JP7122907B2 - 昇降装置、半導体製造装置の組立装置、半導体製造装置の組立方法 - Google Patents
昇降装置、半導体製造装置の組立装置、半導体製造装置の組立方法 Download PDFInfo
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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Description
最初に、一実施形態に係る組立装置を用いて組み立てることが可能な縦型熱処理装置の構成例について説明する。以下では、二重管構造の縦型熱処理装置を説明するが、一重管構造の縦型熱処理装置であってもよい。図1は、縦型熱処理装置の構成例を示す縦断面図である。図2は、縦型熱処理装置の構成例を示す横断面図である。
一実施形態に係る組立装置は、多数枚のウエハに対して一括で熱処理を行うバッチ式の縦型熱処理装置の複数の構成部品を取り付けて反応管ユニットを組み立てる装置である。構成部品は、例えば反応管、ガス導入管、熱電対等である。反応管は、一重管構造であってもよく、内管及び外管を有する二重管構造であってもよい。一実施形態に係る組立装置によれば、縦型熱処理装置の設置場所とは異なる場所で反応管ユニットを組み立てることができるので、作業スペースを確保しやすい。これにより、複数の作業者が同時に反応管ユニットの組立作業を行うことができるので、縦型熱処理装置の組立工期を短縮できる。また、複数の作業者が同時に反応管ユニットのメンテナンスを行うことができるので、縦型熱処理装置のダウンタイムを低減できる。
次に、昇降機構130について詳細に説明する。図5は、昇降機構130の構成例を示す図である。図5においては、保持部132b,133b及び傾き調節機構134の図示を省略している。図6から図8は、図5の昇降機構130の第1昇降部132を説明するための図である。図6は、昇降機構130における第1昇降部132の駆動機構を説明するための図である。図7は、昇降機構130におけるガイド部131及び第1昇降部132を組立装置100の後面の側から見たときの図である。図8は、昇降機構130におけるガイド部131及び第1昇降部132を組立装置100の右側面の側から見たときの図である。
一実施形態に係る半導体製造装置の組立方法について、上記の組立装置100を用いて二重管構造の縦型熱処理装置の反応管ユニットを組み立てる場合を例に挙げて説明する。図9は、半導体製造装置の組立方法の一例を示すフローチャートである。
130 昇降機構
131 ガイド部
131d ねじ軸
131f,131g レール
132 第1昇降部
132c ナット
132d,132e ブロック
132g エアクランパ
133 第2昇降部
135 第1駆動部
135a 減速機付モータ
135c 伝動機構
135d ベルト切れセンサ
135f,135e プーリー
135g タイミングベルト
136 第2駆動部
137 衝突防止機構
150 ガス供給機構
160 排気機構
Claims (13)
- 下部に開口を有し、内管及び外管の二重管構造を有する反応管を備える半導体製造装置の組立装置が有する昇降装置であって、
上下方向に延びる軸部と、
前記軸部に昇降自在に取り付けられ、前記外管を保持する第1昇降部と、
前記第1昇降部を昇降させる第1駆動部と、
前記第1昇降部よりも下方において前記軸部に昇降自在に取り付けられ、前記内管を保持する第2昇降部と、
前記第2昇降部を昇降させる第2駆動部と、
を有する、
昇降装置。 - 前記軸部はねじ軸であり、
前記第1昇降部は、前記ねじ軸に螺合する第1ナットを含み、
前記第2昇降部は、前記ねじ軸に螺合する第2ナットを含む、
請求項1に記載の昇降装置。 - 前記第1駆動部は、前記第1ナットを回転させることにより前記第1昇降部を昇降させ、
前記第2駆動部は、前記第2ナットを回転させることにより前記第2昇降部を昇降させる、
請求項2に記載の昇降装置。 - 前記第1駆動部及び前記第2駆動部は、それぞれ前記第1昇降部及び前記第2昇降部と共に昇降する、
請求項1乃至3のいずれか一項に記載の昇降装置。 - 前記第1昇降部及び前記第2昇降部の前記軸部に対する移動をガイドするリニアガイドを有する、
請求項1乃至4のいずれか一項に記載の昇降装置。 - 前記第1駆動部及び前記第2駆動部は、それぞれ回転軸が前記軸部と垂直に配置されたモータであり、
前記モータの回転力を前記第1駆動部及び前記第2駆動部に伝える伝動機構を有する、
請求項1乃至5のいずれか一項に記載の昇降装置。 - 前記伝動機構は、プーリーとベルトとを含む、
請求項6に記載の昇降装置。 - 前記ベルトの破損を検出するセンサを有し、
前記センサが前記ベルトの破損を検出すると、前記軸部に対する前記第1昇降部及び前記第2昇降部の動作をロックするロック機構を有する、
請求項7に記載の昇降装置。 - 前記ロック機構は、エアクランパである、
請求項8に記載の昇降装置。 - 前記モータは、アブソリュート型である、
請求項6乃至8のいずれか一項に記載の昇降装置。 - 前記第1昇降部と前記第2昇降部との接触を防止する衝突防止機構を有する、
請求項1乃至10のいずれか一項に記載の昇降装置。 - 下部に開口を有し、内管及び外管の二重管構造を有する反応管を備える半導体製造装置の組立装置であって、
本体と、
前記本体に取り付けられた昇降装置と、
前記反応管の内部にガスを供給するガス供給機構と、
前記反応管の内部を排気する排気機構と、
を有し、
前記昇降装置は、
上下方向に延びる軸部と、
前記軸部に昇降自在に取り付けられ、前記外管を保持する第1昇降部と、
前記第1昇降部を昇降させる第1駆動部と、
前記第1昇降部よりも下方において前記軸部に昇降自在に取り付けられ、前記内管を保持する第2昇降部と、
前記第2昇降部を昇降させる第2駆動部と、
を有する、
半導体製造装置の組立装置。 - 下部に開口を有し、内管及び外管の二重管構造を有する反応管を備える半導体製造装置の組立方法であって、
上下方向に延びる軸部に昇降自在に取り付けられた第1昇降部により前記外管を保持して上昇させる工程と、
前記第1昇降部よりも下方において前記軸部に昇降自在に取り付けられた第2昇降部により前記内管を保持して上昇させることにより、前記外管の内部に前記内管を設置する工程と、
を有する、
半導体製造装置の組立方法。
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JP2018156854A JP7122907B2 (ja) | 2018-08-24 | 2018-08-24 | 昇降装置、半導体製造装置の組立装置、半導体製造装置の組立方法 |
KR1020190098287A KR102505162B1 (ko) | 2018-08-24 | 2019-08-12 | 승강 장치, 반도체 제조 장치의 조립 장치, 반도체 제조 장치의 조립 방법 |
CN201910773338.3A CN110858560A (zh) | 2018-08-24 | 2019-08-21 | 升降装置、半导体制造装置的组装装置及其组装方法 |
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JP2018156854A JP7122907B2 (ja) | 2018-08-24 | 2018-08-24 | 昇降装置、半導体製造装置の組立装置、半導体製造装置の組立方法 |
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US20200340116A1 (en) * | 2019-04-26 | 2020-10-29 | Tokyo Electron Limited | Heat treatment apparatus, heat treatment method, and film forming method |
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JP2011146412A (ja) | 2010-01-12 | 2011-07-28 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2012186355A (ja) | 2011-03-07 | 2012-09-27 | Sharp Corp | 昇降機構を有する気相成長装置 |
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JP3056243B2 (ja) | 1990-11-30 | 2000-06-26 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
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JP2003243311A (ja) | 2002-02-18 | 2003-08-29 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2010272667A (ja) | 2009-05-21 | 2010-12-02 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2011146412A (ja) | 2010-01-12 | 2011-07-28 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2012186355A (ja) | 2011-03-07 | 2012-09-27 | Sharp Corp | 昇降機構を有する気相成長装置 |
Cited By (2)
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US20200340116A1 (en) * | 2019-04-26 | 2020-10-29 | Tokyo Electron Limited | Heat treatment apparatus, heat treatment method, and film forming method |
US11784070B2 (en) * | 2019-04-26 | 2023-10-10 | Tokyo Electron Limited | Heat treatment apparatus, heat treatment method, and film forming method |
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