FR3093861B1 - Procédé d’enrobage de puces - Google Patents

Procédé d’enrobage de puces Download PDF

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Publication number
FR3093861B1
FR3093861B1 FR1902486A FR1902486A FR3093861B1 FR 3093861 B1 FR3093861 B1 FR 3093861B1 FR 1902486 A FR1902486 A FR 1902486A FR 1902486 A FR1902486 A FR 1902486A FR 3093861 B1 FR3093861 B1 FR 3093861B1
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FR
France
Prior art keywords
inter
chip
coating film
sub
photosensitive coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1902486A
Other languages
English (en)
Other versions
FR3093861A1 (fr
Inventor
Aurélien Suhm
Maxime Argoud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1902486A priority Critical patent/FR3093861B1/fr
Priority to US17/435,102 priority patent/US11955585B2/en
Priority to EP20725802.1A priority patent/EP3921862A1/fr
Priority to PCT/FR2020/050410 priority patent/WO2020183090A1/fr
Priority to TW109107858A priority patent/TW202105538A/zh
Publication of FR3093861A1 publication Critical patent/FR3093861A1/fr
Application granted granted Critical
Publication of FR3093861B1 publication Critical patent/FR3093861B1/fr
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Materials For Photolithography (AREA)

Abstract

L’invention concerne un procédé d’enrobage de puces (110) reposant, par une face arrière opposée à une face avant, sur une face principale d’un substrat support (100), et séparées les unes des autres par un espace inter puce, le procédé comprend les étapes suivantes :a) une étape de formation d’un film d’enrobage photosensible en recouvrement des faces avant et des espaces inter puce,b) une première séquence photo lithographique qui comprend une sous-étape b1) d’insolation, et une sous-étape b2) de dissolution, ladite séquence conduisant à un retrait partiel du film d’enrobage photosensible de manière à conserver ledit film exclusivement au niveau des espaces inter puce et, avantageusement en retrait par rapport aux faces avant. Figure pour l’abrégé : figure 2d.
FR1902486A 2019-03-12 2019-03-12 Procédé d’enrobage de puces Active FR3093861B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1902486A FR3093861B1 (fr) 2019-03-12 2019-03-12 Procédé d’enrobage de puces
US17/435,102 US11955585B2 (en) 2019-03-12 2020-03-02 Method for coating chips
EP20725802.1A EP3921862A1 (fr) 2019-03-12 2020-03-02 Procede d'enrobage de puces
PCT/FR2020/050410 WO2020183090A1 (fr) 2019-03-12 2020-03-02 Procede d'enrobage de puces
TW109107858A TW202105538A (zh) 2019-03-12 2020-03-10 用於晶片之塗層方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1902486A FR3093861B1 (fr) 2019-03-12 2019-03-12 Procédé d’enrobage de puces
FR1902486 2019-03-12

Publications (2)

Publication Number Publication Date
FR3093861A1 FR3093861A1 (fr) 2020-09-18
FR3093861B1 true FR3093861B1 (fr) 2021-09-17

Family

ID=67107845

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1902486A Active FR3093861B1 (fr) 2019-03-12 2019-03-12 Procédé d’enrobage de puces

Country Status (5)

Country Link
US (1) US11955585B2 (fr)
EP (1) EP3921862A1 (fr)
FR (1) FR3093861B1 (fr)
TW (1) TW202105538A (fr)
WO (1) WO2020183090A1 (fr)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8507320B2 (en) 2008-03-18 2013-08-13 Infineon Technologies Ag Electronic device including a carrier and a semiconductor chip attached to the carrier and manufacturing thereof
US8470641B2 (en) * 2009-12-17 2013-06-25 Texas Instruments Incorporated Exposed mold
US9508623B2 (en) 2014-06-08 2016-11-29 UTAC Headquarters Pte. Ltd. Semiconductor packages and methods of packaging semiconductor devices
FR3031242B1 (fr) * 2014-12-29 2016-12-30 Aledia Procede de fabrication de nanofils ou de microfils semiconducteurs a pieds isoles
US10403669B2 (en) * 2015-06-15 2019-09-03 Sony Corporation Semiconductor device and electronic device having a chip size package (CSP) stack
CN106887488B (zh) * 2015-12-15 2019-06-11 群创光电股份有限公司 发光二极管及使用此发光二极管所制得的显示装置
FR3053530B1 (fr) 2016-06-30 2018-07-27 Aledia Dispositif optoelectronique a pixels a contraste et luminance ameliores
JP2018067659A (ja) * 2016-10-20 2018-04-26 日立化成株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
EP3921862A1 (fr) 2021-12-15
US11955585B2 (en) 2024-04-09
US20220149245A1 (en) 2022-05-12
TW202105538A (zh) 2021-02-01
WO2020183090A1 (fr) 2020-09-17
FR3093861A1 (fr) 2020-09-18

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