JP7098690B2 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

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Publication number
JP7098690B2
JP7098690B2 JP2020157401A JP2020157401A JP7098690B2 JP 7098690 B2 JP7098690 B2 JP 7098690B2 JP 2020157401 A JP2020157401 A JP 2020157401A JP 2020157401 A JP2020157401 A JP 2020157401A JP 7098690 B2 JP7098690 B2 JP 7098690B2
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Japan
Prior art keywords
manifold
tube
pressure
substrate processing
space
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JP2020157401A
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English (en)
Japanese (ja)
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JP2021170627A (ja
Inventor
スンソブ イ
ジョンリン ソン
ジュホ キム
キョン パク
ジュソブ キム
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Wonik IPS Co Ltd
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Wonik IPS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020200045300A external-priority patent/KR102679831B1/ko
Priority claimed from KR1020200045299A external-priority patent/KR102810691B1/ko
Priority claimed from KR1020200045301A external-priority patent/KR102812814B1/ko
Priority claimed from KR1020200045298A external-priority patent/KR20210127438A/ko
Priority claimed from KR1020200045303A external-priority patent/KR102783207B1/ko
Application filed by Wonik IPS Co Ltd filed Critical Wonik IPS Co Ltd
Publication of JP2021170627A publication Critical patent/JP2021170627A/ja
Priority to JP2022078094A priority Critical patent/JP7428748B2/ja
Application granted granted Critical
Publication of JP7098690B2 publication Critical patent/JP7098690B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/30—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages
    • B05B1/32—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages in which a valve member forms part of the outlet opening
    • B05B1/323—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages in which a valve member forms part of the outlet opening the valve member being actuated by the pressure of the fluid to be sprayed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B11/00—Single-unit hand-held apparatus in which flow of contents is produced by the muscular force of the operator at the moment of use
    • B05B11/0005—Components or details
    • B05B11/0037—Containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B11/00—Single-unit hand-held apparatus in which flow of contents is produced by the muscular force of the operator at the moment of use
    • B05B11/0005—Components or details
    • B05B11/0037—Containers
    • B05B11/0039—Containers associated with means for compensating the pressure difference between the ambient pressure and the pressure inside the container, e.g. pressure relief means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Polarising Elements (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2020157401A 2020-04-14 2020-09-18 基板処理装置 Active JP7098690B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022078094A JP7428748B2 (ja) 2020-04-14 2022-05-11 基板処理装置

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
KR1020200045300A KR102679831B1 (ko) 2020-04-14 2020-04-14 기판 처리 장치
KR1020200045299A KR102810691B1 (ko) 2020-04-14 2020-04-14 기판 처리 장치
KR1020200045301A KR102812814B1 (ko) 2020-04-14 2020-04-14 기판 처리 장치
KR10-2020-0045301 2020-04-14
KR10-2020-0045300 2020-04-14
KR10-2020-0045303 2020-04-14
KR10-2020-0045298 2020-04-14
KR1020200045298A KR20210127438A (ko) 2020-04-14 2020-04-14 기판 처리 장치
KR10-2020-0045299 2020-04-14
KR1020200045303A KR102783207B1 (ko) 2020-04-14 2020-04-14 기판 처리 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022078094A Division JP7428748B2 (ja) 2020-04-14 2022-05-11 基板処理装置

Publications (2)

Publication Number Publication Date
JP2021170627A JP2021170627A (ja) 2021-10-28
JP7098690B2 true JP7098690B2 (ja) 2022-07-11

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JP2020157401A Active JP7098690B2 (ja) 2020-04-14 2020-09-18 基板処理装置
JP2020157360A Active JP7024029B2 (ja) 2020-04-14 2020-09-18 基板処理装置
JP2022018899A Active JP7451579B2 (ja) 2020-04-14 2022-02-09 基板処理装置
JP2022078094A Active JP7428748B2 (ja) 2020-04-14 2022-05-11 基板処理装置

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JP2020157360A Active JP7024029B2 (ja) 2020-04-14 2020-09-18 基板処理装置
JP2022018899A Active JP7451579B2 (ja) 2020-04-14 2022-02-09 基板処理装置
JP2022078094A Active JP7428748B2 (ja) 2020-04-14 2022-05-11 基板処理装置

Country Status (4)

Country Link
US (2) US20210317575A1 (https=)
JP (4) JP7098690B2 (https=)
CN (3) CN113539880A (https=)
TW (4) TWI829276B (https=)

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Publication number Priority date Publication date Assignee Title
KR102868615B1 (ko) * 2021-04-02 2025-10-10 주식회사 원익아이피에스 기판처리방법
KR102452714B1 (ko) * 2021-12-23 2022-10-07 주식회사 에이치피에스피 고압 및 진공공정 병행 챔버장치
KR102594464B1 (ko) * 2022-09-16 2023-11-29 주식회사 에이치피에스피 고압 열처리 장치
KR102700352B1 (ko) * 2023-08-10 2024-08-30 주식회사 에이치피에스피 고압 기판 처리 장치
CN118007107B (zh) * 2024-04-09 2024-06-14 北京凯德石英股份有限公司 一种工艺管

Citations (6)

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Publication number Priority date Publication date Assignee Title
JP2001267255A (ja) 2000-03-21 2001-09-28 Nec Corp 気相成長装置及び気相成長方法
JP2002353153A (ja) 2001-03-05 2002-12-06 Tokyo Electron Ltd 熱処理方法及び熱処理装置
JP2004063485A (ja) 2002-07-24 2004-02-26 Hitachi Kokusai Electric Inc 半導体製造装置
WO2004075272A1 (ja) 2003-02-21 2004-09-02 Hitachi Kokusai Electric Inc. 基板処理装置及び半導体デバイスの製造方法
JP2009059872A (ja) 2007-08-31 2009-03-19 Sharp Corp 半導体製造装置
JP2009117798A (ja) 2007-10-19 2009-05-28 Hitachi Kokusai Electric Inc 温度制御方法、温度補正値取得方法、半導体製造方法、基板処理装置

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Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267255A (ja) 2000-03-21 2001-09-28 Nec Corp 気相成長装置及び気相成長方法
JP2002353153A (ja) 2001-03-05 2002-12-06 Tokyo Electron Ltd 熱処理方法及び熱処理装置
JP2004063485A (ja) 2002-07-24 2004-02-26 Hitachi Kokusai Electric Inc 半導体製造装置
WO2004075272A1 (ja) 2003-02-21 2004-09-02 Hitachi Kokusai Electric Inc. 基板処理装置及び半導体デバイスの製造方法
JP2009059872A (ja) 2007-08-31 2009-03-19 Sharp Corp 半導体製造装置
JP2009117798A (ja) 2007-10-19 2009-05-28 Hitachi Kokusai Electric Inc 温度制御方法、温度補正値取得方法、半導体製造方法、基板処理装置

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Publication number Publication date
CN113539881A (zh) 2021-10-22
US20210317574A1 (en) 2021-10-14
CN113539880A (zh) 2021-10-22
TW202138612A (zh) 2021-10-16
CN120072707A (zh) 2025-05-30
TWI764286B (zh) 2022-05-11
JP7428748B2 (ja) 2024-02-06
CN113539881B (zh) 2025-05-20
JP7451579B2 (ja) 2024-03-18
JP2022065055A (ja) 2022-04-26
TWI777249B (zh) 2022-09-11
TWI829276B (zh) 2024-01-11
JP2021170626A (ja) 2021-10-28
TW202246568A (zh) 2022-12-01
JP2021170627A (ja) 2021-10-28
US20210317575A1 (en) 2021-10-14
TW202138611A (zh) 2021-10-16
TW202244314A (zh) 2022-11-16
JP7024029B2 (ja) 2022-02-22
JP2022117984A (ja) 2022-08-12
TWI829275B (zh) 2024-01-11

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