JP7072439B2 - プラズマ処理装置の洗浄方法 - Google Patents

プラズマ処理装置の洗浄方法 Download PDF

Info

Publication number
JP7072439B2
JP7072439B2 JP2018091107A JP2018091107A JP7072439B2 JP 7072439 B2 JP7072439 B2 JP 7072439B2 JP 2018091107 A JP2018091107 A JP 2018091107A JP 2018091107 A JP2018091107 A JP 2018091107A JP 7072439 B2 JP7072439 B2 JP 7072439B2
Authority
JP
Japan
Prior art keywords
plasma
gas
plasma processing
processing chamber
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018091107A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018195817A (ja
Inventor
拓 村上
優 砂金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US15/976,107 priority Critical patent/US10553409B2/en
Priority to TW107115936A priority patent/TWI756424B/zh
Priority to KR1020180053987A priority patent/KR102538188B1/ko
Publication of JP2018195817A publication Critical patent/JP2018195817A/ja
Application granted granted Critical
Publication of JP7072439B2 publication Critical patent/JP7072439B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
JP2018091107A 2017-05-12 2018-05-10 プラズマ処理装置の洗浄方法 Active JP7072439B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US15/976,107 US10553409B2 (en) 2017-05-12 2018-05-10 Method of cleaning plasma processing apparatus
TW107115936A TWI756424B (zh) 2017-05-12 2018-05-10 電漿處理裝置之洗淨方法
KR1020180053987A KR102538188B1 (ko) 2017-05-12 2018-05-11 플라즈마 처리 장치의 세정 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017095746 2017-05-12
JP2017095746 2017-05-12

Publications (2)

Publication Number Publication Date
JP2018195817A JP2018195817A (ja) 2018-12-06
JP7072439B2 true JP7072439B2 (ja) 2022-05-20

Family

ID=64570906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018091107A Active JP7072439B2 (ja) 2017-05-12 2018-05-10 プラズマ処理装置の洗浄方法

Country Status (3)

Country Link
JP (1) JP7072439B2 (ko)
KR (1) KR102538188B1 (ko)
TW (1) TWI756424B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7422531B2 (ja) 2019-12-17 2024-01-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7454961B2 (ja) 2020-03-05 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置
JP2023001618A (ja) * 2021-06-21 2023-01-06 東京エレクトロン株式会社 プラズマ処理装置及びクリーニング方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010008138A1 (en) 1996-06-28 2001-07-19 Alex Demos In-situ chamber cleaning method for substrate processing chamber using high density inductively coupled fluorine plasma
JP2003155569A (ja) 2001-11-16 2003-05-30 Nec Kagoshima Ltd プラズマｃｖｄ装置及びそのクリーニング方法
JP2007012724A (ja) 2005-06-29 2007-01-18 Matsushita Electric Ind Co Ltd プラズマ処理装置および処理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10177993A (ja) * 1996-12-18 1998-06-30 Hitachi Ltd 平行平板狭電極型のプラズマ処理装置
JP4963842B2 (ja) * 2006-02-13 2012-06-27 東京エレクトロン株式会社 基板処理室の洗浄方法、記憶媒体及び基板処理装置
US8435379B2 (en) * 2007-05-08 2013-05-07 Applied Materials, Inc. Substrate cleaning chamber and cleaning and conditioning methods
JP5364514B2 (ja) * 2009-09-03 2013-12-11 東京エレクトロン株式会社 チャンバ内クリーニング方法
WO2011117916A1 (ja) * 2010-03-24 2011-09-29 キヤノンアネルバ株式会社 電子デバイスの製造方法およびスパッタリング方法
JP2012204644A (ja) * 2011-03-25 2012-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP6661283B2 (ja) * 2015-05-14 2020-03-11 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010008138A1 (en) 1996-06-28 2001-07-19 Alex Demos In-situ chamber cleaning method for substrate processing chamber using high density inductively coupled fluorine plasma
JP2003155569A (ja) 2001-11-16 2003-05-30 Nec Kagoshima Ltd プラズマｃｖｄ装置及びそのクリーニング方法
JP2007012724A (ja) 2005-06-29 2007-01-18 Matsushita Electric Ind Co Ltd プラズマ処理装置および処理方法

Also Published As

Publication number Publication date
JP2018195817A (ja) 2018-12-06
TWI756424B (zh) 2022-03-01
KR102538188B1 (ko) 2023-05-30
KR20180124773A (ko) 2018-11-21
TW201909272A (zh) 2019-03-01

Similar Documents

Publication Publication Date Title
JP6298391B2 (ja) プラズマ処理方法及びプラズマ処理装置
JP6723659B2 (ja) プラズマ処理方法及びプラズマ処理装置
JP5956933B2 (ja) プラズマ処理方法及びプラズマ処理装置
JP7072439B2 (ja) プラズマ処理装置の洗浄方法
JP6422262B2 (ja) プラズマ処理方法及びプラズマ処理装置
KR102348077B1 (ko) 플라즈마 처리 방법
KR101898079B1 (ko) 플라즈마 처리 장치
KR20180008310A (ko) 플라즈마 에칭 방법, 플라즈마 에칭 장치, 및 기판 탑재대
US10553409B2 (en) Method of cleaning plasma processing apparatus
JP2010199475A (ja) プラズマ処理装置のクリーニング方法及び記憶媒体
TW201604319A (zh) 乾式洗淨方法及電漿處理裝置
TW201940257A (zh) 清潔方法及處理裝置
KR20140116811A (ko) 플라즈마 에칭 방법 및 플라즈마 에칭 장치
TWI831956B (zh) 清潔處理方法及電漿處理裝置
TW201535511A (zh) 電漿處理裝置
JP2019012732A (ja) プラズマエッチング方法及びプラズマエッチング装置
US7569478B2 (en) Method and apparatus for manufacturing semiconductor device, control program and computer storage medium
JP4684924B2 (ja) プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
JP2006319042A (ja) プラズマクリーニング方法、成膜方法
JP7398909B2 (ja) 静電吸着方法及びプラズマ処理装置
JP5089871B2 (ja) 半導体装置の製造方法
TWI754002B (zh) 電漿處理方法及電漿處理裝置
WO2022249964A1 (ja) クリーニング方法およびプラズマ処理方法
JP4800077B2 (ja) プラズマエッチング方法
US20070218698A1 (en) Plasma etching method, plasma etching apparatus, and computer-readable storage medium

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210118

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20211124

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211227

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220412

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220510

R150 Certificate of patent or registration of utility model

Ref document number: 7072439

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150