JP7060633B2 - 成膜装置及び電子デバイス製造装置 - Google Patents

成膜装置及び電子デバイス製造装置 Download PDF

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Publication number
JP7060633B2
JP7060633B2 JP2020012352A JP2020012352A JP7060633B2 JP 7060633 B2 JP7060633 B2 JP 7060633B2 JP 2020012352 A JP2020012352 A JP 2020012352A JP 2020012352 A JP2020012352 A JP 2020012352A JP 7060633 B2 JP7060633 B2 JP 7060633B2
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Japan
Prior art keywords
film
film forming
etching
forming apparatus
etching beam
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JP2020012352A
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English (en)
Japanese (ja)
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JP2021116470A (ja
Inventor
敏治 内田
行生 松本
可子 阿部
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Canon Tokki Corp
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Canon Tokki Corp
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Priority to JP2020012352A priority Critical patent/JP7060633B2/ja
Priority to TW110101881A priority patent/TWI824225B/zh
Priority to KR1020210008805A priority patent/KR102490801B1/ko
Priority to CN202110123215.2A priority patent/CN113265640B/zh
Publication of JP2021116470A publication Critical patent/JP2021116470A/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Devices For Checking Fares Or Tickets At Control Points (AREA)
  • Electroluminescent Light Sources (AREA)
JP2020012352A 2020-01-29 2020-01-29 成膜装置及び電子デバイス製造装置 Active JP7060633B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020012352A JP7060633B2 (ja) 2020-01-29 2020-01-29 成膜装置及び電子デバイス製造装置
TW110101881A TWI824225B (zh) 2020-01-29 2021-01-19 成膜裝置及電子裝置製造裝置
KR1020210008805A KR102490801B1 (ko) 2020-01-29 2021-01-21 성막 장치 및 전자 디바이스 제조 장치
CN202110123215.2A CN113265640B (zh) 2020-01-29 2021-01-29 成膜装置以及电子器件的制造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020012352A JP7060633B2 (ja) 2020-01-29 2020-01-29 成膜装置及び電子デバイス製造装置

Publications (2)

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JP2021116470A JP2021116470A (ja) 2021-08-10
JP7060633B2 true JP7060633B2 (ja) 2022-04-26

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JP2020012352A Active JP7060633B2 (ja) 2020-01-29 2020-01-29 成膜装置及び電子デバイス製造装置

Country Status (4)

Country Link
JP (1) JP7060633B2 (ko)
KR (1) KR102490801B1 (ko)
CN (1) CN113265640B (ko)
TW (1) TWI824225B (ko)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010539674A (ja) 2007-09-18 2010-12-16 ビーコ・インスツルメンツ・インコーポレーテッド エネルギー粒子ビームを使用した基板の表面処理方法及び装置
JP2014500841A (ja) 2010-10-15 2014-01-16 ガーディアン・インダストリーズ・コーポレーション ソーダ石灰シリカガラス基板、表面処理済みガラス基板、及び同基板を組み込んだ装置
JP2019071267A (ja) 2017-03-30 2019-05-09 株式会社クオルテック Ｅｌ表示パネルの製造方法、ｅｌ表示パネルの製造装置、およびｅｌ表示パネルとｅｌ表示装置。

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62281336A (ja) * 1986-05-30 1987-12-07 Nec Corp 薄膜の形成方法
JPH04154121A (ja) * 1990-10-18 1992-05-27 Nec Yamagata Ltd スパッタリング装置
JPH08302465A (ja) * 1995-05-09 1996-11-19 Mitsubishi Heavy Ind Ltd プラズマによるスパッターを利用した成膜装置
JPH09251986A (ja) * 1996-03-15 1997-09-22 Sony Corp エッチング装置及びエッチング方法
JP4482170B2 (ja) * 1999-03-26 2010-06-16 キヤノンアネルバ株式会社 成膜装置及び成膜方法
TW552306B (en) * 1999-03-26 2003-09-11 Anelva Corp Method of removing accumulated films from the surfaces of substrate holders in film deposition apparatus, and film deposition apparatus
JP2002302764A (ja) * 2001-04-04 2002-10-18 Anelva Corp スパッタリング装置
JP3771882B2 (ja) * 2002-04-30 2006-04-26 三菱重工業株式会社 金属膜作製装置及び金属膜作製方法
JP4922756B2 (ja) * 2004-04-09 2012-04-25 株式会社アルバック 成膜装置および成膜方法
JP4796965B2 (ja) * 2004-07-02 2011-10-19 株式会社アルバック エッチング方法及び装置
US8039052B2 (en) * 2007-09-06 2011-10-18 Intermolecular, Inc. Multi-region processing system and heads
JP5853487B2 (ja) * 2010-08-19 2016-02-09 東レ株式会社 放電電極及び放電方法
KR20120067394A (ko) 2010-12-16 2012-06-26 김정효 기체 용해유니트 및 이를 이용한 산소 용해장치
US9406485B1 (en) * 2013-12-18 2016-08-02 Surfx Technologies Llc Argon and helium plasma apparatus and methods
WO2016136255A1 (ja) * 2015-02-25 2016-09-01 株式会社アルバック 成膜装置及び成膜方法
JP6447459B2 (ja) * 2015-10-28 2019-01-09 住友金属鉱山株式会社 成膜方法及びその装置並びに成膜体製造装置
TWI619561B (zh) * 2016-07-28 2018-04-01 Rotating target
US10002764B1 (en) * 2016-12-16 2018-06-19 Varian Semiconductor Equipment Associates, Inc. Sputter etch material selectivity

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010539674A (ja) 2007-09-18 2010-12-16 ビーコ・インスツルメンツ・インコーポレーテッド エネルギー粒子ビームを使用した基板の表面処理方法及び装置
JP2014500841A (ja) 2010-10-15 2014-01-16 ガーディアン・インダストリーズ・コーポレーション ソーダ石灰シリカガラス基板、表面処理済みガラス基板、及び同基板を組み込んだ装置
JP2019071267A (ja) 2017-03-30 2019-05-09 株式会社クオルテック Ｅｌ表示パネルの製造方法、ｅｌ表示パネルの製造装置、およびｅｌ表示パネルとｅｌ表示装置。

Also Published As

Publication number Publication date
KR102490801B1 (ko) 2023-01-20
CN113265640A (zh) 2021-08-17
TWI824225B (zh) 2023-12-01
JP2021116470A (ja) 2021-08-10
TW202144602A (zh) 2021-12-01
KR20210097029A (ko) 2021-08-06
CN113265640B (zh) 2023-08-01

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