JP7088125B2 - 被覆物の厚さ測定方法及び研削方法 - Google Patents
被覆物の厚さ測定方法及び研削方法 Download PDFInfo
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- JP7088125B2 JP7088125B2 JP2019091683A JP2019091683A JP7088125B2 JP 7088125 B2 JP7088125 B2 JP 7088125B2 JP 2019091683 A JP2019091683 A JP 2019091683A JP 2019091683 A JP2019091683 A JP 2019091683A JP 7088125 B2 JP7088125 B2 JP 7088125B2
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- 238000000034 method Methods 0.000 title claims description 41
- 238000009675 coating thickness measurement Methods 0.000 title description 3
- 235000012431 wafers Nutrition 0.000 claims description 122
- 238000005259 measurement Methods 0.000 claims description 64
- 239000011248 coating agent Substances 0.000 claims description 57
- 238000000576 coating method Methods 0.000 claims description 57
- 229920005989 resin Polymers 0.000 claims description 41
- 239000011347 resin Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229920002799 BoPET Polymers 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 241001050985 Disco Species 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
ウェーハの第1の直径方向が、長尺のフィルムのMD方向と直交する方向(TD方向と平行となる方向)、すなわち、ウェーハの第1の直径方向とTD方向との成す角度が0°となるように、セラミック定盤(上定盤)に吸着保持させて、積層体を形成した。
ウェーハの第1の直径方向と、長尺のフィルムのTD方向とのなす角の最小値が、10.0°となるようにウェーハを回転させてセラミック定盤(上定盤)に吸着保持させ、積層体を形成した。
ウェーハの第1の直径方向と、長尺のフィルムのTD方向とのなす角の最小値が、22.5°となるようにウェーハを回転させてセラミック定盤(上定盤)に吸着保持させ、積層体を形成した。
5…定盤(上定盤)、 6…UV光、 7…光学センサ、 10…積層体。
Claims (3)
- 長尺のフィルムと樹脂とウェーハとをこの順に積層し、前記フィルムと平坦な面を有する定盤とが接するように押圧し前記樹脂を硬化させることにより、前記フィルムと前記樹脂とを含み表面が平坦な被覆物と前記ウェーハとが積層された積層体を形成し、前記ウェーハ上の少なくとも1本の直径方向において、複数の測定箇所で前記被覆物の厚さを光学センサにより測定する方法であって、
前記ウェーハにおける、前記被覆物の厚さを測定する前記少なくとも1本の直径方向が、前記長尺のフィルムのMD方向及びTD方向とは異なる方向となるようにして、前記被覆物の厚さを測定することを特徴とする被覆物の厚さ測定方法。 - 前記ウェーハとしてノッチ又はオリフラを有するウェーハを用い、
前記被覆物の厚さの測定を、前記ウェーハ面内に含まれる領域を均等に分割するN本(但し、Nは1以上の整数)の直径方向について行うこととし、
前記N本の直径方向のうち、前記ウェーハの中心と前記ノッチ又は前記オリフラの中央部とを通る直径方向を第1の直径方向とし、前記第1の直径方向と前記長尺のフィルムのTD方向とが成す角度の最小値をθ(°)としたときに、
前記Nが奇数の場合はθ=45/N(°)、前記Nが偶数の場合はθ=90/N(°)となるように、前記長尺のフィルムと前記ウェーハとの位置関係を設定して前記積層体を形成することを特徴とする請求項1に記載の被覆物の厚さ測定方法。 - 前記被覆物の表面の平坦面を基準面として前記ウェーハを研削する方法であって、
請求項1又は2に記載の被覆物の厚さ測定方法により前記被覆物の厚さを測定し、
前記測定した被覆物の厚さと前記ウェーハの仕上がり厚さの合計を研削の終点値として研削を行うことを特徴とする研削方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019091683A JP7088125B2 (ja) | 2019-05-14 | 2019-05-14 | 被覆物の厚さ測定方法及び研削方法 |
TW109113996A TW202108975A (zh) | 2019-05-14 | 2020-04-27 | 被覆物之厚度測定方法及研磨方法 |
CN202010355482.8A CN111941266A (zh) | 2019-05-14 | 2020-04-29 | 覆盖物的厚度测量方法及研磨方法 |
KR1020200057100A KR20200131763A (ko) | 2019-05-14 | 2020-05-13 | 피복물의 두께측정방법 및 연삭방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019091683A JP7088125B2 (ja) | 2019-05-14 | 2019-05-14 | 被覆物の厚さ測定方法及び研削方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020188130A JP2020188130A (ja) | 2020-11-19 |
JP7088125B2 true JP7088125B2 (ja) | 2022-06-21 |
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JP2019091683A Active JP7088125B2 (ja) | 2019-05-14 | 2019-05-14 | 被覆物の厚さ測定方法及び研削方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7088125B2 (ja) |
KR (1) | KR20200131763A (ja) |
CN (1) | CN111941266A (ja) |
TW (1) | TW202108975A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002064386A1 (fr) * | 2001-02-15 | 2002-08-22 | Japan Science And Technology Corporation | Mecanisme de suspension de voiture electrique |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004226340A (ja) | 2003-01-27 | 2004-08-12 | Toray Ind Inc | フィルムの厚み測定方法およびフィルムの製造方法 |
JP2009148866A (ja) | 2007-12-21 | 2009-07-09 | Disco Abrasive Syst Ltd | 樹脂被覆方法および装置 |
JP2011245610A (ja) | 2010-05-31 | 2011-12-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06249621A (ja) * | 1993-02-24 | 1994-09-09 | Sumitomo Heavy Ind Ltd | 膜厚分布計測装置 |
JP3841306B2 (ja) * | 2004-08-05 | 2006-11-01 | 日東電工株式会社 | 位相差フィルムの製造方法 |
JP4728023B2 (ja) * | 2005-03-24 | 2011-07-20 | 株式会社ディスコ | ウェハの製造方法 |
US8111406B2 (en) * | 2007-11-14 | 2012-02-07 | Nikon Corporation | Surface position detecting apparatus, surface position detecting method, exposure apparatus, and device manufacturing method |
JP5320058B2 (ja) * | 2008-12-26 | 2013-10-23 | 株式会社ディスコ | 樹脂被覆方法および樹脂被覆装置 |
JP6036732B2 (ja) * | 2014-03-18 | 2016-11-30 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
TWI568589B (zh) * | 2014-10-02 | 2017-02-01 | Nitto Denko Corp | An optical film laminate, an optical display device using the optical film laminate, and a transparent protective film |
JP6787126B2 (ja) * | 2015-06-17 | 2020-11-18 | 東レ株式会社 | 多層積層フィルム |
JP6500796B2 (ja) * | 2016-02-03 | 2019-04-17 | 株式会社Sumco | ウェーハの製造方法 |
JP6650859B2 (ja) * | 2016-10-14 | 2020-02-19 | 三島光産株式会社 | 半導体基板の表面皮膜の厚さ測定方法 |
-
2019
- 2019-05-14 JP JP2019091683A patent/JP7088125B2/ja active Active
-
2020
- 2020-04-27 TW TW109113996A patent/TW202108975A/zh unknown
- 2020-04-29 CN CN202010355482.8A patent/CN111941266A/zh active Pending
- 2020-05-13 KR KR1020200057100A patent/KR20200131763A/ko unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004226340A (ja) | 2003-01-27 | 2004-08-12 | Toray Ind Inc | フィルムの厚み測定方法およびフィルムの製造方法 |
JP2009148866A (ja) | 2007-12-21 | 2009-07-09 | Disco Abrasive Syst Ltd | 樹脂被覆方法および装置 |
JP2011245610A (ja) | 2010-05-31 | 2011-12-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002064386A1 (fr) * | 2001-02-15 | 2002-08-22 | Japan Science And Technology Corporation | Mecanisme de suspension de voiture electrique |
Also Published As
Publication number | Publication date |
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KR20200131763A (ko) | 2020-11-24 |
CN111941266A (zh) | 2020-11-17 |
TW202108975A (zh) | 2021-03-01 |
JP2020188130A (ja) | 2020-11-19 |
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