JP7041051B2 - 摩擦が低減された支持表面を特徴とするウエハチャック - Google Patents
摩擦が低減された支持表面を特徴とするウエハチャック Download PDFInfo
- Publication number
- JP7041051B2 JP7041051B2 JP2018507638A JP2018507638A JP7041051B2 JP 7041051 B2 JP7041051 B2 JP 7041051B2 JP 2018507638 A JP2018507638 A JP 2018507638A JP 2018507638 A JP2018507638 A JP 2018507638A JP 7041051 B2 JP7041051 B2 JP 7041051B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer chuck
- wafer
- wrapping tool
- chuck
- wrapping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 235000012489 doughnuts Nutrition 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 77
- 238000012545 processing Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 14
- 230000003746 surface roughness Effects 0.000 description 11
- 238000013461 design Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 230000000284 resting effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/14—Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B31/00—Chucks; Expansion mandrels; Adaptations thereof for remote control
- B23B31/02—Chucks
- B23B31/24—Chucks characterised by features relating primarily to remote control of the gripping means
- B23B31/28—Chucks characterised by features relating primarily to remote control of the gripping means using electric or magnetic means in the chuck
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B31/00—Chucks; Expansion mandrels; Adaptations thereof for remote control
- B23B31/02—Chucks
- B23B31/24—Chucks characterised by features relating primarily to remote control of the gripping means
- B23B31/30—Chucks characterised by features relating primarily to remote control of the gripping means using fluid-pressure means in the chuck
- B23B31/307—Vacuum chucks
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562205425P | 2015-08-14 | 2015-08-14 | |
| US62/205,425 | 2015-08-14 | ||
| PCT/US2016/046436 WO2017030873A1 (en) | 2015-08-14 | 2016-08-10 | Wafer chuck featuring reduced friction support surface |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018526822A JP2018526822A (ja) | 2018-09-13 |
| JP2018526822A5 JP2018526822A5 (cg-RX-API-DMAC7.html) | 2021-05-13 |
| JP7041051B2 true JP7041051B2 (ja) | 2022-03-23 |
Family
ID=58050865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018507638A Active JP7041051B2 (ja) | 2015-08-14 | 2016-08-10 | 摩擦が低減された支持表面を特徴とするウエハチャック |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10790181B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP3334566B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP7041051B2 (cg-RX-API-DMAC7.html) |
| WO (1) | WO2017030873A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112969966B (zh) * | 2018-11-05 | 2024-12-03 | Asml控股股份有限公司 | 在硬陶瓷涂层中制造纳米脊的方法 |
| WO2025158593A1 (ja) * | 2024-01-24 | 2025-07-31 | 日本碍子株式会社 | 半導体製造装置用部材 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000061842A (ja) | 1998-08-18 | 2000-02-29 | Toshiba Mach Co Ltd | 研磨装置 |
| JP2002057209A (ja) | 2000-06-01 | 2002-02-22 | Tokyo Electron Ltd | 枚葉式処理装置および枚葉式処理方法 |
| JP2008198843A (ja) | 2007-02-14 | 2008-08-28 | Tokyo Electron Ltd | 基板載置台及びその表面処理方法 |
| JP2009214271A (ja) | 2008-03-12 | 2009-09-24 | Tosoh Corp | 研磨装置用の研磨工具および研磨方法 |
| JP2018511185A (ja) | 2015-02-23 | 2018-04-19 | エム キューブド テクノロジーズ, インコーポレーテッドM Cubed Technologies, Inc. | 静電チャック用薄膜電極 |
Family Cites Families (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4551192A (en) | 1983-06-30 | 1985-11-05 | International Business Machines Corporation | Electrostatic or vacuum pinchuck formed with microcircuit lithography |
| US4692836A (en) * | 1983-10-31 | 1987-09-08 | Toshiba Kikai Kabushiki Kaisha | Electrostatic chucks |
| US5342068A (en) * | 1993-08-26 | 1994-08-30 | Texas Instruments Incorporated | Laminar flow vacuum chuck |
| JPH07171747A (ja) | 1993-12-21 | 1995-07-11 | Ricoh Co Ltd | 研削研磨装置 |
| US5692873A (en) | 1995-03-31 | 1997-12-02 | Motorola, Inc. | Apparatus for holding a piece of semiconductor |
| JPH0936070A (ja) | 1995-07-21 | 1997-02-07 | Nippon Steel Corp | 半導体ウエハの研磨装置 |
| JPH09191015A (ja) * | 1996-01-11 | 1997-07-22 | Canon Inc | 熱処理装置 |
| JPH1071562A (ja) * | 1996-05-10 | 1998-03-17 | Canon Inc | 化学機械研磨装置および方法 |
| US6179695B1 (en) | 1996-05-10 | 2001-01-30 | Canon Kabushiki Kaisha | Chemical mechanical polishing apparatus and method |
| US6217655B1 (en) | 1997-01-31 | 2001-04-17 | Applied Materials, Inc. | Stand-off pad for supporting a wafer on a substrate support chuck |
| US6063202A (en) * | 1997-09-26 | 2000-05-16 | Novellus Systems, Inc. | Apparatus for backside and edge exclusion of polymer film during chemical vapor deposition |
| US6215642B1 (en) | 1999-03-11 | 2001-04-10 | Nikon Corporation Of Japan | Vacuum compatible, deformable electrostatic chuck with high thermal conductivity |
| US6264467B1 (en) * | 1999-04-14 | 2001-07-24 | Applied Materials, Inc. | Micro grooved support surface for reducing substrate wear and slip formation |
| US6439986B1 (en) * | 1999-10-12 | 2002-08-27 | Hunatech Co., Ltd. | Conditioner for polishing pad and method for manufacturing the same |
| US6353271B1 (en) | 1999-10-29 | 2002-03-05 | Euv, Llc | Extreme-UV scanning wafer and reticle stages |
| DE60125935T2 (de) | 2000-01-28 | 2007-08-02 | Hitachi Tokyo Electronics Co. Ltd., Ome | Wafer-spannfutter, belichtungssystem und verfahren zur herstellung eines halbleiterbauelements |
| JP3859937B2 (ja) | 2000-06-02 | 2006-12-20 | 住友大阪セメント株式会社 | 静電チャック |
| US6717159B2 (en) | 2000-10-18 | 2004-04-06 | Nikon Corporation | Low distortion kinematic reticle support |
| KR100422444B1 (ko) | 2001-05-29 | 2004-03-12 | 삼성전자주식회사 | 정전 척에 설치되는 웨이퍼 공간 지지장치 및 그 제조방법 |
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| WO2005092564A1 (ja) * | 2004-03-25 | 2005-10-06 | Ibiden Co., Ltd. | 真空チャックおよび吸着板 |
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| JP4049172B2 (ja) | 2005-07-13 | 2008-02-20 | 住友電気工業株式会社 | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ |
| JP4756583B2 (ja) | 2005-08-30 | 2011-08-24 | 株式会社東京精密 | 研磨パッド、パッドドレッシング評価方法、及び研磨装置 |
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| JP5018249B2 (ja) | 2007-06-04 | 2012-09-05 | 株式会社ニコン | クリーニング装置、クリーニング方法、露光装置、及びデバイス製造方法 |
| JP2010153407A (ja) | 2008-12-23 | 2010-07-08 | Nikon Corp | 清掃方法及び装置、並びに露光方法及び装置 |
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| NL2004153A (en) | 2009-02-24 | 2010-08-25 | Asml Netherlands Bv | Lithographic apparatus, a method for removing material of one or more protrusions on a support surface, and an article support system. |
| US20100330890A1 (en) | 2009-06-30 | 2010-12-30 | Zine-Eddine Boutaghou | Polishing pad with array of fluidized gimballed abrasive members |
| JP5810517B2 (ja) | 2010-12-02 | 2015-11-11 | 富士電機株式会社 | 吸着装置および吸着方法 |
| JP2013095973A (ja) | 2011-11-02 | 2013-05-20 | Tocalo Co Ltd | 半導体製造装置用部材 |
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| JP6085152B2 (ja) | 2012-11-22 | 2017-02-22 | 日本特殊陶業株式会社 | 真空チャック |
| US20140184003A1 (en) | 2012-12-31 | 2014-07-03 | Cascade Microtech, Inc. | Systems and methods for rotational alignment of a device under test |
| JP6034717B2 (ja) | 2013-02-22 | 2016-11-30 | 株式会社荏原製作所 | ドレッサの研磨部材上の摺動距離分布の取得方法、ドレッサの研磨部材上の摺動ベクトル分布の取得方法、および研磨装置 |
| JP2014128877A (ja) | 2014-03-03 | 2014-07-10 | Femutekku:Kk | 表面加工装置及び方法 |
| EP3137945B1 (en) * | 2014-04-30 | 2020-05-06 | ASML Netherlands B.V. | Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method |
| JP2016058675A (ja) | 2014-09-12 | 2016-04-21 | 株式会社東芝 | 研磨装置および半導体ウェハの研磨方法 |
| CN107206567B (zh) * | 2014-11-23 | 2020-12-29 | M丘比德技术公司 | 晶片针钉卡盘制造和修理 |
-
2016
- 2016-08-10 US US15/567,935 patent/US10790181B2/en active Active
- 2016-08-10 JP JP2018507638A patent/JP7041051B2/ja active Active
- 2016-08-10 WO PCT/US2016/046436 patent/WO2017030873A1/en not_active Ceased
- 2016-08-10 EP EP16837531.9A patent/EP3334566B1/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000061842A (ja) | 1998-08-18 | 2000-02-29 | Toshiba Mach Co Ltd | 研磨装置 |
| JP2002057209A (ja) | 2000-06-01 | 2002-02-22 | Tokyo Electron Ltd | 枚葉式処理装置および枚葉式処理方法 |
| JP2008198843A (ja) | 2007-02-14 | 2008-08-28 | Tokyo Electron Ltd | 基板載置台及びその表面処理方法 |
| JP2009214271A (ja) | 2008-03-12 | 2009-09-24 | Tosoh Corp | 研磨装置用の研磨工具および研磨方法 |
| JP2018511185A (ja) | 2015-02-23 | 2018-04-19 | エム キューブド テクノロジーズ, インコーポレーテッドM Cubed Technologies, Inc. | 静電チャック用薄膜電極 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017030873A1 (en) | 2017-02-23 |
| US20180122684A1 (en) | 2018-05-03 |
| EP3334566B1 (en) | 2021-11-24 |
| EP3334566A4 (en) | 2019-06-19 |
| EP3334566A1 (en) | 2018-06-20 |
| JP2018526822A (ja) | 2018-09-13 |
| US10790181B2 (en) | 2020-09-29 |
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