CN113539880A - 基板处理装置 - Google Patents

基板处理装置 Download PDF

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Publication number
CN113539880A
CN113539880A CN202010993998.5A CN202010993998A CN113539880A CN 113539880 A CN113539880 A CN 113539880A CN 202010993998 A CN202010993998 A CN 202010993998A CN 113539880 A CN113539880 A CN 113539880A
Authority
CN
China
Prior art keywords
pressure
external
exhaust
internal
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010993998.5A
Other languages
English (en)
Chinese (zh)
Inventor
李承燮
孙贞琳
金周浩
朴坰
金周燮
金颍俊
金丙祚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wonik IPS Co Ltd
Original Assignee
Wonik IPS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020200045300A external-priority patent/KR102679831B1/ko
Priority claimed from KR1020200045299A external-priority patent/KR102810691B1/ko
Priority claimed from KR1020200045301A external-priority patent/KR102812814B1/ko
Priority claimed from KR1020200045298A external-priority patent/KR20210127438A/ko
Priority claimed from KR1020200045303A external-priority patent/KR102783207B1/ko
Application filed by Wonik IPS Co Ltd filed Critical Wonik IPS Co Ltd
Publication of CN113539880A publication Critical patent/CN113539880A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/30—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages
    • B05B1/32—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages in which a valve member forms part of the outlet opening
    • B05B1/323—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages in which a valve member forms part of the outlet opening the valve member being actuated by the pressure of the fluid to be sprayed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B11/00—Single-unit hand-held apparatus in which flow of contents is produced by the muscular force of the operator at the moment of use
    • B05B11/0005—Components or details
    • B05B11/0037—Containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B11/00—Single-unit hand-held apparatus in which flow of contents is produced by the muscular force of the operator at the moment of use
    • B05B11/0005—Components or details
    • B05B11/0037—Containers
    • B05B11/0039—Containers associated with means for compensating the pressure difference between the ambient pressure and the pressure inside the container, e.g. pressure relief means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Polarising Elements (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN202010993998.5A 2020-04-14 2020-09-21 基板处理装置 Pending CN113539880A (zh)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
KR1020200045300A KR102679831B1 (ko) 2020-04-14 2020-04-14 기판 처리 장치
KR1020200045299A KR102810691B1 (ko) 2020-04-14 2020-04-14 기판 처리 장치
KR1020200045301A KR102812814B1 (ko) 2020-04-14 2020-04-14 기판 처리 장치
KR10-2020-0045301 2020-04-14
KR10-2020-0045300 2020-04-14
KR10-2020-0045303 2020-04-14
KR10-2020-0045298 2020-04-14
KR1020200045298A KR20210127438A (ko) 2020-04-14 2020-04-14 기판 처리 장치
KR10-2020-0045299 2020-04-14
KR1020200045303A KR102783207B1 (ko) 2020-04-14 2020-04-14 기판 처리 장치

Publications (1)

Publication Number Publication Date
CN113539880A true CN113539880A (zh) 2021-10-22

Family

ID=78006101

Family Applications (3)

Application Number Title Priority Date Filing Date
CN202010993998.5A Pending CN113539880A (zh) 2020-04-14 2020-09-21 基板处理装置
CN202010994498.3A Active CN113539881B (zh) 2020-04-14 2020-09-21 基板处理装置
CN202510225350.6A Pending CN120072707A (zh) 2020-04-14 2020-09-21 基板处理装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN202010994498.3A Active CN113539881B (zh) 2020-04-14 2020-09-21 基板处理装置
CN202510225350.6A Pending CN120072707A (zh) 2020-04-14 2020-09-21 基板处理装置

Country Status (4)

Country Link
US (2) US20210317575A1 (https=)
JP (4) JP7098690B2 (https=)
CN (3) CN113539880A (https=)
TW (4) TWI829276B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102868615B1 (ko) * 2021-04-02 2025-10-10 주식회사 원익아이피에스 기판처리방법
KR102452714B1 (ko) * 2021-12-23 2022-10-07 주식회사 에이치피에스피 고압 및 진공공정 병행 챔버장치
KR102594464B1 (ko) * 2022-09-16 2023-11-29 주식회사 에이치피에스피 고압 열처리 장치
KR102700352B1 (ko) * 2023-08-10 2024-08-30 주식회사 에이치피에스피 고압 기판 처리 장치
CN118007107B (zh) * 2024-04-09 2024-06-14 北京凯德石英股份有限公司 一种工艺管

Citations (4)

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JPH01106423A (ja) * 1987-10-20 1989-04-24 Tel Sagami Ltd 縦型熱処理炉
US20120052457A1 (en) * 2010-08-27 2012-03-01 Tokyo Electron Limited Thermal processing apparatus
US20170087606A1 (en) * 2015-09-28 2017-03-30 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KR20200031798A (ko) * 2018-09-17 2020-03-25 주식회사 원익아이피에스 웨이퍼 공정용 리액터의 가스 제어 장치

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JP6749268B2 (ja) * 2017-03-07 2020-09-02 東京エレクトロン株式会社 基板処理装置
JP6615153B2 (ja) 2017-06-16 2019-12-04 東京エレクトロン株式会社 基板処理装置、基板載置機構、および基板処理方法
JP6820816B2 (ja) * 2017-09-26 2021-01-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、反応管、半導体装置の製造方法、及びプログラム
JP6916766B2 (ja) * 2018-08-27 2021-08-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置及び半導体装置の製造方法
KR102431930B1 (ko) * 2018-09-11 2022-08-12 주식회사 원익아이피에스 웨이퍼 공정용 리액터

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01106423A (ja) * 1987-10-20 1989-04-24 Tel Sagami Ltd 縦型熱処理炉
US20120052457A1 (en) * 2010-08-27 2012-03-01 Tokyo Electron Limited Thermal processing apparatus
US20170087606A1 (en) * 2015-09-28 2017-03-30 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KR20200031798A (ko) * 2018-09-17 2020-03-25 주식회사 원익아이피에스 웨이퍼 공정용 리액터의 가스 제어 장치

Also Published As

Publication number Publication date
CN113539881A (zh) 2021-10-22
US20210317574A1 (en) 2021-10-14
TW202138612A (zh) 2021-10-16
CN120072707A (zh) 2025-05-30
TWI764286B (zh) 2022-05-11
JP7428748B2 (ja) 2024-02-06
CN113539881B (zh) 2025-05-20
JP7098690B2 (ja) 2022-07-11
JP7451579B2 (ja) 2024-03-18
JP2022065055A (ja) 2022-04-26
TWI777249B (zh) 2022-09-11
TWI829276B (zh) 2024-01-11
JP2021170626A (ja) 2021-10-28
TW202246568A (zh) 2022-12-01
JP2021170627A (ja) 2021-10-28
US20210317575A1 (en) 2021-10-14
TW202138611A (zh) 2021-10-16
TW202244314A (zh) 2022-11-16
JP7024029B2 (ja) 2022-02-22
JP2022117984A (ja) 2022-08-12
TWI829275B (zh) 2024-01-11

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