JP7178932B2 - 露光装置、および物品製造方法 - Google Patents

露光装置、および物品製造方法 Download PDF

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Publication number
JP7178932B2
JP7178932B2 JP2019045138A JP2019045138A JP7178932B2 JP 7178932 B2 JP7178932 B2 JP 7178932B2 JP 2019045138 A JP2019045138 A JP 2019045138A JP 2019045138 A JP2019045138 A JP 2019045138A JP 7178932 B2 JP7178932 B2 JP 7178932B2
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Japan
Prior art keywords
optical element
exposure apparatus
substrate
axis
exposure
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JP2019045138A
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English (en)
Japanese (ja)
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JP2020148865A5 (enExample
JP2020148865A (ja
Inventor
晃司 三上
篤 繁延
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2019045138A priority Critical patent/JP7178932B2/ja
Priority to EP20159086.6A priority patent/EP3709083A1/en
Priority to TW109105960A priority patent/TWI772756B/zh
Priority to US16/809,097 priority patent/US11061337B2/en
Priority to KR1020200029382A priority patent/KR102678914B1/ko
Priority to SG10202002243WA priority patent/SG10202002243WA/en
Priority to CN202010179074.1A priority patent/CN111694225B/zh
Publication of JP2020148865A publication Critical patent/JP2020148865A/ja
Publication of JP2020148865A5 publication Critical patent/JP2020148865A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Glass Compositions (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
JP2019045138A 2019-03-12 2019-03-12 露光装置、および物品製造方法 Active JP7178932B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2019045138A JP7178932B2 (ja) 2019-03-12 2019-03-12 露光装置、および物品製造方法
EP20159086.6A EP3709083A1 (en) 2019-03-12 2020-02-24 Exposure apparatus and article manufacturing method
TW109105960A TWI772756B (zh) 2019-03-12 2020-02-25 曝光裝置及物品製造方法
US16/809,097 US11061337B2 (en) 2019-03-12 2020-03-04 Exposure apparatus and article manufacturing method
KR1020200029382A KR102678914B1 (ko) 2019-03-12 2020-03-10 노광 장치 및 물품 제조 방법
SG10202002243WA SG10202002243WA (en) 2019-03-12 2020-03-11 Exposure apparatus and article manufacturing method
CN202010179074.1A CN111694225B (zh) 2019-03-12 2020-03-12 曝光装置和物品制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019045138A JP7178932B2 (ja) 2019-03-12 2019-03-12 露光装置、および物品製造方法

Publications (3)

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JP2020148865A JP2020148865A (ja) 2020-09-17
JP2020148865A5 JP2020148865A5 (enExample) 2022-03-17
JP7178932B2 true JP7178932B2 (ja) 2022-11-28

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JP2019045138A Active JP7178932B2 (ja) 2019-03-12 2019-03-12 露光装置、および物品製造方法

Country Status (7)

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US (1) US11061337B2 (enExample)
EP (1) EP3709083A1 (enExample)
JP (1) JP7178932B2 (enExample)
KR (1) KR102678914B1 (enExample)
CN (1) CN111694225B (enExample)
SG (1) SG10202002243WA (enExample)
TW (1) TWI772756B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240266186A1 (en) * 2023-02-08 2024-08-08 Applied Materials, Inc. Stress management for precise substrate -to- substrate bonding

Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2008028388A (ja) 2006-07-18 2008-02-07 Asml Netherlands Bv リソグラフィック装置、収差補正デバイス、およびデバイス製造方法
JP2010266687A (ja) 2009-05-14 2010-11-25 Nikon Corp 露光方法、露光装置、及びデバイス製造方法
JP2014120682A (ja) 2012-12-18 2014-06-30 Canon Inc 露光装置、露光方法及びデバイス製造方法
JP2014168031A (ja) 2013-01-30 2014-09-11 Canon Inc リソグラフィ装置、リソグラフィ方法及び物品製造方法

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JP3064432B2 (ja) 1990-12-26 2000-07-12 株式会社ニコン 投影露光装置、投影露光方法、及び回路製造方法
JPH06349700A (ja) * 1993-06-10 1994-12-22 Nikon Corp 投影露光装置
JPH0982601A (ja) * 1995-09-12 1997-03-28 Nikon Corp 投影露光装置
JPH10142555A (ja) * 1996-11-06 1998-05-29 Nikon Corp 投影露光装置
EP1037266A4 (en) * 1997-10-07 2002-09-11 Nikon Corp PROJECTION EXPOSURE METHOD AND DEVICE
JP3179406B2 (ja) * 1998-02-26 2001-06-25 日本電気ファクトリエンジニアリング株式会社 露光方法およびその装置
JP3031375B2 (ja) 1998-04-23 2000-04-10 キヤノン株式会社 レンズ鏡筒及びそれを用いた投影露光装置
JP3459773B2 (ja) * 1998-06-24 2003-10-27 キヤノン株式会社 投影露光装置及びデバイスの製造方法
JP2002175964A (ja) * 2000-12-06 2002-06-21 Nikon Corp 観察装置およびその製造方法、露光装置、並びにマイクロデバイスの製造方法
JP3358192B2 (ja) * 2001-05-31 2002-12-16 株式会社ニコン 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法
US8009271B2 (en) * 2004-12-16 2011-08-30 Nikon Corporation Projection optical system, exposure apparatus, exposure system, and exposure method
JP5067162B2 (ja) * 2005-11-10 2012-11-07 株式会社ニコン 照明光学装置、露光装置、および露光方法
JP5406437B2 (ja) * 2007-06-22 2014-02-05 キヤノン株式会社 露光装置及びデバイス製造方法
DE102008001892A1 (de) * 2008-05-21 2009-11-26 Carl Zeiss Smt Ag Optisches System für die Mikrolithographie
JP2010102130A (ja) * 2008-10-23 2010-05-06 Canon Inc 露光装置
EP2219077A1 (en) * 2009-02-12 2010-08-18 Carl Zeiss SMT AG Projection exposure method, projection exposure system and projection objective
JP2015204312A (ja) * 2014-04-10 2015-11-16 キヤノン株式会社 投影光学系、露光装置、及び物品の製造方法
DE102015218329A1 (de) * 2015-09-24 2017-03-30 Carl Zeiss Smt Gmbh Optische Korrekturanordnung, Projektionsobjektiv mit einer solchen optischen Korrekturanordnung sowie mikrolithografische Apparatur mit einem solchen Projektionsobjektiv

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028388A (ja) 2006-07-18 2008-02-07 Asml Netherlands Bv リソグラフィック装置、収差補正デバイス、およびデバイス製造方法
JP2010266687A (ja) 2009-05-14 2010-11-25 Nikon Corp 露光方法、露光装置、及びデバイス製造方法
JP2014120682A (ja) 2012-12-18 2014-06-30 Canon Inc 露光装置、露光方法及びデバイス製造方法
JP2014168031A (ja) 2013-01-30 2014-09-11 Canon Inc リソグラフィ装置、リソグラフィ方法及び物品製造方法

Also Published As

Publication number Publication date
TW202036176A (zh) 2020-10-01
JP2020148865A (ja) 2020-09-17
CN111694225A (zh) 2020-09-22
KR102678914B1 (ko) 2024-06-28
CN111694225B (zh) 2023-11-21
KR20200109261A (ko) 2020-09-22
SG10202002243WA (en) 2020-10-29
US20200292945A1 (en) 2020-09-17
EP3709083A1 (en) 2020-09-16
US11061337B2 (en) 2021-07-13
TWI772756B (zh) 2022-08-01

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