JP7170620B2 - 半導体装置および放熱フィンの製造方法 - Google Patents
半導体装置および放熱フィンの製造方法 Download PDFInfo
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- JP7170620B2 JP7170620B2 JP2019213339A JP2019213339A JP7170620B2 JP 7170620 B2 JP7170620 B2 JP 7170620B2 JP 2019213339 A JP2019213339 A JP 2019213339A JP 2019213339 A JP2019213339 A JP 2019213339A JP 7170620 B2 JP7170620 B2 JP 7170620B2
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- semiconductor package
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- 239000004065 semiconductor Substances 0.000 title claims description 86
- 230000005855 radiation Effects 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 239000000696 magnetic material Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 4
- 229920005992 thermoplastic resin Polymers 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 239000000919 ceramic Substances 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000000155 melt Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000005219 brazing Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
本発明の実施の形態1について、図面を用いて以下に説明する。図1は、実施の形態1に係る半導体装置100の断面図である。
次に、実施の形態2に係る半導体装置100Aについて説明する。図8は、実施の形態2に係る半導体装置100Aの断面図である。なお、実施の形態2において、実施の形態1で説明したものと同一の構成要素については同一符号を付して説明は省略する。
Claims (5)
- 半導体パッケージと、
前記半導体パッケージの上面のうち外周部よりも内側に位置する絶縁基板と、
前記半導体パッケージの前記上面に配置された放熱フィンと、
前記半導体パッケージの前記上面の前記外周部に位置し、前記半導体パッケージと一体に形成された磁性体およびボンド磁石の一方からなる第1の固定部と、
前記放熱フィンの下面における前記第1の固定部に対向する箇所に位置し、前記放熱フィンと一体に形成された前記磁性体および前記ボンド磁石の他方からなる第2の固定部と、を備え、
前記第1の固定部と前記第2の固定部との間に発生する磁力により、前記半導体パッケージと前記放熱フィンは吸着する、半導体装置。 - 前記第1の固定部は前記磁性体からなり、前記第2の固定部は前記ボンド磁石からなる、請求項1に記載の半導体装置。
- 前記放熱フィンは、前記半導体パッケージに対する前記放熱フィンの位置を規制する一対のガイドレールを備え、
一対の前記ガイドレールと前記半導体パッケージにおける横方向の外端との間に予め定められた隙間を有する、請求項1または請求項2に記載の半導体装置。 - 前記放熱フィンにおける前記ボンド磁石の周囲に配置されたヨークをさらに備えた、請求項2に記載の半導体装置。
- 請求項2に記載の半導体装置が備える前記放熱フィンを製造する方法であって、
(a)前記放熱フィンの本体部に対して押出加工を実施し、前記ボンド磁石が形成される凹部を形成する工程と、
(b)前記凹部に磁石片と熱可塑性樹脂を含む混錬材を溶融射出する工程と、
(c)前記凹部に溶融射出された前記混錬材を冷却し硬化させることで前記本体部に前記ボンド磁石を一体形成する工程と、
(d)前記本体部に一体形成された前記ボンド磁石を着磁する工程と、
を備えた、放熱フィンの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019213339A JP7170620B2 (ja) | 2019-11-26 | 2019-11-26 | 半導体装置および放熱フィンの製造方法 |
US17/002,946 US11557527B2 (en) | 2019-11-26 | 2020-08-26 | Semiconductor device and method of manufacturing radiation fin |
DE102020127682.6A DE102020127682A1 (de) | 2019-11-26 | 2020-10-21 | Halbleitervorrichtung und Verfahren zur Herstellung einer Abstrahllamelle |
CN202011307555.2A CN112951779B (zh) | 2019-11-26 | 2020-11-20 | 半导体装置以及散热鳍片的制造方法 |
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JP2019213339A JP7170620B2 (ja) | 2019-11-26 | 2019-11-26 | 半導体装置および放熱フィンの製造方法 |
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JP2021086882A JP2021086882A (ja) | 2021-06-03 |
JP7170620B2 true JP7170620B2 (ja) | 2022-11-14 |
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US (1) | US11557527B2 (ja) |
JP (1) | JP7170620B2 (ja) |
CN (1) | CN112951779B (ja) |
DE (1) | DE102020127682A1 (ja) |
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CN116313853A (zh) * | 2023-02-14 | 2023-06-23 | 纳宇半导体材料(宁波)有限责任公司 | 用于芯片粘结和封装互连的防氧化治具及封装互连的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009117647A (ja) | 2007-11-07 | 2009-05-28 | Nec Electronics Corp | 半導体装置およびその製造方法 |
US20120014068A1 (en) | 2010-07-15 | 2012-01-19 | Fujitsu Limited | Electronic device |
JP2019040971A (ja) | 2017-08-24 | 2019-03-14 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (12)
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JPS60167344U (ja) * | 1984-04-16 | 1985-11-06 | ティーオーエー株式会社 | トランジスタの取付構造 |
JPH0494154A (ja) | 1990-08-10 | 1992-03-26 | Koufu Nippon Denki Kk | ヒートシンクの取付構造 |
JPH0714952A (ja) * | 1993-06-25 | 1995-01-17 | Hitachi Ltd | 半導体装置 |
JPH09283675A (ja) * | 1996-04-10 | 1997-10-31 | Oki Electric Ind Co Ltd | 放熱フィン取付構造 |
US20080273308A1 (en) * | 2007-05-01 | 2008-11-06 | Kells Trevor A | Magnetically coupled cooling block |
TW201221041A (en) * | 2010-11-11 | 2012-05-16 | Hon Hai Prec Ind Co Ltd | Heat dissipation apparatus assembly |
JP2013070026A (ja) | 2011-09-08 | 2013-04-18 | Rohm Co Ltd | 半導体装置、半導体装置の製造方法、半導体装置の実装構造、およびパワー用半導体装置 |
CN104067388B (zh) * | 2012-03-22 | 2017-02-15 | 富士电机株式会社 | 带散热鳍片的半导体模块 |
TW201426263A (zh) * | 2012-12-26 | 2014-07-01 | Hon Hai Prec Ind Co Ltd | 導熱膏保護罩 |
TWM504269U (zh) * | 2014-11-19 | 2015-07-01 | Giga Byte Tech Co Ltd | 板件固定結構 |
CN110024119B (zh) * | 2016-11-24 | 2023-12-01 | 三菱电机株式会社 | 半导体装置及其制造方法 |
US11145568B2 (en) * | 2018-12-10 | 2021-10-12 | Intel Corporation | Magnetically affixed heat spreader |
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- 2019-11-26 JP JP2019213339A patent/JP7170620B2/ja active Active
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- 2020-08-26 US US17/002,946 patent/US11557527B2/en active Active
- 2020-10-21 DE DE102020127682.6A patent/DE102020127682A1/de active Pending
- 2020-11-20 CN CN202011307555.2A patent/CN112951779B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009117647A (ja) | 2007-11-07 | 2009-05-28 | Nec Electronics Corp | 半導体装置およびその製造方法 |
US20120014068A1 (en) | 2010-07-15 | 2012-01-19 | Fujitsu Limited | Electronic device |
JP2012104796A (ja) | 2010-07-15 | 2012-05-31 | Fujitsu Ltd | 電子機器 |
JP2019040971A (ja) | 2017-08-24 | 2019-03-14 | 富士電機株式会社 | 半導体装置 |
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US20210159145A1 (en) | 2021-05-27 |
DE102020127682A1 (de) | 2021-05-27 |
JP2021086882A (ja) | 2021-06-03 |
US11557527B2 (en) | 2023-01-17 |
CN112951779B (zh) | 2024-08-13 |
CN112951779A (zh) | 2021-06-11 |
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