う除去分離部と、を有する、基板処理装置。 - 前記除去分離部で前記第1の基板が分離された後、前記第2の基板に接合された前記第1の基板の裏面を研削加工する加工部を有し、
前記除去分離部は、前記基板保持部と前記加工部の間で前記重合基板を搬送する搬送部である、請求項4に記載の基板処理装置。 - 前記重合基板における前記第2の基板を保持する他の基板保持部を有し、
前記除去分離部は、前記他の基板保持部で保持された前記第1の基板に対して、前記周縁部の除去と前記第1の基板の分離とを同時に行う、請求項4に記載の基板処理装置。 - 前記内部面改質部で前記内部面改質層を形成する際に、前記周縁部を保持する周縁保持部を有する、請求項1~6のいずれか一項に記載の基板処理装置。
- 前記周縁改質部は、前記周縁改質層から前記第1の基板の厚み方向に形成されるクラックを、前記第1の基板の表面まで進展させるように当該周縁改質層を形成する、請求項1~6のいずれか一項に記載の基板処理装置。
- 基板を処理する基板処理装置であって、
第1の基板の表面と第2の基板の表面が接合された重合基板において前記第2の基板を保持する基板保持部と、
前記基板保持部に保持された前記第1の基板の内部に、除去対象の周縁部と中央部との境界に沿って周縁用レーザ光を照射して周縁改質層を形成する周縁改質部と、
前記周縁改質部で前記周縁改質層を形成した後、前記基板保持部に保持された前記第1の基板の内部に、面方向に沿って内部面用レーザ光を照射して少なくとも前記周縁改質層よりも径方向内側に内部面改質層を形成する内部面改質部と、
前記周縁改質部で前記周縁改質層を形成した後であって前記内部面改質部で前記内部面改質層を形成する前に、前記第1の基板において前記周縁改質層を基点に前記周縁部を除去する周縁除去部と、
前記内部面改質部で前記内部面改質層を形成した後、前記内部面改質層を基点に前記第1の基板を分離する基板分離部と、を有する、基板処理装置。 - 前記周縁除去部は、前記基板保持部に前記重合基板を搬送する搬送部である、請求項9に記載の基板処理装置。
- 前記周縁改質部と前記内部面改質部は、共通のレーザヘッドを有し、
前記レーザヘッドは、前記周縁用レーザ光と前記内部面用レーザ光を切り換える、請求項1~10のいずれか一項に記載の基板処理装置。 - 前記レーザヘッドを複数有する、請求項11に記載の基板処理装置。
- 基板を処理する基板処理方法であって、
第1の基板と第2の基板が接合された重合基板において前記第2の基板を基板保持部で保持することと、
周縁改質部から前記基板保持部に保持された前記第1の基板の内部に、除去対象の周縁部と中央部との境界に沿って周縁用レーザ光を照射して周縁改質層を形成することと、
前記周縁改質部で前記周縁改質層を形成した後、内部面改質部から前記基板保持部に保持された前記第1の基板の内部に、面方向に沿って内部面用レーザ光を照射して少なくとも前記周縁改質層よりも径方向内側に内部面改質層を形成することと、
前記内部面改質部で前記内部面改質層を形成した後、周縁除去部により前記第1の基板において前記周縁改質層を基点に前記周縁部を除去することと、
前記周縁除去部で前記周縁部を除去した後、基板分離部により前記内部面改質層を基点に前記第1の基板を分離することと、を有する、基板処理方法。 - 基板を処理する基板処理方法であって、
第1の基板と第2の基板が接合された重合基板において前記第2の基板を基板保持部で保持することと、
周縁改質部から前記基板保持部に保持された前記第1の基板の内部に、除去対象の周縁部と中央部との境界に沿って周縁用レーザ光を照射して周縁改質層を形成することと、
前記周縁改質部で前記周縁改質層を形成した後、内部面改質部から前記基板保持部に保持された前記第1の基板の内部に、面方向に沿って内部面用レーザ光を照射して少なくとも前記周縁改質層よりも径方向内側に内部面改質層を形成することと、を有し、
前記内部面改質部で前記内部面改質層を形成した後、除去分離部を用いて、前記第1の基板において前記周縁改質層を基点にした前記周縁部の除去と、前記内部面改質層を基点にした前記第1の基板の分離とを同時に行う、基板処理方法。 - 基板を処理する基板処理方法であって、
第1の基板と第2の基板が接合された重合基板において前記第2の基板を基板保持部で保持することと、
周縁改質部から前記基板保持部に保持された前記第1の基板の内部に、除去対象の周縁部と中央部との境界に沿って周縁用レーザ光を照射して周縁改質層を形成することと、
前記周縁改質部で前記周縁改質層を形成した後、内部面改質部から前記基板保持部に保持された前記第1の基板の内部に、面方向に沿って内部面用レーザ光を照射して少なくとも前記周縁改質層よりも径方向内側に内部面改質層を形成することと、
前記周縁改質部で前記周縁改質層を形成した後であって前記内部面改質部で前記内部面改質層を形成する前に、周縁除去部により前記第1の基板において前記周縁改質層を基点に前記周縁部を除去することと、
前記内部面改質部で前記内部面改質層を形成した後、基板分離部により前記内部面改質層を基点に前記第1の基板を分離することと、を有する、基板処理方法。
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004111606A (ja) | 2002-09-18 | 2004-04-08 | Tokyo Seimitsu Co Ltd | ウェーハの加工方法 |
JP2006108532A (ja) | 2004-10-08 | 2006-04-20 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
JP2012028646A (ja) | 2010-07-26 | 2012-02-09 | Hamamatsu Photonics Kk | チップの製造方法 |
JP2012109341A (ja) | 2010-11-16 | 2012-06-07 | Shibuya Kogyo Co Ltd | 半導体材料の切断方法と切断装置 |
JP2016043401A (ja) | 2014-08-26 | 2016-04-04 | 信越ポリマー株式会社 | 基板加工方法及び基板 |
JP2017092314A (ja) | 2015-11-12 | 2017-05-25 | 株式会社ディスコ | SiC基板の分離方法 |
JP2017195244A (ja) | 2016-04-19 | 2017-10-26 | 株式会社ディスコ | SiCウエーハの加工方法 |
JP2017204626A (ja) | 2016-05-06 | 2017-11-16 | 国立大学法人埼玉大学 | 基板加工方法および基板加工装置 |
JP2020038870A (ja) | 2018-09-03 | 2020-03-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020088187A (ja) | 2018-11-27 | 2020-06-04 | 株式会社ディスコ | ウェーハの加工方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3239884B2 (ja) | 1989-12-12 | 2001-12-17 | ソニー株式会社 | 半導体基板の製造方法 |
JPH09216152A (ja) | 1996-02-09 | 1997-08-19 | Okamoto Kosaku Kikai Seisakusho:Kk | 端面研削装置及び端面研削方法 |
US6420245B1 (en) * | 1999-06-08 | 2002-07-16 | Kulicke & Soffa Investments, Inc. | Method for singulating semiconductor wafers |
JP2002353423A (ja) * | 2001-05-25 | 2002-12-06 | Canon Inc | 板部材の分離装置及び処理方法 |
JP4263425B2 (ja) | 2002-05-01 | 2009-05-13 | 高園産業株式会社 | 薬剤分配装置 |
US8835802B2 (en) * | 2006-01-24 | 2014-09-16 | Stephen C. Baer | Cleaving wafers from silicon crystals |
JP2012069736A (ja) | 2010-09-24 | 2012-04-05 | Elpida Memory Inc | 半導体装置の製造方法 |
JP5959193B2 (ja) | 2011-12-19 | 2016-08-02 | 株式会社東京精密 | ウェーハ研削方法およびウェーハ研削装置 |
AU2013222069A1 (en) * | 2012-02-26 | 2014-10-16 | Solexel, Inc. | Systems and methods for laser splitting and device layer transfer |
JP2015511572A (ja) * | 2012-02-28 | 2015-04-20 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | 強化ガラスの分離のための方法及び装置並びにこれにより生成された製品 |
JP5784658B2 (ja) | 2013-02-28 | 2015-09-24 | 株式会社東芝 | 半導体装置の製造方法及び製造装置 |
KR101803790B1 (ko) * | 2013-04-18 | 2017-12-04 | 한화테크윈 주식회사 | 웨이퍼의 시닝 방법 및 장치 |
JP6062315B2 (ja) * | 2013-04-24 | 2017-01-18 | 株式会社ディスコ | ウエーハの加工方法 |
KR102250130B1 (ko) * | 2013-11-20 | 2021-05-11 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
JP6371579B2 (ja) | 2014-05-12 | 2018-08-08 | 株式会社ディスコ | チャックテーブル |
JP6305853B2 (ja) * | 2014-07-08 | 2018-04-04 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017204555A (ja) | 2016-05-11 | 2017-11-16 | 株式会社ディスコ | 切削方法 |
JP6938160B2 (ja) | 2017-01-17 | 2021-09-22 | 株式会社ディスコ | 被加工物の加工方法 |
JP6520964B2 (ja) * | 2017-01-26 | 2019-05-29 | 日亜化学工業株式会社 | 発光素子の製造方法 |
JP6888812B2 (ja) * | 2017-04-21 | 2021-06-16 | 淀川メデック株式会社 | フレキシブルデバイスの製造装置及び製造方法 |
JP6946153B2 (ja) * | 2017-11-16 | 2021-10-06 | 株式会社ディスコ | ウエーハの生成方法およびウエーハ生成装置 |
-
2019
- 2019-12-09 CN CN202310289536.9A patent/CN116213967A/zh active Pending
- 2019-12-09 CN CN201980082692.XA patent/CN113195153B/zh active Active
- 2019-12-09 KR KR1020247003930A patent/KR20240017994A/ko not_active Application Discontinuation
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- 2019-12-09 KR KR1020217021664A patent/KR102637161B1/ko active Application Filing
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- 2019-12-11 TW TW108145312A patent/TWI824080B/zh active
-
2023
- 2023-01-05 JP JP2023000669A patent/JP7556064B2/ja active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004111606A (ja) | 2002-09-18 | 2004-04-08 | Tokyo Seimitsu Co Ltd | ウェーハの加工方法 |
JP2006108532A (ja) | 2004-10-08 | 2006-04-20 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
JP2012028646A (ja) | 2010-07-26 | 2012-02-09 | Hamamatsu Photonics Kk | チップの製造方法 |
JP2012109341A (ja) | 2010-11-16 | 2012-06-07 | Shibuya Kogyo Co Ltd | 半導体材料の切断方法と切断装置 |
JP2016043401A (ja) | 2014-08-26 | 2016-04-04 | 信越ポリマー株式会社 | 基板加工方法及び基板 |
JP2017092314A (ja) | 2015-11-12 | 2017-05-25 | 株式会社ディスコ | SiC基板の分離方法 |
JP2017195244A (ja) | 2016-04-19 | 2017-10-26 | 株式会社ディスコ | SiCウエーハの加工方法 |
JP2017204626A (ja) | 2016-05-06 | 2017-11-16 | 国立大学法人埼玉大学 | 基板加工方法および基板加工装置 |
JP2020038870A (ja) | 2018-09-03 | 2020-03-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020088187A (ja) | 2018-11-27 | 2020-06-04 | 株式会社ディスコ | ウェーハの加工方法 |
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