TW202122364A - 用碳化矽基質生產板狀模製品的方法 - Google Patents
用碳化矽基質生產板狀模製品的方法 Download PDFInfo
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Abstract
一種用摻入纖維的碳化矽基質製造板狀模製品的方法,所述纖維有助於構造較鬆散的結構並且還有助於提高所述模製品的機械穩定性,所述方法包括首先在減壓下或在惰性氣體(例如氬氣)的氣氛中,將用於摻入的纖維在500o
C至1500o
C(較佳600o
C至1200o
C)的溫度下進行熱解,將如此處理過的纖維用矽酸酯或細粒二氧化矽塗覆,然後在900o
C至1300o
C下進行熱處理,其中存在於纖維表面的二氧化矽被轉化為碳化矽層,然後將如此塗覆的纖維與黏合劑、具有不同粒子尺寸的矽及碳化矽粉末摻混並均勻混合,將所得混合物引入到用於該目的的模具中,並在約130o
C至180o
C下固化以得到模製品,以及使固化的模製品在800o
C至1200o
C下熱解,並在800至1200o
C下將模製品進行氣相蝕刻。
Description
本發明的主題是一種用於生產纖維增強的多孔碳化矽模製品的方法。
通常透過在CVD反應器中,通常在單晶圓反應器中進行CVD(化學氣相沉積)來完成在半導體晶圓的正面上磊晶層的沉積。例如可以提及US 2014 0 251 208 A1,其描述了這種CVD反應器。由單晶圓反應器在上圓頂及下圓頂之間提供反應室,在該反應室中,透過基座支撐銷上的基座支撐軸的基座支撐臂固定基座。
基座及放置在其上的半導體晶圓透過佈置在所述圓頂上方及下方的燈陣列的熱輻射被加熱,同時沉積氣體被引導穿過半導體晶圓的面對上圓頂的正面。
專利說明書WO 19 110 386 A1公開了基座的一部分由纖維增強的多孔碳化矽模製品製成。
專利說明書US 4 275 095 A描述了一種製造材料(纖維增強的多孔碳化矽模製品)的方法,該材料特別適合在高溫、腐蝕性及侵蝕性的環境中使用,其包括碳纖維基板,該碳纖維基板包括圍繞基板的每根纖維形成的熱解碳殼;基板的塗覆纖維上的碳化物一致性塗層;金屬碳化物的不可滲透的外部保護層,該外部保護層圍繞塗覆的基板的整個周邊形成。根據所公開的方法,以一種方式將彈性金屬塗層施加到纖維上,使得由於纖維基板和塗層的熱膨脹係數之間的差異而在基板中產生的所有機械應力被有效地吸收。
專利說明書US 5 403 401 A描述了一種由纖維增強的多孔碳化矽模製品構成的平坦基板承載件,其包括用於支撐待處理的基板的經加工主表面,與該主表面相對的表面以及周圍塗層。為了在處理之後從主表面去除經處理的基板,可能已經對主表面進行機械加工。相對的表面已經過處理,以基本補償在這兩個表面上的機械應力。
專利說明書EP 0 643 024 A2描述了一種纖維增強的多孔碳化矽模製品以及一種用於製造所述模製品的方法,其中,用於增強的纖維首先在500o
C至1500o
C(較佳600o
C至1200o
C)的溫度下在減壓或在惰性氣體(例如氬氣)的氣氛中進行熱解,將如此處理的纖維用矽酸酯或細粒二氧化矽塗覆,然後在900o
C至1300°C下進行熱處理,纖維表面上的二氧化矽被轉化為碳化矽層,然後將如此塗覆的纖維與黏合劑、具有不同粒徑(particle size)的矽粉及碳化矽粉均勻混合,將所得混合物引入到用於該目的的模具中,並在約130o
C至180o
C下固化,並且經固化的模製品在800o
C至1200o
C下進行熱解。
專利說明書US 2004 266 181 A描述了一種用於半導體晶圓的基座,該基座在透過化學氣相沉積在半導體晶圓的正面上沉積層的過程中被應用,並且具有透氣性結構,其孔隙率為至少15%,密度為0.5至1.5 g/cm3
。
專利說明書US 2005 244 581 A示出了一種用於製造由不可滲透的熱結構複合材料製成的部件的方法,該方法包括形成包括至少一種耐火纖維的纖維增強材料的多孔基板,以及透過碳的第一相及碳化矽的第二相對增強材料進行緻密化。然後透過用基於熔融矽的組合物浸漬多孔基板來繼續該方法,以填充基板的孔。
專利說明書US 2009 272 318 A描述了一種用於在半導體部件的生產期間支撐基板的裝置,該裝置包括具有頂面的基本平坦的板,可以在該頂面上放置基板。該發明還涉及一種用於製造這種裝置的方法。其發明目的是提供一種裝置,該裝置便宜並且構造簡單,但是還允許製程氣體在限定的生產條件下沿基板方向通過,例如用於向基板供應惰性氣體或用於將該基板放置在氣墊上。根據該發明,所述板的頂面至少是部分多孔的。因此,先前技術通常對裝置進行昂貴、不便且極其精確地機械加工係不需要的,從而可以實質上更有利的成本來生產該裝置。問題描述
原則上證明,由纖維增強的多孔碳化矽模製品製成的基座對於半導體晶圓的磊晶生長而言具有很高的優勢,當關心的是例如,在pp+基板的情況下要避免被稱為自動摻雜的現象。自動摻雜是指在CVD沉積期間氣體從半導體晶圓的背面向正面的不需要的擴散(反之亦然)。如果在磊晶生長中已經將所使用的沉積氣體與相對高濃度的摻雜劑混合,如在例如所謂的pp+基板的情況那樣,則自動摻雜效應特別大。
使用纖維增強的多孔碳化矽模製品的第二個優點是,可以將半導體晶圓更有效地放置在基座上,並且防止浮起現象,即由於熱膨脹而引起的半導體晶圓的移動。
儘管在磊晶生長中使用纖維增強的多孔碳化矽模製品具有優勢,但是這種材料在磊晶生長反應器中使用的長期穩定性仍然不足。已經顯示出,所使用的由纖維增強的多孔碳化矽模製品製造的部件在越來越大程度上是沉積在半導體晶圓上以及其他地方的顆粒來源,並且引起相當大的幾何學問題,這意味著半導體晶圓不得不被收回而不適合進一步加工。
本發明的一個目的是提供一種用於生產磊晶生長用基座的改性材料。另一個目的是提供一種生產用於生產磊晶生長用基座的改性材料的方法。
實現
本發明的目的透過申請專利範圍中描述的方法來實現。
關於本發明的方法的上述實施態樣指示的特徵可以轉換到本發明的產品上。相反,針對本發明產品的上述實施態樣指示的特徵可以轉換到本發明的方法上。在附圖描述及申請專利範圍中闡明了本發明的實施態樣的這些及其他特徵。各特徵可以單獨地或組合地實現為本發明的實施態樣。此外,它們可以描述可獨立保護的有利實施態樣。
利用本發明的方法,可以在適用於磊晶生長的反應器中使用具有高穩定性的纖維增強的多孔碳化矽模製品,而沒有所述缺點。
所述模製品基本上由摻有纖維的碳化矽基質組成。根據本發明,這裡設想將天然纖維摻入到碳化矽基質中。這些天然纖維也可以是長莖草及/或穀類植物的莖的纖維。作為天然纖維,使用劍麻及/或黃麻或者棉及/或黏膠纖維之纖維也可能是有利的。
根據本發明的模製品的一個較佳實施態樣,用於摻入的纖維可以是織造織物的形式,其被摻入到碳化矽基質中。
較佳地,用於摻入的纖維沿擇優方向(preferential direction)排列。
較佳地,用於摻入的纖維沿彼此垂直的兩個擇優方向排列。
首先,將要摻入的纖維在減壓下或在惰性氣體(例如氬氣)的氣氛中,在500o
C至1500o
C(較佳600o
C至1200o
C)的溫度下進行熱解。如此處理過的纖維隨後用矽酸酯或細粒二氧化矽塗覆,然後將它們在900o
C至1300o
C下進行熱處理,其中纖維表面上的二氧化矽轉化為碳化矽層。
隨後將如此塗覆的纖維與黏合劑、具有不同粒子尺寸(grain size)的矽及碳化矽粉末摻混,並均勻地混合。
將由此獲得的混合物引入到用於該目的的模具中,並在約130o
C至180o
C下固化以得到模製品。
較佳地,在模製品乾燥之後,提供黏合劑、具有不同粒子尺寸的矽及碳化矽粉末的另一層,隨後在130o
C至180o
C下固化。
乾燥的模製品在800o
C至1200o
C下進行熱解。
隨後將模製品在800至1200o
C下進行氣相蝕刻。
所述氣相蝕刻較佳包含HCl作為蝕刻氣體。
蝕刻較佳進行超過一小時。
該蝕刻較佳在也適合於磊晶生長的系統中進行。
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Claims (5)
- 一種用摻入纖維的碳化矽基質製造板狀模製品的方法,該纖維有助於構造較鬆散的結構並且有助於提高該模製品的機械穩定性,該方法包括: 首先在減壓下或在惰性氣體的氣氛中,將用於摻入的纖維在500o C至1500o C的溫度下進行熱解, 將如此處理過的纖維用矽酸酯或細粒二氧化矽塗覆,隨後在900o C至1300o C下進行熱處理,其中存在於纖維表面的二氧化矽被轉化為碳化矽層, 然後將如此塗覆的纖維與黏合劑、具有不同粒子尺寸的矽及碳化矽粉末摻混並均勻混合, 將所得混合物引入到用於該目的的模具中,並在約130o C至180o C下固化以得到模製品,以及 使固化的模製品在800o C至1200o C下熱解, 並在800至1200o C下將模製品進行氣相蝕刻。
- 根據請求項1所述的方法,其中,該纖維沿擇優方向排列。
- 根據請求項1或2所述的方法,其中,該纖維沿彼此垂直的兩個擇優方向排列。
- 根據請求項1或2所述的方法,其中,該模製品在乾燥之後設置黏合劑、具有不同粒子尺寸的矽及碳化矽粉末的一層,該層隨後在130o C至180o C下固化。
- 根據請求項1或2所述的方法,其中,該模製品在適合於磊晶生長的系統中被蝕刻。
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EP19216106 | 2019-12-13 | ||
EP19216106.5A EP3835281A1 (de) | 2019-12-13 | 2019-12-13 | Verfahren zur herstellung eines plattenförmigen formkörpers mit einer siliziumkarbid-matrix |
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TW202122364A true TW202122364A (zh) | 2021-06-16 |
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TW109141963A TW202122364A (zh) | 2019-12-13 | 2020-11-30 | 用碳化矽基質生產板狀模製品的方法 |
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EP (1) | EP3835281A1 (zh) |
TW (1) | TW202122364A (zh) |
WO (1) | WO2021115783A1 (zh) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US4275095A (en) | 1979-07-31 | 1981-06-23 | Warren Consultants, Inc. | Composite article and method of making same |
NL9300389A (nl) | 1993-03-04 | 1994-10-03 | Xycarb Bv | Substraatdrager. |
DE4331305C2 (de) | 1993-09-15 | 2002-07-11 | Harald Lorson | Verfahren zur Herstellung eines porösen Formkörpers aus Siliciumcarbid |
DE10132505C2 (de) * | 2001-07-05 | 2003-07-03 | Wacker Chemie Gmbh | Keramischer Formkörper aus Siliciumcarbid, Verfahren zu seiner Herstellung und seine Verwendung |
DE10328842B4 (de) | 2003-06-26 | 2007-03-01 | Siltronic Ag | Suszeptor für eine chemische Gasphasenabscheidung, Verfahren zur Bearbeitung einer Halbleiterscheibe durch chemische Gasphasenabscheidung und nach dem Verfahren bearbeitete Halbleiterscheibe |
FR2869609B1 (fr) | 2004-05-03 | 2006-07-28 | Snecma Propulsion Solide Sa | Procede de fabrication d'une piece en materiau composite thermostructural |
NL1028867C2 (nl) | 2005-04-26 | 2006-10-27 | Xycarb Ceramics B V | Inrichting voor het ondersteunen van een substraat alsmede een werkwijze voor het vervaardigen van een dergelijke inrichting. |
US9123765B2 (en) | 2013-03-11 | 2015-09-01 | Applied Materials, Inc. | Susceptor support shaft for improved wafer temperature uniformity and process repeatability |
DE102017222279A1 (de) | 2017-12-08 | 2019-06-13 | Siltronic Ag | Verfahren zum Abscheiden einer epitaktischen Schicht auf einer Vorderseite einer Halbleiterscheibe und Vorrichtung zur Durchführung des Verfahrens |
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- 2019-12-13 EP EP19216106.5A patent/EP3835281A1/de not_active Withdrawn
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EP3835281A1 (de) | 2021-06-16 |
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