JP7150161B2 - バリアーフィルム - Google Patents
バリアーフィルム Download PDFInfo
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- JP7150161B2 JP7150161B2 JP2021521131A JP2021521131A JP7150161B2 JP 7150161 B2 JP7150161 B2 JP 7150161B2 JP 2021521131 A JP2021521131 A JP 2021521131A JP 2021521131 A JP2021521131 A JP 2021521131A JP 7150161 B2 JP7150161 B2 JP 7150161B2
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- 230000004888 barrier function Effects 0.000 title claims description 109
- 229920001709 polysilazane Polymers 0.000 claims description 62
- 238000005530 etching Methods 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 34
- 230000035699 permeability Effects 0.000 claims description 33
- 229910052757 nitrogen Inorganic materials 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 230000003746 surface roughness Effects 0.000 claims description 12
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 11
- 125000003545 alkoxy group Chemical group 0.000 claims description 10
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 125000003342 alkenyl group Chemical group 0.000 claims description 6
- 125000000304 alkynyl group Chemical group 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 238000000992 sputter etching Methods 0.000 claims description 4
- 125000003282 alkyl amino group Chemical group 0.000 claims description 2
- 125000005103 alkyl silyl group Chemical group 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 196
- 238000009832 plasma treatment Methods 0.000 description 39
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 33
- 238000000034 method Methods 0.000 description 31
- 125000004432 carbon atom Chemical group C* 0.000 description 25
- 239000011247 coating layer Substances 0.000 description 25
- 239000000203 mixture Substances 0.000 description 23
- 238000000576 coating method Methods 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
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- -1 polyethylene terephthalate Polymers 0.000 description 16
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- 229910052760 oxygen Inorganic materials 0.000 description 13
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 12
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- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 6
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- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
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- 125000002723 alicyclic group Chemical group 0.000 description 3
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- 229910052736 halogen Inorganic materials 0.000 description 3
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- 150000002431 hydrogen Chemical group 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
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- 239000005022 packaging material Substances 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
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- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- ZVYPNSGWLVPWSF-UHFFFAOYSA-N 4,6-dichloro-1-benzofuran Chemical compound ClC1=CC(Cl)=C2C=COC2=C1 ZVYPNSGWLVPWSF-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
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- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 125000004423 acyloxy group Chemical group 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 2
- 125000004448 alkyl carbonyl group Chemical group 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- DRUOQOFQRYFQGB-UHFFFAOYSA-N ethoxy(dimethyl)silicon Chemical compound CCO[Si](C)C DRUOQOFQRYFQGB-UHFFFAOYSA-N 0.000 description 2
- 235000013305 food Nutrition 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 2
- 229940117969 neopentyl glycol Drugs 0.000 description 2
- OTLDLKLSNZMTTA-UHFFFAOYSA-N octahydro-1h-4,7-methanoindene-1,5-diyldimethanol Chemical compound C1C2C3C(CO)CCC3C1C(CO)C2 OTLDLKLSNZMTTA-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
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- 229910000077 silane Inorganic materials 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- UQJIGSKKIVHXJB-UHFFFAOYSA-N (4-aminophenyl)silicon Chemical compound NC1=CC=C([Si])C=C1 UQJIGSKKIVHXJB-UHFFFAOYSA-N 0.000 description 1
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
- CZZVAVMGKRNEAT-UHFFFAOYSA-N 2,2-dimethylpropane-1,3-diol;3-hydroxy-2,2-dimethylpropanoic acid Chemical compound OCC(C)(C)CO.OCC(C)(C)C(O)=O CZZVAVMGKRNEAT-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- DCQBZYNUSLHVJC-UHFFFAOYSA-N 3-triethoxysilylpropane-1-thiol Chemical compound CCO[Si](OCC)(OCC)CCCS DCQBZYNUSLHVJC-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- YXALYBMHAYZKAP-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-ylmethyl 7-oxabicyclo[4.1.0]heptane-4-carboxylate Chemical compound C1CC2OC2CC1C(=O)OCC1CC2OC2CC1 YXALYBMHAYZKAP-UHFFFAOYSA-N 0.000 description 1
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- SMEGJBVQLJJKKX-HOTMZDKISA-N [(2R,3S,4S,5R,6R)-5-acetyloxy-3,4,6-trihydroxyoxan-2-yl]methyl acetate Chemical compound CC(=O)OC[C@@H]1[C@H]([C@@H]([C@H]([C@@H](O1)O)OC(=O)C)O)O SMEGJBVQLJJKKX-HOTMZDKISA-N 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
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- 125000005018 aryl alkenyl group Chemical group 0.000 description 1
- 125000005015 aryl alkynyl group Chemical group 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
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- LJWBIAMZBJWAOW-UHFFFAOYSA-N benzhydryloxysilane Chemical compound C=1C=CC=CC=1C(O[SiH3])C1=CC=CC=C1 LJWBIAMZBJWAOW-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
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- BODAWKLCLUZBEZ-UHFFFAOYSA-N diethoxy(phenyl)silicon Chemical compound CCO[Si](OCC)C1=CC=CC=C1 BODAWKLCLUZBEZ-UHFFFAOYSA-N 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- MNFGEHQPOWJJBH-UHFFFAOYSA-N diethoxy-methyl-phenylsilane Chemical compound CCO[Si](C)(OCC)C1=CC=CC=C1 MNFGEHQPOWJJBH-UHFFFAOYSA-N 0.000 description 1
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 description 1
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- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 1
- CIQDYIQMZXESRD-UHFFFAOYSA-N dimethoxy(phenyl)silane Chemical compound CO[SiH](OC)C1=CC=CC=C1 CIQDYIQMZXESRD-UHFFFAOYSA-N 0.000 description 1
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
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Images
Classifications
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- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2483/14—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2483/16—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
Description
本出願は、2018年10月26日付けの韓国特許出願第10-2018-0128816号に基づく優先権の利益を主張し、当該韓国特許出願の文献に開示されたすべての内容は、本明細書の一部として含まれる。
本出願は、バリアーフィルムに関する。具体的に、本出願は、酸素や水分などのような外部物質に対する遮断特性に優れたバリアーフィルムに関する。
*透湿度:MOCON Aquatron IIを利用して、製造されたバリアーフィルムの水分透過度を38℃および100%の相対湿度の条件で測定した。(条件1での透湿度)。これとは別途に、85℃および85%相対湿度条件で250時間の間バリアーフィルムを保管し、38℃および100%相対湿度の条件でバリアーフィルムの水分透過度を再び測定した(条件2での透湿度)。
*エッチング速度および元素含量の分析:無機物層の表面で基材方向に深さ(厚み)方向の元素分布の分析は、Arイオンを使用して無機層を少しずつ除去しながら進めた。エッチング条件は、基準物質であるTa2O5に対してエッチング速度が0.09nm/sであるArイオン設定を使用した。また、XPS(X-ray photoelectron spectroscopy)を利用して無機層の元素含量を分析した(基材に由来する不純物としてCが検出され得る)。
下記のように製造されたバリアーフィルムに対する、厚み、エッチング速度および透湿度(条件1)を測定し、その結果を表1に記載した。
厚みが約50μmのPET(poly(ethylene terephthalate))(Teijin社製品)フィルム上に厚み1μmの平坦化層を積層し、前記平坦化層上に無機物層を形成した。具体的な過程は、下記の通りである。
-圧力250mTorr(流量sccm基準Ar:O2:H2O=1.5:1:1の雰囲気)
-ポリシラザンコーティング面と電極の距離25mm
-電力密度:直流電力0.8W/cm2を25秒間供給
実施例1で製作した無機コーティング層1の上に、さらにシラザン濃度1%であるコーティング液を使用してポリシラザン層を形成し、実施例1と同じ条件でプラズマ処理を行って、無機コーティング層2をさらに積層した。
実施例1で製作した無機コーティング層1の上に、さらにシラザン濃度2.4%であるコーティング液を使用してポリシラザン層を形成し、実施例1と同じ条件でプラズマ処理を行って、無機コーティング層2-1をさらに積層した。
実施例1で製作した無機コーティング層1の上に、さらにシラザン濃度3.7%であるコーティング液を使用してポリシラザン層を形成し、実施例1と同じ条件でプラズマ処理を行って、無機コーティング層2-2をさらに積層した。
無機コーティング層の製造時にシラザン濃度2.4%であるコーティング液を平坦化層上に塗布し、下記のようにプラズマ処理条件を異ならしめたことを除いて、実施例1と同じ方法で基材層/平坦化層/無機コーティング層1-1を含むバリアーフィルムを製造した。以後、前記無機コーティング層1-1上にシラザン濃度2.4%であるコーティング液を塗布し、下記条件でプラズマ処理を行って、基材層/平坦化層/無機コーティング層1-1/無機コーティング層2-3を含むバリアーフィルムを製造した。
-圧力150mTorr(流量sccm基準Ar:O2:H2O=1.5:1:1の雰囲気)
-ポリシラザンコーティング面と電極の距離40mm
-電力密度:直流電力0.45W/cm2を45秒間供給
4.5%で希釈されたポリシラザン溶液を使用し、下記のようにプラズマ条件を異ならしめたことを除いて、実施例1と同一にバリアーフィルムを製造した。
-圧力100mTorr(流量sccm基準Ar:O2=1:1の雰囲気)
-ポリシラザンコーティング面と電極の距離10mm
-電力密度:直流電力0.3W/cm2を65秒間供給
4.9%で希釈されたポリシラザン溶液を使用し、電極との距離が175mmであることを除いて、比較例1と同じ方法でバリアーフィルムを製造した。
下記のように製造されたバリアーフィルムに対する、厚み、エッチング速度と透湿度(条件1および条件2)を測定し、その結果を表2および表3に記載した。
厚みが約50μmであるPET(poly(ethylene terephthalate))(Teijin社製品)フィルム上に厚み1μmの平坦化層を積層し、前記平坦化層上に無機物層を形成した。具体的な過程は、下記の通りである。
-圧力250mTorr(流量sccm基準Ar:O2:H2O=1.5:1:1の雰囲気)
-ポリシラザンコーティング面と電極の距離25mm
-電力密度:直流電力0.8W/cm2を25秒間供給
無機コーティング層1’-1と無機コーティング層2’-1の形成時に使用されたシラザン濃度がいずれも2.4%であることを除いて、実施例6と同じ方法でバリアーフィルムを製造した。
無機層1’-2と無機層2’-2の形成時に使用されたシラザン濃度がそれぞれ1.1%および3.7%であることを除いて、実施例6と同じ方法でバリアーフィルムを製造した。
無機層1’-3と無機層2’-3の形成時に使用されたシラザン濃度がそれぞれ1.8%および3.1%であることを除いて、実施例6と同じ方法でバリアーフィルムを製造した。
Claims (10)
- 基材層;およびSi、N、およびOを含み、XPSにより測定されるSi、N、およびOの元素含量(atomic%)が互いに異なる第1領域および第2領域を含む無機層;を含み、
前記無機層は、Ta 2 O 5 を0.09nm/s速度でエッチングするArイオンエッチング条件に対する厚み方向でのエッチング速度が0.17nm/s以下であり、
前記第1領域は、前記第2領域より基材層に近く、
前記第1領域のO含量は、50~65atomic%の範囲内であり、Si含量は、35~45atomic%の範囲内であり、N含量は、1~15atomic%の範囲内であり、
前記第2領域のSi含量は、45~60atomic%の範囲内であり、N含量は、20~35atomic%の範囲内であり、O含量は、10~30atomic%の範囲内であり、
85℃および85%相対湿度の条件で250時間の間保管後、38℃温度および100%相対湿度の条件で測定された透湿度が5.0×10-4g/m2・day以下であるバリアーフィルム。 - 基材層と;
中間層と;
Si、N、およびOを含み、XPSにより測定されるSi、N、およびOの元素含量(atomic%)が互いに異なる第1領域および第2領域を含む無機層と;
を含み、
前記第1領域は、前記第2領域より基材層に近く、
前記第1領域のO含量は、50~65atomic%の範囲内であり、Si含量は、35~45atomic%の範囲内であり、N含量は、1~15atomic%の範囲内であり、
前記第2領域のSi含量は、45~60atomic%の範囲内であり、N含量は、20~35atomic%の範囲内であり、O含量は、10~30atomic%の範囲内であり、
前記無機層は、Ta2O5を0.09nm/s速度でエッチングするArイオンエッチング条件に対する厚み方向でのエッチング速度が0.17nm/s以下であるバリアーフィルム。 - 前記第1領域は、O含量(a)とSi含量(b)の比率(a/b)が1.1~1.9の範囲内である、請求項1又は2に記載のバリアーフィルム。
- 前記第2領域でのN含量は、第1領域でのN含量より大きい、請求項1~3のいずれか一項に記載のバリアーフィルム。
- 前記第2領域Si含量の最高値と第1領域O含量の最高値の差異が15atomic%以下である、請求項1~4のいずれか一項に記載のバリアーフィルム。
- 基材層;平坦化層;および無機層を順に含み、
前記平坦化層は、無機層と対向する面の平均表面粗さ(Rt)が15~45nmの範囲である、請求項1~6のいずれか一項に記載のバリアーフィルム。 - 前記第1領域は、平坦化層の平均表面粗さ(Rt)より2倍以上の厚みを有する、請求項7に記載のバリアーフィルム。
- 前記第2領域の厚みが50nm以上である、請求項1~8のいずれか一項に記載のバリアーフィルム。
- 請求項1~9のいずれか一項に記載のバリアーフィルムを含む電気または電子素子。
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