JP7200898B2 - ワークの両面研磨方法 - Google Patents

ワークの両面研磨方法 Download PDF

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Publication number
JP7200898B2
JP7200898B2 JP2019177790A JP2019177790A JP7200898B2 JP 7200898 B2 JP7200898 B2 JP 7200898B2 JP 2019177790 A JP2019177790 A JP 2019177790A JP 2019177790 A JP2019177790 A JP 2019177790A JP 7200898 B2 JP7200898 B2 JP 7200898B2
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Japan
Prior art keywords
workpiece
polishing
amount
holding hole
double
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Active
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JP2019177790A
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English (en)
Japanese (ja)
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JP2021053726A (ja
Inventor
英輔 野中
幸二郎 平岩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
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Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2019177790A priority Critical patent/JP7200898B2/ja
Priority to DE112020004627.3T priority patent/DE112020004627T5/de
Priority to CN202080067215.9A priority patent/CN114401823A/zh
Priority to KR1020227009330A priority patent/KR102674947B1/ko
Priority to TW109127489A priority patent/TWI740606B/zh
Priority to PCT/JP2020/030798 priority patent/WO2021059790A1/ja
Publication of JP2021053726A publication Critical patent/JP2021053726A/ja
Application granted granted Critical
Publication of JP7200898B2 publication Critical patent/JP7200898B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2019177790A 2019-09-27 2019-09-27 ワークの両面研磨方法 Active JP7200898B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2019177790A JP7200898B2 (ja) 2019-09-27 2019-09-27 ワークの両面研磨方法
DE112020004627.3T DE112020004627T5 (de) 2019-09-27 2020-08-13 Verfahren zum doppelseitigen polieren eines werkstücks
CN202080067215.9A CN114401823A (zh) 2019-09-27 2020-08-13 工件的双面研磨方法
KR1020227009330A KR102674947B1 (ko) 2019-09-27 2020-08-13 워크의 양면 연마 방법
TW109127489A TWI740606B (zh) 2019-09-27 2020-08-13 工件的兩面研磨方法
PCT/JP2020/030798 WO2021059790A1 (ja) 2019-09-27 2020-08-13 ワークの両面研磨方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019177790A JP7200898B2 (ja) 2019-09-27 2019-09-27 ワークの両面研磨方法

Publications (2)

Publication Number Publication Date
JP2021053726A JP2021053726A (ja) 2021-04-08
JP7200898B2 true JP7200898B2 (ja) 2023-01-10

Family

ID=75166050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019177790A Active JP7200898B2 (ja) 2019-09-27 2019-09-27 ワークの両面研磨方法

Country Status (6)

Country Link
JP (1) JP7200898B2 (ko)
KR (1) KR102674947B1 (ko)
CN (1) CN114401823A (ko)
DE (1) DE112020004627T5 (ko)
TW (1) TWI740606B (ko)
WO (1) WO2021059790A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7235071B2 (ja) * 2021-06-11 2023-03-08 株式会社Sumco ワークの両面研磨方法及びワークの両面研磨装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002331453A (ja) 2001-05-08 2002-11-19 Shin Etsu Handotai Co Ltd ウェーハの研磨方法及びウェーハの研磨装置
JP2006156653A (ja) 2004-11-29 2006-06-15 Toshiba Ceramics Co Ltd ウェーハ保持体
JP2010253579A (ja) 2009-04-22 2010-11-11 Sumco Corp ウェーハの研磨方法および研磨装置
JP2014050913A (ja) 2012-09-06 2014-03-20 Shin Etsu Handotai Co Ltd 両面研磨方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4280397B2 (ja) * 1999-10-21 2009-06-17 スピードファム株式会社 ワークの研磨方法
JP2002326156A (ja) * 2001-04-27 2002-11-12 Nippon Sheet Glass Co Ltd ガラス基板研磨用キャリア及びガラス基板研磨装置
JP2003071703A (ja) * 2001-09-05 2003-03-12 Seiko Instruments Inc 多段式微小孔加工方法および装置
JP2005150216A (ja) * 2003-11-12 2005-06-09 Hitachi Cable Ltd 半導体ウェハの研磨装置
JP2006198751A (ja) * 2005-01-24 2006-08-03 Showa Denko Kk 磁気ディスク用サブストレート基板の製造方法及び研磨装置
KR100746373B1 (ko) * 2005-12-13 2007-08-03 주식회사 실트론 양면 연마장치의 캐리어 플레이트 구조
JP4904960B2 (ja) * 2006-07-18 2012-03-28 信越半導体株式会社 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法
JP4605233B2 (ja) * 2008-02-27 2011-01-05 信越半導体株式会社 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法
JP5212041B2 (ja) * 2008-11-19 2013-06-19 信越半導体株式会社 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法
DE102011082777A1 (de) * 2011-09-15 2012-02-09 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
TWI465317B (zh) 2012-06-25 2014-12-21 Sumco Corp 工作件的硏磨方法及工作件的硏磨裝置
JP2014188668A (ja) * 2013-03-28 2014-10-06 Hoya Corp ガラス基板の製造方法
WO2017073265A1 (ja) * 2015-10-30 2017-05-04 株式会社Sumco 半導体ウェーハの両面研磨方法及びその両面研磨装置
JP6403100B2 (ja) * 2016-01-25 2018-10-10 信越半導体株式会社 エピタキシャル成長装置及び保持部材
JP6579056B2 (ja) * 2016-07-29 2019-09-25 株式会社Sumco ウェーハの両面研磨方法
JP6635003B2 (ja) * 2016-11-02 2020-01-22 株式会社Sumco 半導体ウェーハの両面研磨方法
JP6844530B2 (ja) * 2017-12-28 2021-03-17 株式会社Sumco ワークの両面研磨装置および両面研磨方法
JP7046358B2 (ja) * 2018-04-17 2022-04-04 スピードファム株式会社 研磨装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002331453A (ja) 2001-05-08 2002-11-19 Shin Etsu Handotai Co Ltd ウェーハの研磨方法及びウェーハの研磨装置
JP2006156653A (ja) 2004-11-29 2006-06-15 Toshiba Ceramics Co Ltd ウェーハ保持体
JP2010253579A (ja) 2009-04-22 2010-11-11 Sumco Corp ウェーハの研磨方法および研磨装置
JP2014050913A (ja) 2012-09-06 2014-03-20 Shin Etsu Handotai Co Ltd 両面研磨方法

Also Published As

Publication number Publication date
JP2021053726A (ja) 2021-04-08
DE112020004627T5 (de) 2022-09-01
TW202112494A (zh) 2021-04-01
KR102674947B1 (ko) 2024-06-12
KR20220047645A (ko) 2022-04-18
WO2021059790A1 (ja) 2021-04-01
TWI740606B (zh) 2021-09-21
CN114401823A (zh) 2022-04-26

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