JP7164586B2 - Ledパッケージおよびその製造方法 - Google Patents
Ledパッケージおよびその製造方法 Download PDFInfo
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- JP7164586B2 JP7164586B2 JP2020209479A JP2020209479A JP7164586B2 JP 7164586 B2 JP7164586 B2 JP 7164586B2 JP 2020209479 A JP2020209479 A JP 2020209479A JP 2020209479 A JP2020209479 A JP 2020209479A JP 7164586 B2 JP7164586 B2 JP 7164586B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Description
Claims (7)
- 基板上に複数のLED素子を実装する工程と、
前記LED素子からの出射光の波長を変換する蛍光体粒子の表面の少なくとも一部に被覆層を形成して構成された波長変換粒子を含有する透明または透光性の第1の樹脂を前記基板上に充填して、前記複数のLED素子を封止する工程と、
前記基板および前記第1の樹脂を切断して前記複数のLED素子を分割する工程と、
前記切断により露出した前記第1の樹脂の切断面に、前記波長変換粒子を含有しない第2の樹脂による防湿コーティングを形成する工程と、
を有することを特徴とするLEDパッケージの製造方法。 - 前記形成する工程では、吹付けまたは蒸着により前記切断面のみに前記防湿コーティングを形成する、請求項1に記載の製造方法。
- 前記第2の樹脂の吸水率は1%以下である、請求項1又は2に記載の製造方法。
- 前記切断面は前記第1の樹脂の側面であり、
前記形成する工程では、前記第1の樹脂の側面に前記第2の樹脂を塗布する、請求項1~3のいずれか一項に記載の製造方法。 - 前記第1の樹脂の上面を研磨する工程を更に含み、
前記形成する工程では、前記第1の樹脂の上面に前記防湿コーティングを形成する、請求項1~4のいずれか一項に記載の製造方法。 - 基板と、
前記基板上に実装されたLED素子と、
前記LED素子からの出射光の波長を変換する蛍光体粒子の表面の少なくとも一部に被覆層を形成して構成された波長変換粒子を含有し、前記基板上に充填されて前記LED素子を封止する透明または透光性の第1の樹脂と、
前記波長変換粒子を含有せず、前記第1の樹脂の表面を被覆する第2の樹脂による防湿コーティングと、を有し、
前記基板の側面及び前記第1の樹脂の側面は、同一面を形成し、
前記防湿コーティングは、前記基板及び前記第1の樹脂の側面よりも外側に配置され、
前記第1の樹脂の前記表面は、前記被覆層が切断または研磨された前記波長変換粒子の面を含み、前記波長変換粒子の面を前記第2の樹脂で保護することを特徴とするLEDパッケージ。 - 基板と、
前記基板上に実装されたLED素子と、
前記LED素子からの出射光の波長を変換する蛍光体粒子の表面の少なくとも一部に被覆層を形成して構成された波長変換粒子を含有し、前記基板上に充填されて前記LED素子を封止する透明または透光性の第1の樹脂と、
前記波長変換粒子を含有せず、前記被覆層が切断または研磨された前記波長変換粒子の面を被覆する第2の樹脂による防湿コーティングと、を有し、
前記基板の側面及び前記第1の樹脂の側面は、同一面を形成し、
前記防湿コーティングは、前記基板及び前記第1の樹脂の側面よりも外側に配置される、ことを特徴とするLEDパッケージ。
Applications Claiming Priority (2)
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JP2017017853 | 2017-02-02 | ||
JP2017017853 | 2017-02-02 |
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JP2018566142A Division JP6813599B2 (ja) | 2017-02-02 | 2018-02-02 | Ledパッケージおよびその製造方法 |
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JP2021061416A JP2021061416A (ja) | 2021-04-15 |
JP7164586B2 true JP7164586B2 (ja) | 2022-11-01 |
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JP2018566142A Active JP6813599B2 (ja) | 2017-02-02 | 2018-02-02 | Ledパッケージおよびその製造方法 |
JP2020209479A Active JP7164586B2 (ja) | 2017-02-02 | 2020-12-17 | Ledパッケージおよびその製造方法 |
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US (2) | US20190348579A1 (ja) |
JP (2) | JP6813599B2 (ja) |
CN (1) | CN110235259A (ja) |
DE (1) | DE112018000656T5 (ja) |
WO (1) | WO2018143437A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6940775B2 (ja) * | 2018-10-30 | 2021-09-29 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN109890188B (zh) * | 2019-02-15 | 2021-03-23 | 华为技术有限公司 | 封装组件及电子设备 |
JP7403072B2 (ja) * | 2020-01-29 | 2023-12-22 | パナソニックIpマネジメント株式会社 | 発光装置及び照明装置 |
JP7288200B2 (ja) * | 2020-07-30 | 2023-06-07 | 日亜化学工業株式会社 | 発光装置および梱包体 |
TWI789740B (zh) * | 2021-04-13 | 2023-01-11 | 光感動股份有限公司 | 發光二極體封裝結構及發光二極體封裝結構製造方法 |
CN113514300A (zh) * | 2021-07-09 | 2021-10-19 | 长鑫存储技术有限公司 | 半导体结构处理治具及半导体结构处理治具制作方法 |
WO2023162462A1 (ja) * | 2022-02-22 | 2023-08-31 | ソニーグループ株式会社 | 発光装置及び画像表示装置 |
TWI813406B (zh) * | 2022-08-02 | 2023-08-21 | 啟碁科技股份有限公司 | 封裝結構及其製造方法 |
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-
2018
- 2018-02-02 US US16/482,986 patent/US20190348579A1/en not_active Abandoned
- 2018-02-02 CN CN201880009651.3A patent/CN110235259A/zh active Pending
- 2018-02-02 DE DE112018000656.5T patent/DE112018000656T5/de active Pending
- 2018-02-02 WO PCT/JP2018/003689 patent/WO2018143437A1/ja active Application Filing
- 2018-02-02 JP JP2018566142A patent/JP6813599B2/ja active Active
-
2020
- 2020-12-17 JP JP2020209479A patent/JP7164586B2/ja active Active
-
2022
- 2022-01-11 US US17/573,527 patent/US11626546B2/en active Active
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JP2000200928A (ja) | 1998-12-29 | 2000-07-18 | Citizen Electronics Co Ltd | 表面実装型発光ダイオ―ド |
JP2002223008A (ja) | 2000-10-17 | 2002-08-09 | Koninkl Philips Electronics Nv | 発光素子 |
JP2006343409A (ja) | 2005-06-07 | 2006-12-21 | Seiko Instruments Inc | 照明装置およびそれを用いた表示装置 |
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JP2013004807A (ja) | 2011-06-17 | 2013-01-07 | Toshiba Corp | 半導体発光装置およびその製造方法 |
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Also Published As
Publication number | Publication date |
---|---|
CN110235259A (zh) | 2019-09-13 |
WO2018143437A1 (ja) | 2018-08-09 |
US11626546B2 (en) | 2023-04-11 |
US20220140207A1 (en) | 2022-05-05 |
US20190348579A1 (en) | 2019-11-14 |
JPWO2018143437A1 (ja) | 2019-11-07 |
JP6813599B2 (ja) | 2021-01-13 |
JP2021061416A (ja) | 2021-04-15 |
DE112018000656T5 (de) | 2019-10-24 |
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