JP7126872B2 - 炭化ケイ素繊維上に湿度耐性コーティングを形成する方法 - Google Patents
炭化ケイ素繊維上に湿度耐性コーティングを形成する方法 Download PDFInfo
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Description
本特許書類は、35 U.S.C. §119(e)の下で、2017年6月15日に出願された米国仮特許出願第62/520,110号の優先権の利益を主張し、参照によりその全体が本明細書に組み込まれる。
本明細書には、炭化ケイ素繊維上に湿度耐性コーティングを形成するための新たなアプローチが記載される。化学気相反応又はin-situ成長工程と呼び得る新たな方法は、湿度耐性コーティングを形成するための、高温での選択されたガス状前駆体の存在下に炭化ケイ素表面で起こる化学反応に依拠する。
いくつかの実施形態を以下に示す。
項1
炭化ケイ素繊維上に湿度耐性コーティングを形成する方法であって、
窒素を含むガス状N前駆体に炭化ケイ素繊維を高温で曝露し、これにより炭化ケイ素繊維の表面領域中に窒素を導入するステップ;及び
ホウ素を含むガス状B前駆体に炭化ケイ素繊維を高温で曝露し、これにより炭化ケイ素繊維の表面領域中にホウ素を導入するステップ
を含み、
ここで、ケイ素ドープされた窒化ホウ素は、Siを含むガス状Si前駆体に炭化ケイ素繊維を曝露することなく、炭化ケイ素繊維の表面領域に形成され、これによりケイ素ドープされた窒化ホウ素を含む湿度耐性コーティングを炭化ケイ素繊維上にin-situで成長させる、方法。
項2
ガス状N前駆体に対する炭化ケイ素繊維の曝露を、ガス状B前駆体に対する炭化ケイ素繊維の曝露の前に行う、項1に記載の方法。
項3
ガス状B前駆体に対する炭化ケイ素繊維の曝露を、ガス状N前駆体に対する炭化ケイ素繊維の曝露の前に行う、項1に記載の方法。
項4
ガス状N前駆体に対する炭化ケイ素繊維の曝露を、ガス状B前駆体に対する炭化ケイ素繊維の曝露と同時に行う、項1に記載の方法。
項5
ガス状N前駆体が、アンモニア、窒素ガス(N 2 )、及びヒドラジンガスからなる群から選択される、項1に記載の方法。
項6
ガス状B前駆体が、ホウ素含有水素化物、ホウ素含有ハロゲン化物、又はホウ素含有酸化物を含む、項1に記載の方法。
項7
ホウ素含有水素化物、ホウ素含有ハロゲン化物、又はホウ素含有酸化物が、三塩化ホウ素ガス、三フッ化ホウ素ガス、及び酸化ホウ素ガスからなる群から選択される、項6に記載の方法。
項8
ガス状N前駆体に対する炭化ケイ素繊維の曝露を行う高温が、約1200℃~約1800℃の範囲内であり、
ガス状B前駆体に対する炭化ケイ素繊維の曝露を行う高温が、約1200℃~約1800℃の範囲内である、項1に記載の方法。
項9
酸素を含むガス状O前駆体に炭化ケイ素繊維を高温で曝露するステップをさらに含む、項1に記載の方法。
項10
ガス状O前駆体に対する炭化ケイ素繊維の曝露を、ガス状N前駆体に対する炭化ケイ素繊維の曝露の前、及び/又はガス状B前駆体に対する炭化ケイ素繊維の曝露の前に行う、項9に記載の方法。
項11
ガス状O前駆体に対する炭化ケイ素繊維の曝露を行う高温が、約1200℃~約1800℃の範囲内である、項9に記載の方法。
項12
表面領域が、約0.01ミクロン~約0.5ミクロンの範囲内の深さを有し、これにより湿度耐性コーティングが、約0.01ミクロン~約0.5ミクロンの範囲内の厚さを有する、項1に記載の方法。
項13
大気圧又は低大気圧においてガス状N前駆体及び/又はガス状B前駆体を含む1つ以上のチャンバー内で実施される、項1に記載の方法。
項14
チャンバーが、不活性ガス又は真空環境を含む、項13に記載の方法。
項15
ガス状N前駆体及びガス状B前駆体に対する炭化ケイ素繊維の曝露後に、制御環境中で炭化ケイ素繊維を熱処理し、表面領域におけるケイ素ドープされた窒化ホウ素の拡散及び形成を促進するステップをさらに含む、項1に記載の方法。
項16
制御環境が、大気圧又は低大気圧において真空環境又は不活性ガス環境を含む、項15に記載の方法。
項17
連続式工程である、項1に記載の方法。
項18
バッチ式工程である、項1に記載の方法。
項19
炭化ケイ素繊維が、麻くず、一次元テープ、組紐、及び/又は織布の形態に準備された繊維集合体の一部であり、
湿度耐性コーティングが、繊維集合体中の各炭化ケイ素繊維上に形成される、
項1に記載の方法。
項20
以下のステップ:
麻くず、一次元テープ、組紐、及び/又は織布を、それらにセラミックコーティングを適用することにより硬化させ、これにより多孔質繊維プリフォームを形成するステップ; 多孔質繊維プリフォームに、液体担体に分散させたセラミック粒子を含むスラリーを含浸させ、スラリーを乾燥させて液体担体を除去し、セラミック粒子を多孔質繊維プリフォーム中に残し、これにより含浸繊維プリフォームを形成するステップ;及び
含浸繊維プリフォームにケイ素を含む溶融物を含浸させ、これにより溶融物の固化の際に、湿度耐性コーティングを含む炭化ケイ素繊維を含有するセラミックマトリックス複合材料を形成するステップ、
をさらに含む、項19に記載の方法。
Claims (14)
- 炭化ケイ素繊維上に湿度耐性コーティングを形成する方法であって、
輸送チャンバーにより連結された工程チャンバーを提供するステップであって、工程チャンバーの1つが窒素を含むガス状N前駆体により再充填され、工程チャンバーのもう1つがホウ素を含むガス状B前駆体により再充填されるステップ;
工程チャンバーを通して炭化ケイ素繊維を連続送達するステップ;
連続送達の間に、窒素を含むガス状N前駆体に炭化ケイ素繊維を1200℃~1800℃の範囲内の高温で曝露し、これにより炭化ケイ素繊維の表面領域中に窒素を導入するステップ;及び
ホウ素を含むガス状B前駆体に炭化ケイ素繊維を1200℃~1800℃の範囲内の高温で曝露し、これにより炭化ケイ素繊維の表面領域中にホウ素を導入するステップ
を含み、
ここで、ケイ素ドープされた窒化ホウ素は、Siを含むガス状Si前駆体に炭化ケイ素繊維を曝露することなく、炭化ケイ素繊維の表面領域に形成され、これによりケイ素ドープされた窒化ホウ素を含む湿度耐性コーティングを炭化ケイ素繊維上にin-situで成長させる、方法。 - ガス状N前駆体に対する炭化ケイ素繊維の曝露を、ガス状B前駆体に対する炭化ケイ素繊維の曝露の前に行い、ガス状N前駆体により再充填されたその1つの工程チャンバーが、ガス状B前駆体により再充填されたそのもう1つの工程チャンバーの上流にある、請求項1に記載の方法。
- ガス状B前駆体に対する炭化ケイ素繊維の曝露を、ガス状N前駆体に対する炭化ケイ素繊維の曝露の前に行い、ガス状N前駆体により再充填されたその1つの工程チャンバーが、ガス状B前駆体により再充填されたそのもう1つの工程チャンバーの下流にある、請求項1に記載の方法。
- ガス状N前駆体が、アンモニア、窒素ガス(N2)、及びヒドラジンガスからなる群から選択される、請求項1に記載の方法。
- ガス状B前駆体が、ホウ素含有水素化物、ホウ素含有ハロゲン化物、又はホウ素含有酸化物を含む、請求項1に記載の方法。
- ホウ素含有水素化物、ホウ素含有ハロゲン化物、又はホウ素含有酸化物が、三塩化ホウ素ガス、三フッ化ホウ素ガス、及び酸化ホウ素ガスからなる群から選択される、請求項5に記載の方法。
- 酸素を含むガス状O前駆体に炭化ケイ素繊維を1200℃~1800℃の範囲内の高温で曝露するステップをさらに含む、請求項1に記載の方法。
- ガス状O前駆体に対する炭化ケイ素繊維の曝露を、ガス状N前駆体に対する炭化ケイ素繊維の曝露の前、及び/又はガス状B前駆体に対する炭化ケイ素繊維の曝露の前に行う、請求項7に記載の方法。
- 表面領域が、0.01ミクロン~0.5ミクロンの範囲内の深さを有し、これにより湿度耐性コーティングが、0.01ミクロン~0.5ミクロンの範囲内の厚さを有する、請求項1に記載の方法。
- ガス状N前駆体及びガス状B前駆体を含む工程チャンバーが、大気圧又は低大気圧である、請求項1に記載の方法。
- ガス状N前駆体及びガス状B前駆体に対する炭化ケイ素繊維の曝露後に、制御環境中で炭化ケイ素繊維を熱処理し、表面領域におけるケイ素ドープされた窒化ホウ素の拡散及び形成を促進するステップをさらに含む、請求項1に記載の方法。
- 制御環境が、大気圧又は低大気圧において真空環境又は不活性ガス環境を含む、請求項11に記載の方法。
- 炭化ケイ素繊維が、麻くず、テープ、組紐、及び/又は織布の形態に準備された繊維集合体の一部であり、
湿度耐性コーティングが、繊維集合体中の各炭化ケイ素繊維上に形成される、
請求項1に記載の方法。 - 以下のステップ:
麻くず、テープ、組紐、及び/又は織布を、それらにセラミックコーティングを適用することにより硬化させ、これにより多孔質繊維プリフォームを形成するステップ;
多孔質繊維プリフォームに、液体担体に分散させたセラミック粒子を含むスラリーを含浸させ、スラリーを乾燥させて液体担体を除去し、セラミック粒子を多孔質繊維プリフォーム中に残し、これにより含浸繊維プリフォームを形成するステップ;及び
含浸繊維プリフォームにケイ素を含む溶融物を含浸させ、これにより溶融物の固化の際に、湿度耐性コーティングを含む炭化ケイ素繊維を含有するセラミックマトリックス複合材料を形成するステップ、
をさらに含む、請求項13に記載の方法。
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