JP7159059B2 - 積層基板及び積層基板製造方法 - Google Patents

積層基板及び積層基板製造方法 Download PDF

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Publication number
JP7159059B2
JP7159059B2 JP2019002179A JP2019002179A JP7159059B2 JP 7159059 B2 JP7159059 B2 JP 7159059B2 JP 2019002179 A JP2019002179 A JP 2019002179A JP 2019002179 A JP2019002179 A JP 2019002179A JP 7159059 B2 JP7159059 B2 JP 7159059B2
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Japan
Prior art keywords
insulating layer
layer
conductor
insulating material
via hole
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JP2019002179A
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English (en)
Japanese (ja)
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JP2020113609A5 (https=
JP2020113609A (ja
Inventor
美沙紀 小松
克哉 深瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2019002179A priority Critical patent/JP7159059B2/ja
Priority to US16/728,051 priority patent/US11289403B2/en
Publication of JP2020113609A publication Critical patent/JP2020113609A/ja
Publication of JP2020113609A5 publication Critical patent/JP2020113609A5/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/20Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662Laminate layers, e.g. stacks of alternating high-k metal oxides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42Vias, e.g. via plugs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427Power or ground buses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0271Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2072Anchoring, i.e. one structure gripping into another
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • H10W70/635Through-vias

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structure Of Printed Boards (AREA)
JP2019002179A 2019-01-09 2019-01-09 積層基板及び積層基板製造方法 Active JP7159059B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019002179A JP7159059B2 (ja) 2019-01-09 2019-01-09 積層基板及び積層基板製造方法
US16/728,051 US11289403B2 (en) 2019-01-09 2019-12-27 Multi-layer substrate and method for manufacturing multi-layer substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019002179A JP7159059B2 (ja) 2019-01-09 2019-01-09 積層基板及び積層基板製造方法

Publications (3)

Publication Number Publication Date
JP2020113609A JP2020113609A (ja) 2020-07-27
JP2020113609A5 JP2020113609A5 (https=) 2021-12-09
JP7159059B2 true JP7159059B2 (ja) 2022-10-24

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JP2019002179A Active JP7159059B2 (ja) 2019-01-09 2019-01-09 積層基板及び積層基板製造方法

Country Status (2)

Country Link
US (1) US11289403B2 (https=)
JP (1) JP7159059B2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019013544A (ja) * 2017-07-07 2019-01-31 株式会社三洋物産 遊技機
JP2019013543A (ja) * 2017-07-07 2019-01-31 株式会社三洋物産 遊技機
US11171084B2 (en) * 2020-04-06 2021-11-09 International Business Machines Corporation Top via with next level line selective growth
KR102845137B1 (ko) * 2020-10-07 2025-08-12 삼성전자주식회사 안테나를 포함하는 전자 장치
JP2023111532A (ja) * 2022-01-31 2023-08-10 株式会社アイシン 半導体装置および半導体装置の製造方法
WO2024135456A1 (ja) * 2022-12-20 2024-06-27 京セラ株式会社 配線基板およびその製造方法
JP2024167847A (ja) * 2023-05-22 2024-12-04 イビデン株式会社 プリント配線板及びプリント配線板の製造方法
WO2025069676A1 (ja) * 2023-09-29 2025-04-03 株式会社村田製作所 コンデンサ素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322659A (ja) 2004-05-06 2005-11-17 Matsushita Electric Ind Co Ltd 配線基板およびその製造方法ならびに半導体装置
JP2013229525A (ja) 2012-04-26 2013-11-07 Ngk Spark Plug Co Ltd 多層配線基板
US20170188458A1 (en) 2015-12-28 2017-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Opening in the Pad for Bonding Integrated Passive Device in InFO Package

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4245215B2 (ja) 1997-12-29 2009-03-25 イビデン株式会社 多層プリント配線板
US6313026B1 (en) * 2000-04-10 2001-11-06 Micron Technology, Inc. Microelectronic contacts and methods for producing same
WO2003071843A1 (en) * 2002-02-22 2003-08-28 Fujikura Ltd. Multilayer wiring board, base for multilayer wiring board, printed wiring board, and its manufacturing method
US20050081376A1 (en) * 2003-10-21 2005-04-21 Sir Jiun H. Robust interlocking via
JP2006093465A (ja) * 2004-09-24 2006-04-06 Toshiba Corp 樹脂封止型電子装置およびその製造方法
US7446036B1 (en) * 2007-12-18 2008-11-04 International Business Machines Corporation Gap free anchored conductor and dielectric structure and method for fabrication thereof
JP2018017987A (ja) * 2016-07-29 2018-02-01 株式会社ジャパンディスプレイ 表示装置
JP6762793B2 (ja) * 2016-07-29 2020-09-30 株式会社ジャパンディスプレイ 電子機器及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322659A (ja) 2004-05-06 2005-11-17 Matsushita Electric Ind Co Ltd 配線基板およびその製造方法ならびに半導体装置
JP2013229525A (ja) 2012-04-26 2013-11-07 Ngk Spark Plug Co Ltd 多層配線基板
US20170188458A1 (en) 2015-12-28 2017-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Opening in the Pad for Bonding Integrated Passive Device in InFO Package
CN106952885A (zh) 2015-12-28 2017-07-14 台湾积体电路制造股份有限公司 封装件

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JP2020113609A (ja) 2020-07-27
US20200219794A1 (en) 2020-07-09
US11289403B2 (en) 2022-03-29

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