JP7159456B2 - 基板処理方法及び基板処理装置 - Google Patents
基板処理方法及び基板処理装置 Download PDFInfo
- Publication number
- JP7159456B2 JP7159456B2 JP2021512198A JP2021512198A JP7159456B2 JP 7159456 B2 JP7159456 B2 JP 7159456B2 JP 2021512198 A JP2021512198 A JP 2021512198A JP 2021512198 A JP2021512198 A JP 2021512198A JP 7159456 B2 JP7159456 B2 JP 7159456B2
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- JP
- Japan
- Prior art keywords
- processing
- wafer
- substrate
- ruthenium
- recipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims description 105
- 238000003672 processing method Methods 0.000 title claims description 10
- 239000007788 liquid Substances 0.000 claims description 194
- 238000005530 etching Methods 0.000 claims description 82
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 68
- 229910052707 ruthenium Inorganic materials 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 60
- 229910000929 Ru alloy Inorganic materials 0.000 claims description 35
- 238000011084 recovery Methods 0.000 claims description 35
- 239000007864 aqueous solution Substances 0.000 claims description 14
- TWLXDPFBEPBAQB-UHFFFAOYSA-N orthoperiodic acid Chemical compound OI(O)(O)(O)(O)=O TWLXDPFBEPBAQB-UHFFFAOYSA-N 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 10
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 6
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 204
- 239000000126 substance Substances 0.000 description 47
- 229910021641 deionized water Inorganic materials 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000001035 drying Methods 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000002516 radical scavenger Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- -1 sulfuric acid peroxide Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019070739 | 2019-04-02 | ||
JP2019070739 | 2019-04-02 | ||
PCT/JP2020/015141 WO2020204121A1 (ja) | 2019-04-02 | 2020-04-02 | 基板処理方法及び基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020204121A1 JPWO2020204121A1 (zh) | 2020-10-08 |
JP7159456B2 true JP7159456B2 (ja) | 2022-10-24 |
Family
ID=72668050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021512198A Active JP7159456B2 (ja) | 2019-04-02 | 2020-04-02 | 基板処理方法及び基板処理装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7159456B2 (zh) |
TW (1) | TW202105508A (zh) |
WO (1) | WO2020204121A1 (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001068463A (ja) | 1999-08-31 | 2001-03-16 | Hitachi Ltd | 半導体集積回路装置の量産方法 |
JP2001237389A (ja) | 2000-02-24 | 2001-08-31 | Nec Corp | 半導体装置の製造方法 |
JP2006148149A (ja) | 2005-12-15 | 2006-06-08 | Renesas Technology Corp | 半導体集積回路装置の量産方法 |
JP2010278386A (ja) | 2009-06-01 | 2010-12-09 | Renesas Electronics Corp | 半導体装置の製造方法 |
WO2011074601A1 (ja) | 2009-12-17 | 2011-06-23 | 昭和電工株式会社 | ルテニウム系金属のエッチング用組成物およびその調製方法 |
-
2020
- 2020-03-25 TW TW109110004A patent/TW202105508A/zh unknown
- 2020-04-02 JP JP2021512198A patent/JP7159456B2/ja active Active
- 2020-04-02 WO PCT/JP2020/015141 patent/WO2020204121A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001068463A (ja) | 1999-08-31 | 2001-03-16 | Hitachi Ltd | 半導体集積回路装置の量産方法 |
JP2001237389A (ja) | 2000-02-24 | 2001-08-31 | Nec Corp | 半導体装置の製造方法 |
JP2006148149A (ja) | 2005-12-15 | 2006-06-08 | Renesas Technology Corp | 半導体集積回路装置の量産方法 |
JP2010278386A (ja) | 2009-06-01 | 2010-12-09 | Renesas Electronics Corp | 半導体装置の製造方法 |
WO2011074601A1 (ja) | 2009-12-17 | 2011-06-23 | 昭和電工株式会社 | ルテニウム系金属のエッチング用組成物およびその調製方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2020204121A1 (ja) | 2020-10-08 |
TW202105508A (zh) | 2021-02-01 |
JPWO2020204121A1 (zh) | 2020-10-08 |
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