JP2014500841A - ソーダ石灰シリカガラス基板、表面処理済みガラス基板、及び同基板を組み込んだ装置 - Google Patents
ソーダ石灰シリカガラス基板、表面処理済みガラス基板、及び同基板を組み込んだ装置 Download PDFInfo
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/34—Sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/31—Pre-treatment
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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Abstract
【解決手段】 本発明のある例示的実施形態は、例えば、ソーダ石灰シリカアルカリイオンガラス基板のような、ソーダ石灰シリカガラス基板の表面処理方法と、その結果となる表面処理済みガラス物品に関する。より詳細には、本発明のある例示的実施形態は、ガラス基板の表面上部をイオン源を使用して除去する方法に関する。この部分の除去中又は除去後、キャッピング層として使用される別の層でガラスを被覆することもできる。発明のある例示的実施形態では、キャッピング層で被覆されたガラス基板を電子装置のカラーフィルタ及び/又はTFT基板として使用することもできる。発明の他の例示的実施形態では、キャッピング層がその上に成膜されたガラス基板は様々なディスプレイ装置で使用することもできる。
【選択図】図7
Description
これらの及びその他の特徴及び利点は、以下図面と共に発明の代表的例示的実施形態の詳細な説明を参照することにより、より良くより完全に理解することができよう。
Claims (20)
- 被覆物製造方法であって、
SiO2を約67から75%、Na2Oを約6から20%、及びCaOを約5から15%含むガラス基板実質全表面に対し、少なくとも1つの第1イオン源を使用して、前記基板の厚さを少なくとも約100オングストローム薄くするために、イオンビームミリングを行い、
前記イオンビームミリングの間に、又は前記イオンビームミリングの後に、イオンビームミリング済みの前記基板表面の少なくとも一部分上に、少なくとも1つのスパッタリングターゲットと少なくとも1つの第2イオン源を使用して、イオンビームアシスト法(IBAD:Ion Beam Assisted Deposition)により、AlSiOxを含む層を少なくとも1層形成する、
被覆物製造方法。 - AlSiOxを含む前記層をAlとSiを含むターゲットから成膜する、
請求項1に記載の被覆物製造方法。 - AlSiOxを含む前記層の厚さが約200から300オングストロームである、
請求項1又は請求項2に記載の被覆物製造方法。 - AlSiOxを含む前記層の屈折率が約1.55以下である、
請求項1から3のいずれか1項に記載の被覆物製造方法。 - AlSiOxを含む前記層の光学的消衰係数kが約0である、
請求項1から4のいずれか1項に記載の被覆物製造方法。 - 前記イオンビームミリングにより基板の厚さを約150オングストロームから250オングストローム薄くする、
請求項1から5のいずれか1項に記載の被覆物製造方法。 - AlSiOxを含む前記層の厚さが、前記イオンビームミリングの結果として薄くなる前記基板の厚さと実質的に同じである、
請求項1から6のいずれか1項に記載の被覆物製造方法。 - AlSiOxを含む前記層の厚さが、前記イオンビームミリング処理の結果として薄くなる前記基板の厚さよりも厚い、
請求項1から7のいずれか1項に記載の被覆物製造方法。 - 前記IBADがアルゴンイオンを伴う、
請求項1から8のいずれか1項に記載の被覆物製造方法。 - 前記ガラス基板がソーダ石灰シリカ高透過ガラス基板である、
請求項1から9のいずれか1項に記載の被覆物製造方法。 - 電子ディスプレイ装置の製造方法であって、
請求項1から10のいずれか1項に記載の方法により被覆物を製造し、
前記被覆物をその基部として使用するTFT基板を製造し、
カラーフィルタ基板を提供し、
前記カラーフィルタ基板と前記TFT基板との間に液晶材料の層を成膜する、
電子ディスプレイ装置の製造方法。 - 電子ディスプレイ装置の製造方法であって、
請求項1から請求項10のいずれか1項に記載の方法により被覆物を製造し、
前記被覆物をその基部として使用するカラーフィルタ基板を製造し、
TFT基板を提供し、
前記カラーフィルタ基板と前記TFT基板との間に液晶材料の層を成膜する、
電子ディスプレイ装置の製造方法。 - 電子ディスプレイ装置の製造方法であって、
請求項1から10のいずれか1項に記載の方法により第1被覆物を製造し、
前記第1被覆物をその基部として使用するカラーフィルタ基板を製造し、
請求項1から10のいずれか1項に記載の方法により第2被覆物を製造し、
前記第2被覆物をその基部として使用するTFT基板を製造し、
前記カラーフィルタ基板と前記TFT基板との間に液晶材料の層を成膜する、
電子ディスプレイ装置の製造方法。 - 電子装置の製造方法であって、
Ar及びO2含有環境で、複数の第1イオン源を使用したガラス基板実質全表面に対し、前記基板の厚さを少なくとも約100オングストローム薄くするために、イオンビームミリングを行い、
前記イオンビームミリングの後に、前記イオンビームミリング済み基板表面の少なくとも一部分上に、イオンビームアシスト法(IBAD)により、ケイ素含有層を少なくとも1層形成し、
前記イオンビームミリングを行い、その上にケイ素含有層を形成した基板を、電子装置に組み込み、
前記IBADは、Ar及びO2含有環境で実行され、それぞれに付随する第2イオン源を備えている複数のスパッタリングターゲットを含む、
電子装置の製造方法。 - 前記ケイ素含有層が、AlSiOxを含み、約1.55以下の屈折率と約0の光学的消衰係数kを持ち、前記AlSiOx主成分の層が200−300オングストロームの厚さである、
請求項14に記載の電子装置の製造方法。 - 前記イオンビームミリングと前記ケイ素含有層の成膜が、前記基板がイオンビームミリングされておらずケイ素含有層が成膜されていない状況と比較して、アルカリ及びアルカリ性イオン並びに硫酸塩、炭酸塩の少なくとも約90%の、前記基板から前記装置の機能層への移動を妨げるという結果をもたらす、
請求項14又は15に記載の電子装置の製造方法。 - 前記イオンビームミリングと前記ケイ素含有層の成膜が、前記基板がイオンビームミリングされておらずケイ素含有層が成膜されていない状況と比較して、アルカリ及びアルカリ性イオン並びに硫酸塩、炭酸塩の少なくとも約95%の、前記基板から前記装置の機能層への移動を妨げるという結果をもたらす、
請求項14から16のいずれか1項に記載の電子装置の製造方法。 - 前記ガラス基板が高透過ガラス基板である、
請求項14から17のいずれか1項に記載の電子装置の製造方法。 - 基板が前記電子装置用TFT基板として使用されている、
請求項14から18のいずれか1項に記載の電子装置の製造方法。 - TFT及び/又はカラーフィルタ基板を含む電子装置であって、
前記TFT及び/又はカラーフィルタ基板が、
SiO2を約67から75%、Na2Oを約6から20%及びCaOを約5から15%含み、その表面部分がミリングされ少なくとも約150オングストローム除去されているガラス基板と、
前記ガラス基板のミリング済み表面部分上に接触するように配置され、イオンビームアシスト法により成膜され、1.55以下の屈折率、約0の光学的消衰係数を持ち、AlSiOxが200−300オングストロームの厚さであるAlSiOxの又はAlSiOx含有層と、
を含む電子装置。
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US12/923,952 US8541792B2 (en) | 2010-10-15 | 2010-10-15 | Method of treating the surface of a soda lime silica glass substrate, surface-treated glass substrate, and device incorporating the same |
US12/923,952 | 2010-10-15 | ||
PCT/US2011/001709 WO2012050597A1 (en) | 2010-10-15 | 2011-10-04 | Method of treating the surface of a soda lime silica glass substrate, surface-treated glass substrate, and device incorporating the same |
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JP2019513674A (ja) * | 2016-04-12 | 2019-05-30 | エージーシー グラス ユーロップAgc Glass Europe | 低下した内部反射率のガラス基材およびその製造方法 |
EP3448820B1 (en) * | 2016-04-26 | 2023-07-12 | Pilkington Group Limited | Corrosion resistant coated glass substrate |
US11894213B2 (en) * | 2018-06-22 | 2024-02-06 | Hitachi High-Tech Corporation | Ion milling device |
KR102600928B1 (ko) | 2018-07-05 | 2023-11-14 | 삼성디스플레이 주식회사 | 발광 표시 장치 및 그의 제조 방법 |
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TWI824225B (zh) * | 2020-01-29 | 2023-12-01 | 日商佳能特機股份有限公司 | 成膜裝置及電子裝置製造裝置 |
Also Published As
Publication number | Publication date |
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US8541792B2 (en) | 2013-09-24 |
WO2012050597A1 (en) | 2012-04-19 |
CN103313950A (zh) | 2013-09-18 |
US20120091475A1 (en) | 2012-04-19 |
CN103313950B (zh) | 2015-09-30 |
EP2627614A1 (en) | 2013-08-21 |
TW201222634A (en) | 2012-06-01 |
TWI532078B (zh) | 2016-05-01 |
JP6013343B2 (ja) | 2016-10-25 |
KR20130132436A (ko) | 2013-12-04 |
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