JP7165059B2 - コントラスト及び輝度が高められた画素を有する光電子デバイス - Google Patents
コントラスト及び輝度が高められた画素を有する光電子デバイス Download PDFInfo
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- JP7165059B2 JP7165059B2 JP2018568196A JP2018568196A JP7165059B2 JP 7165059 B2 JP7165059 B2 JP 7165059B2 JP 2018568196 A JP2018568196 A JP 2018568196A JP 2018568196 A JP2018568196 A JP 2018568196A JP 7165059 B2 JP7165059 B2 JP 7165059B2
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- Prior art keywords
- light emitting
- layer
- optoelectronic device
- protective layer
- emitting diode
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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Description
光電子デバイスの発光表面領域の光強度と、観察方向に垂直に投影されるこの表面の面積との比率として定められる輝度は可能な限り高くあるべきである;
極白色点と極黒色点との光強度比として定められるコントラストは可能な限り高くあるべきである;及び
発光ダイオードによって生じる熱は効率的に放出されるべきである。
- 下面14及び対向する上面16を有する導電性基板又は半導体基板12であって、上面16が少なくとも発光ダイオードの組立体のレベルで好ましくは平坦である導電性基板又は半導体基板12と、
- 基板12の下面14と上面16との間に延びて、基板12を導電性部分又は半導体部分20に分割する電気絶縁性素子18と、
- 下面14に接する複数の導電性パッド22(各導電性部分又は半導体部分20が導電性パッド22の内の1つに接する)と、
- ワイヤの成長を有利にする成長パッド24であって、導電性部分又は半導体部分20の1つで上面16に夫々接し、各画素の活性面を覆う成長層と取り替えられてもよい成長パッド24と、
- 成長パッド24の1つに夫々接する複数のワイヤ26であって、成長パッド24と接する下方部分28及び下方部分28と繋がる上方部分30とを夫々有するワイヤ26と、
- 基板12の上面16、及び各ワイヤ26の下方部分28の側面に延びる絶縁層32と、
- 各ワイヤ26の上方部分30を覆う半導体層の積層体を有するシェル34と、
- 基本発光ダイオードの発光波長領域内で少なくとも部分的に透明であり、各シェル34を覆う電極を形成し、ワイヤ26間の絶縁層32に亘って延びている導電層36と、
- ワイヤ26間の電極層36を覆うが、ワイヤ26に亘って延びないかワイヤ26の側面の一部のみに亘って延びない導電層38であって、電極層36及び絶縁層32に設けられている開口部39を通って導電性部分又は半導体部分20の1つに更に接するか、又は変形例として、絶縁層32のみに設けられた開口部39を通って電極層36を介して導電性部分又は半導体部分20の1つに更に電気的に結合されている導電層38と、
- 基本発光ダイオードの発光波長で少なくとも部分的に透明であって、構造全体を覆って、特に各ワイヤ26を完全に覆い、変形例として設けられない、保護層とも称される封止層40と、
- 封止層40に延びて、各導電性部分又は半導体部分20に置かれているワイヤ26の各組立体D を囲んで、封止層40の材料とは異なる材料から形成された壁42と
を備えた光電子デバイス10、特に表示画面及び投影デバイスの実施形態を示す。
- 関連するワイヤ26の上方部分30を覆う活性層、
- 下方部分28の導電型と反対の導電型を有して活性層を覆う中間層、及び
- 中間層を覆って、電極層36で覆われている接合層
を特に含む複数の層の積層体を有してもよい。
(Y3-xR1 x)(Al5-yR2 y)O12 (1)
ここで、R1及びR2は、希土類元素、アルカリ土類元素及び遷移金属を含む元素から独立して選択され、x及びyは夫々独立して0~1.5 の範囲内であり、好ましくは0~1の範囲内である。R1及びR2は、セリウム、サマリウム、ガドリニウム、シリコン、バリウム、テルビウム、ストロンチウム、クロム、プラセオジム及びガリウムを含む群から独立して選択されることが好ましい。
反応性イオンエッチングタイプのエッチング、例えばDRIEエッチングによって開口部を形成してもよい。開口部の深さは、以下に記載する薄膜化工程の後、基板12の目標とする厚さより大きい。例として、開口部の深さは10μm~200 μmの範囲内であり、例えば約35μm又は60μmである。
絶縁層の厚さは100 nm~3,000 nmの範囲内であってもよく、例えば約200 nmであってもよい。
ポリシリコンは有利にはシリコンの熱膨張係数に近い熱膨脹係数を有するため、高温で実行される製造方法の工程中の機械的応力を減少させることができる。
成膜の後、電極をアニールする工程を行うことが多い。
絶縁層32を通した開口部39のみが設けられている場合、電極層36を形成する工程の前に開口部39を形成する工程
様々な発光体が発光ダイオードの組立体D に応じて設けられ得る場合、選択的に発光体を成膜する方法では、第1の色の発光体粒子をシリコンレジストと混合し、その後、基板全体及び発光ダイオードに亘って分散させ、フォトリソグラフィによって発光体を所望のサブ画素に接合する。この作業を、第2の発光体でサブ画素の色の数の回数、繰り返す。別の方法では、シリコーン-発光体混合物及び特定の添加剤で形成された「インク」と共にインクジェットタイプの印刷機器を使用する。マッピング及び向きに基づきサブ画素を参照して印刷することにより、発光体を必要な位置に成膜する。
樹脂層46の最小厚さはワイヤ26の高さと等しく、樹脂層46の最大厚さは例えば約60μmである。
樹脂層47の厚さは、0.02μm~2μmの範囲内であってもよく、好ましくは0.05μm~0.3 μmの範囲内であってもよい(図3A)。
層49は、例えば厚さが20nm~400 nmの範囲内であるチタン層、及び例えば厚さが100 nm~2μmの範囲内である銅層の積層体を有してもよい(図4A)。
(a)' 樹脂層50を成膜して、フォトリソグラフィエッチング工程によって壁42の所望の位置に樹脂層50に開口部51を形成する工程(図5A)
(b)' 開口部51の底部の絶縁層45の部分をエッチングする工程(図5B)
(c)' 壁42(図5C)を形成すべく、樹脂層50の開口部51に金属材料を成膜し、例えば電気化学成膜し、金属材料を金属層38と接触させる工程
(d)' 樹脂層50を除去する工程(図5D)
を連続的に更に有する。
Claims (36)
- 対向する第1の表面及び第2の表面を有する基板と、
前記第1の表面から前記第2の表面に延びて、互いに電気的に絶縁された半導体又は導電性の第1の部分を前記基板に画定する側方の電気絶縁性素子と、
前記第1の部分毎に設けられ、前記第1の表面に置かれて前記第1の部分と電気的に結合されている一群の発光ダイオードと、
少なくとも前記発光ダイオードの発光波長領域で少なくとも部分的に透明であり、前記発光ダイオードの全てを覆う導電性の電極層と、
第1の誘電体材料を含む保護層であって、少なくとも前記発光ダイオードと前記保護層内に設けられ得る発光体との発光波長領域で少なくとも部分的に透明な、封止層及び発光体層の少なくとも1つである前記保護層と、
前記保護層に少なくとも部分的に延びて、前記一群の発光ダイオードを囲むか又は前記一群の発光ダイオードと対向する第2の部分を前記保護層に画定している壁と
を備えており、
前記壁は、
前記第1の誘電体材料とは異なる少なくとも1つの第2の材料であって、空気、金属、半導体材料、金属合金、並びに、少なくとも前記発光ダイオード及び前記発光体の発光波長領域で部分的に透明な材料を有する群に含まれる前記少なくとも1つの第2の材料を含んでいるか、或いは、
少なくとも前記発光ダイオード及び前記発光体の発光波長領域で不透明な又は反射する層で覆われた少なくとも前記発光ダイオード及び前記発光体の発光波長領域で少なくとも部分的に透明な材料で形成されたコアを含んでいることを特徴とする光電子デバイス。 - 各発光ダイオードは、少なくとも1つのワイヤ状、円錐形又はテーパ状の半導体部材を有しており、前記半導体部材は、前記半導体部材の最上部及び/又は少なくとも側面の一部で前記発光ダイオードの放射光の大部分を供給することができる少なくとも1つの活性層を有するシェルで覆われていることを特徴とする請求項1に記載の光電子デバイス。
- 前記保護層は、各発光ダイオードを囲んでいることを特徴とする請求項1又は2に記載の光電子デバイス。
- 前記保護層は前記発光ダイオードを囲んでいないことを特徴とする請求項1又は2に記載の光電子デバイス。
- 前記壁は、少なくとも前記保護層の厚さ全体に亘って延びていることを特徴とする請求項1~4のいずれか1つに記載の光電子デバイス。
- 前記壁の少なくとも1つは、前記保護層の厚さより小さい厚さの固体ブロックを有していることを特徴とする請求項1~5のいずれか1つに記載の光電子デバイス。
- 前記保護層は発光体を有していることを特徴とする請求項1~6のいずれか1つに記載の光電子デバイス。
- 前記保護層は、単結晶の発光体を有していることを特徴とする請求項1~6のいずれか1つに記載の光電子デバイス。
- 少なくとも前記発光ダイオード及び前記発光体の発光波長領域で少なくとも部分的に透明な材料で形成され、前記保護層を覆い、前記基板に機械的に結合された板を更に備えていることを特徴とする請求項1~8のいずれか1つに記載の光電子デバイス。
- 前記板は、前記保護層から離隔して配置されていることを特徴とする請求項9に記載の光電子デバイス。
- 前記保護層の厚さより大きい高さを有し、前記板と接し、前記基板に置かれている追加の壁を更に備えていることを特徴とする請求項9又は10に記載の光電子デバイス。
- 前記発光ダイオードの周りで前記電極層を覆う導電層を更に備えていることを特徴とする請求項1~11のいずれか1つに記載の光電子デバイス。
- 前記基板は、好ましくはシリコン、ゲルマニウム、炭化シリコン、GaN若しくはGaAsのようなIII-V 族化合物、又はZnO で形成されていることを特徴とする請求項1~12のいずれか1つに記載の光電子デバイス。
- 前記半導体部材は、III-V 族化合物、特に窒化ガリウム又はII-VI 族化合物から主に夫々形成されていることを特徴とする請求項2に記載の光電子デバイス。
- 表示画面又は投影デバイスであることを特徴とする請求項1~14のいずれか1つに記載の光電子デバイス。
- 前記発光ダイオードによって放射される放射光を少なくとも部分的に吸収及び/又は反射することができるフィルタを前記保護層上に更に備えていることを特徴とする請求項1~15のいずれか1つに記載の光電子デバイス。
- 前記発光ダイオードによって放射される放射光を少なくとも部分的に吸収及び/又は反射することができるフィルタを前記板上に更に備えていることを特徴とする請求項9に記載の光電子デバイス。
- 前記壁は前記基板の一部に相当することを特徴とする請求項1~17のいずれか1つに記載の光電子デバイス。
- 光電子デバイスを製造する方法であって、
a) 対向する第1の表面及び第2の表面を有する基板に、前記第1の表面から前記第2の表面に延びて、互いに電気的に絶縁された半導体又は導電性の第1の部分を前記基板に画定する側方の電気絶縁性素子を形成する工程、
b) 前記第1の部分毎に、前記第1の表面に置かれて前記第1の部分と電気的に結合されている一群の発光ダイオードを形成する工程、
c) 少なくとも前記発光ダイオードの発光波長領域で少なくとも部分的に透明であり、前記発光ダイオードの全てを覆う導電性の電極層を形成する工程、及び
d) 前記電極層を覆う第1の誘電体材料の保護層であって、少なくとも前記発光ダイオードの発光波長領域及び前記保護層に設けられ得る発光体の発光波長領域で少なくとも部分的に透明な、封止層及び発光体層の少なくとも1つである前記保護層と、前記保護層に少なくとも部分的に延びて、前記一群の発光ダイオードを囲むか又は前記一群の発光ダイオードと対向する第2の部分を前記保護層に画定する壁とを形成する工程
を有し、
前記壁は、
前記第1の誘電体材料とは異なる少なくとも1つの第2の材料であって、空気、金属、半導体材料、金属合金、並びに、少なくとも前記発光ダイオード及び前記発光体の発光波長領域で部分的に透明な材料を有する群に含まれる前記少なくとも1つの第2の材料を含んでいるか、或いは、
少なくとも前記発光ダイオード及び前記発光体の発光波長領域で不透明な又は反射する層で覆われた少なくとも前記発光ダイオード及び前記発光体の発光波長領域で少なくとも部分的に透明な材料で形成されたコアを含んでいることを特徴とする方法。 - 各発光ダイオードは、少なくとも1つのワイヤ状、円錐形又はテーパ状の半導体部材を有しており、前記半導体部材は、前記半導体部材の最上部及び/又は少なくとも側面の一部で前記発光ダイオードの放射光の大部分を供給することができる少なくとも1つの活性層を有するシェルで覆われていることを特徴とする請求項19に記載の方法。
- 前記保護層は、各発光ダイオードを囲んでいることを特徴とする請求項19又は20に記載の方法。
- 前記保護層は前記発光ダイオードを囲んでいないことを特徴とする請求項19又は20に記載の方法。
- 前記壁は、少なくとも前記保護層の厚さ全体に亘って延びていることを特徴とする請求項19~22のいずれか1つに記載の方法。
- 前記壁の少なくとも1つは、前記保護層の厚さより小さい厚さの固体ブロックを有していることを特徴とする請求項19~23のいずれか1つに記載の方法。
- 前記保護層は発光体を有することを特徴とする請求項19~24のいずれか1つに記載の方法。
- 前記保護層は、単結晶の発光体を有することを特徴とする請求項19~25のいずれか1つに記載の方法。
- 少なくとも前記発光ダイオード及び前記発光体の発光波長領域で少なくとも部分的に透明な材料で形成され、前記保護層を覆う板を前記基板に機械的に結合することを特徴とする請求項19~26のいずれか1つに記載の方法。
- 前記板を、前記保護層から離隔して配置することを特徴とする請求項27に記載の方法。
- 前記保護層の厚さより大きい高さを有し、前記板と接し、前記基板に置かれる追加の壁を形成することを特徴とする請求項27又は28に記載の方法。
- 前記発光ダイオードの周りで前記電極層を覆う導電層を形成することを特徴とする請求項19~29のいずれか1つに記載の方法。
- 前記基板を、シリコン、ゲルマニウム、炭化シリコン、GaN 若しくはGaAsのようなIII-V 族化合物、又はZnO で形成することを特徴とする請求項19~30のいずれか1つに記載の方法。
- 前記半導体部材を、III-V 族化合物、特に窒化ガリウム又はII-VI 族化合物から主に夫々形成することを特徴とする請求項20に記載の方法。
- 前記光電子デバイスは、表示画面又は投影デバイスであることを特徴とする請求項19~32のいずれか1つに記載の方法。
- 前記発光ダイオードによって放射される放射光を少なくとも部分的に吸収及び/又は反射することができるフィルタを前記保護層上に形成することを特徴とする請求項19~33のいずれか1つに記載の方法。
- 前記発光ダイオードによって放射される放射光を少なくとも部分的に吸収及び/又は反射することができるフィルタを前記板上に形成することを特徴とする請求項27に記載の方法。
- 前記壁は前記基板の一部に相当することを特徴とする請求項19~35のいずれか1つに記載の方法。
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PCT/FR2017/051671 WO2018002485A1 (fr) | 2016-06-30 | 2017-06-22 | Dispositif optoelectronique a pixels a contraste et luminance améliorés |
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