JP7041051B2 - 摩擦が低減された支持表面を特徴とするウエハチャック - Google Patents

摩擦が低減された支持表面を特徴とするウエハチャック Download PDF

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Publication number
JP7041051B2
JP7041051B2 JP2018507638A JP2018507638A JP7041051B2 JP 7041051 B2 JP7041051 B2 JP 7041051B2 JP 2018507638 A JP2018507638 A JP 2018507638A JP 2018507638 A JP2018507638 A JP 2018507638A JP 7041051 B2 JP7041051 B2 JP 7041051B2
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JP
Japan
Prior art keywords
wafer chuck
wafer
wrapping tool
chuck
wrapping
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Active
Application number
JP2018507638A
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English (en)
Japanese (ja)
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JP2018526822A5 (enExample
JP2018526822A (ja
Inventor
ジェイ． グラトリックス，エドワード
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
II VI Delaware Inc
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II VI Delaware Inc
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Publication of JP2018526822A5 publication Critical patent/JP2018526822A5/ja
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Classifications

    • H10P72/7611—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B24B37/14—Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H10P72/7614—
    • H10P72/7616—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B31/00—Chucks; Expansion mandrels; Adaptations thereof for remote control
    • B23B31/02—Chucks
    • B23B31/24—Chucks characterised by features relating primarily to remote control of the gripping means
    • B23B31/28—Chucks characterised by features relating primarily to remote control of the gripping means using electric or magnetic means in the chuck
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B31/00—Chucks; Expansion mandrels; Adaptations thereof for remote control
    • B23B31/02—Chucks
    • B23B31/24—Chucks characterised by features relating primarily to remote control of the gripping means
    • B23B31/30—Chucks characterised by features relating primarily to remote control of the gripping means using fluid-pressure means in the chuck
    • B23B31/307—Vacuum chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Jigs For Machine Tools (AREA)
JP2018507638A 2015-08-14 2016-08-10 摩擦が低減された支持表面を特徴とするウエハチャック Active JP7041051B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562205425P 2015-08-14 2015-08-14
US62/205,425 2015-08-14
PCT/US2016/046436 WO2017030873A1 (en) 2015-08-14 2016-08-10 Wafer chuck featuring reduced friction support surface

Publications (3)

Publication Number Publication Date
JP2018526822A JP2018526822A (ja) 2018-09-13
JP2018526822A5 JP2018526822A5 (enExample) 2021-05-13
JP7041051B2 true JP7041051B2 (ja) 2022-03-23

Family

ID=58050865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018507638A Active JP7041051B2 (ja) 2015-08-14 2016-08-10 摩擦が低減された支持表面を特徴とするウエハチャック

Country Status (4)

Country Link
US (1) US10790181B2 (enExample)
EP (1) EP3334566B1 (enExample)
JP (1) JP7041051B2 (enExample)
WO (1) WO2017030873A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119882354A (zh) * 2018-11-05 2025-04-25 Asml控股股份有限公司 在硬陶瓷涂层中制造纳米脊的方法
JPWO2025158593A1 (enExample) * 2024-01-24 2025-07-31

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000061842A (ja) 1998-08-18 2000-02-29 Toshiba Mach Co Ltd 研磨装置
JP2002057209A (ja) 2000-06-01 2002-02-22 Tokyo Electron Ltd 枚葉式処理装置および枚葉式処理方法
JP2008198843A (ja) 2007-02-14 2008-08-28 Tokyo Electron Ltd 基板載置台及びその表面処理方法
JP2009214271A (ja) 2008-03-12 2009-09-24 Tosoh Corp 研磨装置用の研磨工具および研磨方法
JP2018511185A (ja) 2015-02-23 2018-04-19 エム キューブド テクノロジーズ, インコーポレーテッドM Cubed Technologies, Inc. 静電チャック用薄膜電極

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551192A (en) 1983-06-30 1985-11-05 International Business Machines Corporation Electrostatic or vacuum pinchuck formed with microcircuit lithography
US4692836A (en) * 1983-10-31 1987-09-08 Toshiba Kikai Kabushiki Kaisha Electrostatic chucks
US5342068A (en) * 1993-08-26 1994-08-30 Texas Instruments Incorporated Laminar flow vacuum chuck
JPH07171747A (ja) 1993-12-21 1995-07-11 Ricoh Co Ltd 研削研磨装置
US5692873A (en) 1995-03-31 1997-12-02 Motorola, Inc. Apparatus for holding a piece of semiconductor
JPH0936070A (ja) 1995-07-21 1997-02-07 Nippon Steel Corp 半導体ウエハの研磨装置
JPH09191015A (ja) * 1996-01-11 1997-07-22 Canon Inc 熱処理装置
JPH1071562A (ja) * 1996-05-10 1998-03-17 Canon Inc 化学機械研磨装置および方法
KR100264228B1 (ko) 1996-05-10 2000-12-01 미다라이 후지오 화학 기계 연마 장치 및 방법
US6217655B1 (en) 1997-01-31 2001-04-17 Applied Materials, Inc. Stand-off pad for supporting a wafer on a substrate support chuck
US6063202A (en) * 1997-09-26 2000-05-16 Novellus Systems, Inc. Apparatus for backside and edge exclusion of polymer film during chemical vapor deposition
US6215642B1 (en) 1999-03-11 2001-04-10 Nikon Corporation Of Japan Vacuum compatible, deformable electrostatic chuck with high thermal conductivity
US6264467B1 (en) * 1999-04-14 2001-07-24 Applied Materials, Inc. Micro grooved support surface for reducing substrate wear and slip formation
TW467802B (en) * 1999-10-12 2001-12-11 Hunatech Co Ltd Conditioner for polishing pad and method for manufacturing the same
US6353271B1 (en) 1999-10-29 2002-03-05 Euv, Llc Extreme-UV scanning wafer and reticle stages
WO2001056074A1 (en) 2000-01-28 2001-08-02 Hitachi Tokyo Electronics Co., Ltd. Wafer chuck, exposure system, and method of manufacturing semiconductor device
JP3859937B2 (ja) 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
US6717159B2 (en) 2000-10-18 2004-04-06 Nikon Corporation Low distortion kinematic reticle support
KR100422444B1 (ko) 2001-05-29 2004-03-12 삼성전자주식회사 정전 척에 설치되는 웨이퍼 공간 지지장치 및 그 제조방법
KR20120045040A (ko) 2002-12-20 2012-05-08 맷슨 테크날러지 캐나다 인코퍼레이티드 피가공물 지지 방법
KR100753302B1 (ko) * 2004-03-25 2007-08-29 이비덴 가부시키가이샤 진공 척, 흡착판, 연마 장치 및 반도체 웨이퍼의 제조 방법
US7150677B2 (en) 2004-09-22 2006-12-19 Mitsubishi Materials Corporation CMP conditioner
JP4049172B2 (ja) 2005-07-13 2008-02-20 住友電気工業株式会社 ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ
JP4756583B2 (ja) 2005-08-30 2011-08-24 株式会社東京精密 研磨パッド、パッドドレッシング評価方法、及び研磨装置
EP1772901B1 (en) * 2005-10-07 2012-07-25 Rohm and Haas Electronic Materials, L.L.C. Wafer holding article and method for semiconductor processing
US8057633B2 (en) * 2006-03-28 2011-11-15 Tokyo Electron Limited Post-etch treatment system for removing residue on a substrate
NL1031985C2 (nl) * 2006-06-12 2007-12-13 Xycarb Ceramics B V Werkwijze voor het vervaardigen van een inrichting voor het ondersteunen van een substraat tijdens de vervaardiging van halfgeleider-componenten alsmede een dergelijke inrichting.
WO2007145505A1 (en) * 2006-06-12 2007-12-21 Xycarb Ceramics B.V. Method for manufacturing a device for supporting a substrate during the manufacture of semiconductor components, as well as such a device
US20080100812A1 (en) 2006-10-26 2008-05-01 Nikon Corporation Immersion lithography system and method having a wafer chuck made of a porous material
JP5099476B2 (ja) 2006-12-28 2012-12-19 株式会社ニコン 清掃装置及び清掃システム、パターン形成装置、清掃方法及び露光方法、並びにデバイス製造方法
JP5018249B2 (ja) 2007-06-04 2012-09-05 株式会社ニコン クリーニング装置、クリーニング方法、露光装置、及びデバイス製造方法
JP2010153407A (ja) 2008-12-23 2010-07-08 Nikon Corp 清掃方法及び装置、並びに露光方法及び装置
JP5402391B2 (ja) 2009-01-27 2014-01-29 信越化学工業株式会社 半導体用合成石英ガラス基板の加工方法
NL2004153A (en) 2009-02-24 2010-08-25 Asml Netherlands Bv Lithographic apparatus, a method for removing material of one or more protrusions on a support surface, and an article support system.
US20100330890A1 (en) 2009-06-30 2010-12-30 Zine-Eddine Boutaghou Polishing pad with array of fluidized gimballed abrasive members
JP5810517B2 (ja) 2010-12-02 2015-11-11 富士電機株式会社 吸着装置および吸着方法
JP2013095973A (ja) 2011-11-02 2013-05-20 Tocalo Co Ltd 半導体製造装置用部材
KR102135466B1 (ko) * 2011-12-16 2020-07-17 브룩스 오토메이션 인코퍼레이티드 이송 장치
CN104081285B (zh) 2012-02-03 2017-06-13 Asml荷兰有限公司 衬底保持器和制造衬底保持器的方法
JP6085152B2 (ja) 2012-11-22 2017-02-22 日本特殊陶業株式会社 真空チャック
US20140184003A1 (en) 2012-12-31 2014-07-03 Cascade Microtech, Inc. Systems and methods for rotational alignment of a device under test
JP6034717B2 (ja) 2013-02-22 2016-11-30 株式会社荏原製作所 ドレッサの研磨部材上の摺動距離分布の取得方法、ドレッサの研磨部材上の摺動ベクトル分布の取得方法、および研磨装置
JP2014128877A (ja) 2014-03-03 2014-07-10 Femutekku:Kk 表面加工装置及び方法
NL2014516A (en) * 2014-04-30 2016-03-08 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
JP2016058675A (ja) 2014-09-12 2016-04-21 株式会社東芝 研磨装置および半導体ウェハの研磨方法
JP2017537480A (ja) 2014-11-23 2017-12-14 エム キューブド テクノロジーズＭ Ｃｕｂｅｄ Ｔｅｃｈｎｏｌｏｇｉｅｓ ウェハピンチャックの製造及び補修

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000061842A (ja) 1998-08-18 2000-02-29 Toshiba Mach Co Ltd 研磨装置
JP2002057209A (ja) 2000-06-01 2002-02-22 Tokyo Electron Ltd 枚葉式処理装置および枚葉式処理方法
JP2008198843A (ja) 2007-02-14 2008-08-28 Tokyo Electron Ltd 基板載置台及びその表面処理方法
JP2009214271A (ja) 2008-03-12 2009-09-24 Tosoh Corp 研磨装置用の研磨工具および研磨方法
JP2018511185A (ja) 2015-02-23 2018-04-19 エム キューブド テクノロジーズ, インコーポレーテッドM Cubed Technologies, Inc. 静電チャック用薄膜電極

Also Published As

Publication number Publication date
US10790181B2 (en) 2020-09-29
WO2017030873A1 (en) 2017-02-23
US20180122684A1 (en) 2018-05-03
EP3334566A1 (en) 2018-06-20
EP3334566A4 (en) 2019-06-19
JP2018526822A (ja) 2018-09-13
EP3334566B1 (en) 2021-11-24

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