TWI824225B - 成膜裝置及電子裝置製造裝置 - Google Patents
成膜裝置及電子裝置製造裝置 Download PDFInfo
- Publication number
- TWI824225B TWI824225B TW110101881A TW110101881A TWI824225B TW I824225 B TWI824225 B TW I824225B TW 110101881 A TW110101881 A TW 110101881A TW 110101881 A TW110101881 A TW 110101881A TW I824225 B TWI824225 B TW I824225B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- etching
- beam irradiation
- forming material
- forming
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000007599 discharging Methods 0.000 claims abstract 3
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 69
- 238000010586 diagram Methods 0.000 description 18
- 230000007246 mechanism Effects 0.000 description 16
- 239000010409 thin film Substances 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 230000032258 transport Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Devices For Checking Fares Or Tickets At Control Points (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020012352A JP7060633B2 (ja) | 2020-01-29 | 2020-01-29 | 成膜装置及び電子デバイス製造装置 |
JP2020-012352 | 2020-01-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202144602A TW202144602A (zh) | 2021-12-01 |
TWI824225B true TWI824225B (zh) | 2023-12-01 |
Family
ID=77174195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110101881A TWI824225B (zh) | 2020-01-29 | 2021-01-19 | 成膜裝置及電子裝置製造裝置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7060633B2 (ko) |
KR (1) | KR102490801B1 (ko) |
CN (1) | CN113265640B (ko) |
TW (1) | TWI824225B (ko) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62281336A (ja) * | 1986-05-30 | 1987-12-07 | Nec Corp | 薄膜の形成方法 |
WO2009039261A1 (en) * | 2007-09-18 | 2009-03-26 | Veeco Instruments Inc. | Method and apparatus for surface processing of a substrate using an energetic particle beam |
TW200939323A (en) * | 2007-09-06 | 2009-09-16 | Intermolecular Inc | Multi-region processing system and heads |
JP2014500841A (ja) * | 2010-10-15 | 2014-01-16 | ガーディアン・インダストリーズ・コーポレーション | ソーダ石灰シリカガラス基板、表面処理済みガラス基板、及び同基板を組み込んだ装置 |
US9406485B1 (en) * | 2013-12-18 | 2016-08-02 | Surfx Technologies Llc | Argon and helium plasma apparatus and methods |
TW201803657A (zh) * | 2016-07-28 | 2018-02-01 | 歐美達應用材料科技股份有限公司 | 旋轉靶材 |
US20180174843A1 (en) * | 2016-12-16 | 2018-06-21 | Varian Semiconductor Equipment Associates, Inc. | Sputter etch material selectivity |
JP2019071267A (ja) * | 2017-03-30 | 2019-05-09 | 株式会社クオルテック | El表示パネルの製造方法、el表示パネルの製造装置、およびel表示パネルとel表示装置。 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04154121A (ja) * | 1990-10-18 | 1992-05-27 | Nec Yamagata Ltd | スパッタリング装置 |
JPH08302465A (ja) * | 1995-05-09 | 1996-11-19 | Mitsubishi Heavy Ind Ltd | プラズマによるスパッターを利用した成膜装置 |
JPH09251986A (ja) * | 1996-03-15 | 1997-09-22 | Sony Corp | エッチング装置及びエッチング方法 |
JP4482170B2 (ja) * | 1999-03-26 | 2010-06-16 | キヤノンアネルバ株式会社 | 成膜装置及び成膜方法 |
TW552306B (en) * | 1999-03-26 | 2003-09-11 | Anelva Corp | Method of removing accumulated films from the surfaces of substrate holders in film deposition apparatus, and film deposition apparatus |
JP2002302764A (ja) * | 2001-04-04 | 2002-10-18 | Anelva Corp | スパッタリング装置 |
JP3771882B2 (ja) * | 2002-04-30 | 2006-04-26 | 三菱重工業株式会社 | 金属膜作製装置及び金属膜作製方法 |
JP4922756B2 (ja) * | 2004-04-09 | 2012-04-25 | 株式会社アルバック | 成膜装置および成膜方法 |
JP4796965B2 (ja) * | 2004-07-02 | 2011-10-19 | 株式会社アルバック | エッチング方法及び装置 |
JP5853487B2 (ja) * | 2010-08-19 | 2016-02-09 | 東レ株式会社 | 放電電極及び放電方法 |
KR20120067394A (ko) | 2010-12-16 | 2012-06-26 | 김정효 | 기체 용해유니트 및 이를 이용한 산소 용해장치 |
WO2016136255A1 (ja) * | 2015-02-25 | 2016-09-01 | 株式会社アルバック | 成膜装置及び成膜方法 |
JP6447459B2 (ja) * | 2015-10-28 | 2019-01-09 | 住友金属鉱山株式会社 | 成膜方法及びその装置並びに成膜体製造装置 |
-
2020
- 2020-01-29 JP JP2020012352A patent/JP7060633B2/ja active Active
-
2021
- 2021-01-19 TW TW110101881A patent/TWI824225B/zh active
- 2021-01-21 KR KR1020210008805A patent/KR102490801B1/ko active IP Right Grant
- 2021-01-29 CN CN202110123215.2A patent/CN113265640B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62281336A (ja) * | 1986-05-30 | 1987-12-07 | Nec Corp | 薄膜の形成方法 |
TW200939323A (en) * | 2007-09-06 | 2009-09-16 | Intermolecular Inc | Multi-region processing system and heads |
WO2009039261A1 (en) * | 2007-09-18 | 2009-03-26 | Veeco Instruments Inc. | Method and apparatus for surface processing of a substrate using an energetic particle beam |
JP2014500841A (ja) * | 2010-10-15 | 2014-01-16 | ガーディアン・インダストリーズ・コーポレーション | ソーダ石灰シリカガラス基板、表面処理済みガラス基板、及び同基板を組み込んだ装置 |
US9406485B1 (en) * | 2013-12-18 | 2016-08-02 | Surfx Technologies Llc | Argon and helium plasma apparatus and methods |
TW201803657A (zh) * | 2016-07-28 | 2018-02-01 | 歐美達應用材料科技股份有限公司 | 旋轉靶材 |
US20180174843A1 (en) * | 2016-12-16 | 2018-06-21 | Varian Semiconductor Equipment Associates, Inc. | Sputter etch material selectivity |
JP2019071267A (ja) * | 2017-03-30 | 2019-05-09 | 株式会社クオルテック | El表示パネルの製造方法、el表示パネルの製造装置、およびel表示パネルとel表示装置。 |
Also Published As
Publication number | Publication date |
---|---|
KR102490801B1 (ko) | 2023-01-20 |
JP7060633B2 (ja) | 2022-04-26 |
CN113265640A (zh) | 2021-08-17 |
JP2021116470A (ja) | 2021-08-10 |
TW202144602A (zh) | 2021-12-01 |
KR20210097029A (ko) | 2021-08-06 |
CN113265640B (zh) | 2023-08-01 |
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