JP7097713B2 - 選択的なＳｉＯ２堆積を用いた自己整合コンタクトの形成方法 - Google Patents

選択的なＳｉＯ２堆積を用いた自己整合コンタクトの形成方法 Download PDF

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JP7097713B2
JP7097713B2 JP2018023873A JP2018023873A JP7097713B2 JP 7097713 B2 JP7097713 B2 JP 7097713B2 JP 2018023873 A JP2018023873 A JP 2018023873A JP 2018023873 A JP2018023873 A JP 2018023873A JP 7097713 B2 JP7097713 B2 JP 7097713B2
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layer
metal
sio
dielectric layer
silanol
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JP2018133568A (ja
JP2018133568A5 (https=
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エヌ．タピリー カンダバラ
ハン サンチョル
ドゥ チェ ス
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
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    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/048—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by using plasmas or gaseous environments, e.g. by nitriding
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    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
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    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
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    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H10W20/0693—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs by forming self-aligned vias
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
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    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
JP2018023873A 2017-02-14 2018-02-14 選択的なＳｉＯ２堆積を用いた自己整合コンタクトの形成方法 Active JP7097713B2 (ja)

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US201762458858P 2017-02-14 2017-02-14
US62/458,858 2017-02-14

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JP2018133568A5 JP2018133568A5 (https=) 2021-04-01
JP7097713B2 true JP7097713B2 (ja) 2022-07-08

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US (1) US10453749B2 (https=)
JP (1) JP7097713B2 (https=)
KR (1) KR102445015B1 (https=)
TW (1) TWI764986B (https=)

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US10586734B2 (en) 2017-11-20 2020-03-10 Tokyo Electron Limited Method of selective film deposition for forming fully self-aligned vias
US11335596B2 (en) * 2018-10-30 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Selective deposition for integrated circuit interconnect structures
US10957579B2 (en) 2018-11-06 2021-03-23 Samsung Electronics Co., Ltd. Integrated circuit devices including a via and methods of forming the same
CN110010460B (zh) * 2019-03-26 2021-03-16 贵阳学院 一种低维材料形成方法
TWI801614B (zh) * 2019-06-21 2023-05-11 聯華電子股份有限公司 半導體元件及其製作方法
KR102833589B1 (ko) 2019-08-23 2025-07-15 삼성전자주식회사 반도체 소자 및 이의 제조 방법
US11227792B2 (en) * 2019-09-19 2022-01-18 International Business Machines Corporation Interconnect structures including self aligned vias
US11361989B2 (en) * 2020-02-11 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing interconnect structures including air gaps
KR20230135603A (ko) * 2021-02-08 2023-09-25 도쿄엘렉트론가부시키가이샤 액상 컨포멀 실리콘 산화물 스핀-온 증착
US11482454B2 (en) * 2021-02-17 2022-10-25 Tokyo Electron Limited Methods for forming self-aligned contacts using spin-on silicon carbide
US11756790B2 (en) 2021-03-09 2023-09-12 Tokyo Electron Limited Method for patterning a dielectric layer

Citations (3)

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JP2010225899A (ja) 2009-03-24 2010-10-07 Elpida Memory Inc 半導体装置の製造方法
JP2013080861A (ja) 2011-10-05 2013-05-02 Toshiba Corp 半導体装置
US20160293731A1 (en) 2014-11-24 2016-10-06 International Business Machines Corporation Replacement metal gate dielectric cap

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JP4063619B2 (ja) * 2002-03-13 2008-03-19 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
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Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2010225899A (ja) 2009-03-24 2010-10-07 Elpida Memory Inc 半導体装置の製造方法
JP2013080861A (ja) 2011-10-05 2013-05-02 Toshiba Corp 半導体装置
US20160293731A1 (en) 2014-11-24 2016-10-06 International Business Machines Corporation Replacement metal gate dielectric cap

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JP2018133568A (ja) 2018-08-23
US10453749B2 (en) 2019-10-22
TWI764986B (zh) 2022-05-21
US20180233407A1 (en) 2018-08-16
TW201841215A (zh) 2018-11-16
KR102445015B1 (ko) 2022-09-19
KR20180093833A (ko) 2018-08-22

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