JP7140576B2 - ウェーハの分割方法 - Google Patents
ウェーハの分割方法 Download PDFInfo
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- JP7140576B2 JP7140576B2 JP2018132242A JP2018132242A JP7140576B2 JP 7140576 B2 JP7140576 B2 JP 7140576B2 JP 2018132242 A JP2018132242 A JP 2018132242A JP 2018132242 A JP2018132242 A JP 2018132242A JP 7140576 B2 JP7140576 B2 JP 7140576B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/047—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by ultrasonic cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/388—Trepanning, i.e. boring by moving the beam spot about an axis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/463—Mechanical treatment, e.g. grinding, ultrasonic treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Description
特許文献2には、改質層が形成されたウェーハに外力を加える方法が記載されている。この方法では、水槽に配置されたウェーハに超音波振動を伝えることにより、ウェーハを分割する。
本分割方法では、まず、公知の技術を用いて、ウェーハ1に改質層を形成する改質層形成工程を実施する。改質層の形成では、たとえば、パルスレーザー光線を照射する装置を準備する。この装置からのパルスレーザー光線は、ウェーハ1を透過する波長(たとえば赤外光領域)を有する。このパルスレーザー光線を、その集光点をウェーハ1の内部に位置づけた状態で、ウェーハ1に照射しながら、ウェーハ1の分割予定ライン3に沿って移動させる。これにより、ウェーハ1の内部に、図2に示すように、分割予定ライン3に沿った改質層31が形成される。
次に、改質層31を有するウェーハ1を、搬送装置によって載置テーブルに載置する搬送工程、および、載置テーブルを水槽において水没させる水没工程を実施する。ここで、本分割方法において用いられる搬送装置、載置テーブルおよび水槽の構成について説明する。
次に、水没しているウェーハ1を、超音波振動を用いてチップに分割する分割工程を実施する。分割工程では、図3に示すように、水没したウェーハ1上に超音波分割装置61を配置する。そして、ウェーハ1の分割予定ライン3に沿って、ウェーハ1の上方に位置づけられた超音波ホーン69を移動し、ウェーハ1の上面の分割予定ライン3に超音波振動を順に付与することによって、改質層31を起点にウェーハ1を分割する。
また、超音波振動子73の焦点を、改質層31に位置づけてもよい。
上記は、水槽51をX軸方向に移動させX軸方向に延びる分割予定ラインに沿って分割させているが、超音波ホーン69をY軸方向に移動させY軸方向に延びる分割予定ラインを分割させてもよい。
3:分割予定ライン、31:改質層、4:デバイス、
11:搬送装置、13:駆動源、15:アーム部、17:吸引源、171:連通路、
19:連結部材、21:搬送パッド、23:吸着部、25:枠体、
41:載置テーブル、51:水槽、52:ナット部、53:X軸方向移動手段、
55:摺動部材、57:モーター、59:ボールネジ
61:超音波分割装置、63:高周波電源供給部、65:Y軸方向移動手段、
66:ナット部、67:昇降手段、69:超音波ホーン、71:ハウジング、
73:超音波振動子、75:一次振動子、77:超音波振動板、79:輻射面
Claims (1)
- 超音波ホーンを用いたウェーハの分割方法であって、
該超音波ホーンは、超音波振動を集中させて付与する超音波ホーンであって、該超音波振動を集中させたい一点を中心に該一点側を凹ませてドーム状に形成される輻射面を有する振動子と、該振動子の外周部を保持するハウジングと、を備え、
該ウェーハを透過する波長を有するパルスレーザー光線を、その集光点を該ウェーハの内部に位置づけた状態で、該ウェーハに照射しながら、該ウェーハの分割予定ラインに沿って移動させることによって形成された、該分割予定ラインに沿った改質層を内部に有する該ウェーハを、載置テーブルに載置し、該載置テーブルを水槽において水没させる搬送および水没工程と、
水没した該ウェーハの該改質層に沿って、該ウェーハの上方に位置づけられた該超音波ホーンを移動し、該ウェーハの上面に該超音波振動を順に付与することによって該改質層を起点に該ウェーハを分割する分割工程と、
を備えるウェーハの分割方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018132242A JP7140576B2 (ja) | 2018-07-12 | 2018-07-12 | ウェーハの分割方法 |
CN201910566409.2A CN110712307B (zh) | 2018-07-12 | 2019-06-27 | 超声波变幅器和晶片的分割方法 |
TW108124121A TWI827631B (zh) | 2018-07-12 | 2019-07-09 | 晶圓的分割方法 |
KR1020190083364A KR20200007696A (ko) | 2018-07-12 | 2019-07-10 | 초음파 혼 및 웨이퍼의 분할 방법 |
Applications Claiming Priority (1)
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JP2018132242A JP7140576B2 (ja) | 2018-07-12 | 2018-07-12 | ウェーハの分割方法 |
Publications (2)
Publication Number | Publication Date |
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JP2020009988A JP2020009988A (ja) | 2020-01-16 |
JP7140576B2 true JP7140576B2 (ja) | 2022-09-21 |
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JP2018132242A Active JP7140576B2 (ja) | 2018-07-12 | 2018-07-12 | ウェーハの分割方法 |
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JP (1) | JP7140576B2 (ja) |
KR (1) | KR20200007696A (ja) |
CN (1) | CN110712307B (ja) |
TW (1) | TWI827631B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020044460A (ja) * | 2018-09-14 | 2020-03-26 | 株式会社ディスコ | 圧電振動板、超音波水噴射装置および超音波ホーン |
Families Citing this family (1)
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CN114670288B (zh) * | 2022-03-08 | 2023-08-15 | 海目星激光科技集团股份有限公司 | 超声波裂片方法及裂片装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000216126A (ja) | 1999-01-22 | 2000-08-04 | Dainippon Screen Mfg Co Ltd | 基板洗浄方法およびその装置 |
JP2005135964A (ja) | 2003-10-28 | 2005-05-26 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2014116338A (ja) | 2012-12-06 | 2014-06-26 | Lintec Corp | 割断装置及び割断方法 |
JP2015115350A (ja) | 2013-12-09 | 2015-06-22 | 株式会社ディスコ | ウェーハ加工装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07100434A (ja) * | 1993-10-07 | 1995-04-18 | Shimada Phys & Chem Ind Co Ltd | 超音波振動体および超音波洗浄装置 |
JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
JP2006114691A (ja) * | 2004-10-14 | 2006-04-27 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2007242787A (ja) * | 2006-03-07 | 2007-09-20 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP5758116B2 (ja) * | 2010-12-16 | 2015-08-05 | 株式会社ディスコ | 分割方法 |
JP6391471B2 (ja) * | 2015-01-06 | 2018-09-19 | 株式会社ディスコ | ウエーハの生成方法 |
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2018
- 2018-07-12 JP JP2018132242A patent/JP7140576B2/ja active Active
-
2019
- 2019-06-27 CN CN201910566409.2A patent/CN110712307B/zh active Active
- 2019-07-09 TW TW108124121A patent/TWI827631B/zh active
- 2019-07-10 KR KR1020190083364A patent/KR20200007696A/ko not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000216126A (ja) | 1999-01-22 | 2000-08-04 | Dainippon Screen Mfg Co Ltd | 基板洗浄方法およびその装置 |
JP2005135964A (ja) | 2003-10-28 | 2005-05-26 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2014116338A (ja) | 2012-12-06 | 2014-06-26 | Lintec Corp | 割断装置及び割断方法 |
JP2015115350A (ja) | 2013-12-09 | 2015-06-22 | 株式会社ディスコ | ウェーハ加工装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020044460A (ja) * | 2018-09-14 | 2020-03-26 | 株式会社ディスコ | 圧電振動板、超音波水噴射装置および超音波ホーン |
JP7295621B2 (ja) | 2018-09-14 | 2023-06-21 | 株式会社ディスコ | ウェーハの切削方法およびウェーハの分割方法 |
Also Published As
Publication number | Publication date |
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JP2020009988A (ja) | 2020-01-16 |
CN110712307B (zh) | 2023-03-03 |
TW202006811A (zh) | 2020-02-01 |
TWI827631B (zh) | 2024-01-01 |
KR20200007696A (ko) | 2020-01-22 |
CN110712307A (zh) | 2020-01-21 |
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