JP7052912B1 - 単結晶引上げ装置 - Google Patents
単結晶引上げ装置 Download PDFInfo
- Publication number
- JP7052912B1 JP7052912B1 JP2021098721A JP2021098721A JP7052912B1 JP 7052912 B1 JP7052912 B1 JP 7052912B1 JP 2021098721 A JP2021098721 A JP 2021098721A JP 2021098721 A JP2021098721 A JP 2021098721A JP 7052912 B1 JP7052912 B1 JP 7052912B1
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- Prior art keywords
- single crystal
- raw material
- shielding member
- end surface
- recess
- Prior art date
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- 239000013078 crystal Substances 0.000 title claims abstract description 109
- 239000002994 raw material Substances 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 54
- 238000010586 diagram Methods 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 40
- 229910052799 carbon Inorganic materials 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 27
- 239000010453 quartz Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 229910002804 graphite Inorganic materials 0.000 description 10
- 239000010439 graphite Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000155 melt Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
図1に概略図を示した単結晶引上げ装置100を用いて、直径800mm(32インチ)の石英ルツボを装備し、400kgのシリコン多結晶を使用して、磁場印加チョクラルスキー法(MCZ法)を用いて12インチ(300mm)のシリコン単結晶を育成し、引き上げた。
比較例1では、熱遮蔽部材8の代わりに、図6に示す、下端面8a’に凹部が形成されていない熱遮蔽部材8’を用いたこと以外は実施例1と同様にして、シリコン単結晶を育成し、引き上げた。すなわち、比較例1で用いた熱遮蔽部材8’では、凹部の幅は0mmとした。
Claims (3)
- チョクラルスキー法による単結晶引上げ装置であって、原料融液表面に対向する熱遮蔽部材を有し、該熱遮蔽部材の前記原料融液表面に対向する下端面は凹部を有し、前記下端面の表面積は、前記凹部が形成されていない平坦な前記下端面の表面積を基準として、120%以上であり、前記凹部は最大深さが0.5mm以上、30mm以下のものであることを特徴とする単結晶引上げ装置。
- 前記凹部の幅は2mm以上、30mm未満のものであることを特徴とする請求項1に記載の単結晶引上げ装置。
- 前記単結晶がシリコン単結晶であることを特徴とする請求項1または請求項2に記載の単結晶引上げ装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021098721A JP7052912B1 (ja) | 2021-06-14 | 2021-06-14 | 単結晶引上げ装置 |
KR1020220068809A KR20220167762A (ko) | 2021-06-14 | 2022-06-07 | 단결정 인상장치 |
CN202210649609.6A CN115537909A (zh) | 2021-06-14 | 2022-06-09 | 单晶提拉装置 |
Applications Claiming Priority (1)
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JP2021098721A JP7052912B1 (ja) | 2021-06-14 | 2021-06-14 | 単結晶引上げ装置 |
Publications (2)
Publication Number | Publication Date |
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JP7052912B1 true JP7052912B1 (ja) | 2022-04-12 |
JP2022190408A JP2022190408A (ja) | 2022-12-26 |
Family
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JP2021098721A Active JP7052912B1 (ja) | 2021-06-14 | 2021-06-14 | 単結晶引上げ装置 |
Country Status (3)
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---|---|
JP (1) | JP7052912B1 (ja) |
KR (1) | KR20220167762A (ja) |
CN (1) | CN115537909A (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002097098A (ja) | 2000-09-26 | 2002-04-02 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法及び半導体単結晶の製造装置 |
JP2009184917A (ja) | 2009-04-03 | 2009-08-20 | Sumco Techxiv株式会社 | シリコン融液の汚染防止装置 |
JP2019026485A (ja) | 2017-07-25 | 2019-02-21 | 株式会社Sumco | シリコン単結晶の製造方法 |
JP2020037499A (ja) | 2018-09-03 | 2020-03-12 | 株式会社Sumco | 熱遮蔽部材、単結晶引き上げ装置及び単結晶の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0826884A (ja) * | 1994-07-22 | 1996-01-30 | Mitsubishi Materials Corp | 単結晶引上装置 |
JP3953042B2 (ja) | 2003-05-16 | 2007-08-01 | 株式会社Sumco | チョクラルスキー法による原料供給装置および原料供給方法 |
JP2007191353A (ja) | 2006-01-19 | 2007-08-02 | Toshiba Ceramics Co Ltd | 輻射シールド及びそれを具備する単結晶引上装置 |
JP5577873B2 (ja) | 2010-06-16 | 2014-08-27 | 信越半導体株式会社 | 遮熱部材下端面と原料融液面との間の距離の測定方法、遮熱部材下端面と原料融液面との間の距離の制御方法、シリコン単結晶の製造方法 |
KR101516586B1 (ko) | 2013-09-16 | 2015-05-04 | 주식회사 엘지실트론 | 열차폐재 및 이를 포함하는 실리콘 단결정 잉곳 제조장치 |
JP6627737B2 (ja) | 2016-12-16 | 2020-01-08 | 信越半導体株式会社 | 単結晶引上げ装置 |
-
2021
- 2021-06-14 JP JP2021098721A patent/JP7052912B1/ja active Active
-
2022
- 2022-06-07 KR KR1020220068809A patent/KR20220167762A/ko unknown
- 2022-06-09 CN CN202210649609.6A patent/CN115537909A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002097098A (ja) | 2000-09-26 | 2002-04-02 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法及び半導体単結晶の製造装置 |
JP2009184917A (ja) | 2009-04-03 | 2009-08-20 | Sumco Techxiv株式会社 | シリコン融液の汚染防止装置 |
JP2019026485A (ja) | 2017-07-25 | 2019-02-21 | 株式会社Sumco | シリコン単結晶の製造方法 |
JP2020037499A (ja) | 2018-09-03 | 2020-03-12 | 株式会社Sumco | 熱遮蔽部材、単結晶引き上げ装置及び単結晶の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN115537909A (zh) | 2022-12-30 |
JP2022190408A (ja) | 2022-12-26 |
KR20220167762A (ko) | 2022-12-21 |
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