JP7038559B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP7038559B2
JP7038559B2 JP2018018564A JP2018018564A JP7038559B2 JP 7038559 B2 JP7038559 B2 JP 7038559B2 JP 2018018564 A JP2018018564 A JP 2018018564A JP 2018018564 A JP2018018564 A JP 2018018564A JP 7038559 B2 JP7038559 B2 JP 7038559B2
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region
insulating film
semiconductor device
manufacturing
misfet
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JP2019135757A (ja
JP2019135757A5 (cg-RX-API-DMAC7.html
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真一郎 阿部
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2018018564A priority Critical patent/JP7038559B2/ja
Priority to US16/243,809 priority patent/US11024639B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2018018564A 2018-02-05 2018-02-05 半導体装置の製造方法 Active JP7038559B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018018564A JP7038559B2 (ja) 2018-02-05 2018-02-05 半導体装置の製造方法
US16/243,809 US11024639B2 (en) 2018-02-05 2019-01-09 Method of manufacturing semiconductor device

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JP2018018564A JP7038559B2 (ja) 2018-02-05 2018-02-05 半導体装置の製造方法

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JP2019135757A JP2019135757A (ja) 2019-08-15
JP2019135757A5 JP2019135757A5 (cg-RX-API-DMAC7.html) 2020-08-27
JP7038559B2 true JP7038559B2 (ja) 2022-03-18

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022065681A (ja) * 2020-10-16 2022-04-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20230061138A1 (en) * 2021-09-02 2023-03-02 Mediatek Inc. Semiconductor device structure and method of forming the same

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269361A (ja) 1999-03-15 2000-09-29 Nec Corp 不揮発性半導体記憶装置およびその製造方法
JP2002246570A (ja) 2001-02-13 2002-08-30 Sharp Corp Ｍｆｍｏｓ／ｍｆｍｓ不揮発性メモリトランジスタおよびその製造方法
JP2003100896A (ja) 2001-09-25 2003-04-04 Toshiba Corp 半導体装置及びその製造方法
JP2004103902A (ja) 2002-09-11 2004-04-02 Sony Corp 不揮発性半導体メモリ装置、および、その製造方法
JP2005116582A (ja) 2003-10-03 2005-04-28 Renesas Technology Corp 半導体装置およびその製造方法
JP2010245160A (ja) 2009-04-02 2010-10-28 Renesas Electronics Corp 半導体装置の製造方法
JP2011124256A (ja) 2009-12-08 2011-06-23 Renesas Electronics Corp 半導体装置
JP2012156237A (ja) 2011-01-25 2012-08-16 Toshiba Corp 半導体記憶装置の製造方法、及び半導体記憶装置
JP2017045793A (ja) 2015-08-25 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2017523595A (ja) 2015-03-09 2017-08-17 サイプレス セミコンダクター コーポレーション Оｎｏスタックの形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05218355A (ja) * 1992-02-05 1993-08-27 Seiko Epson Corp Ｍｉｓ型半導体装置及びその製造方法
JPH0992729A (ja) * 1995-09-22 1997-04-04 Mitsubishi Electric Corp 半導体装置及び半導体装置の製造方法
US6268266B1 (en) * 1999-10-22 2001-07-31 United Microelectronics Corp. Method for forming enhanced FOX region of low voltage device in high voltage process
JP4451594B2 (ja) 2002-12-19 2010-04-14 株式会社ルネサステクノロジ 半導体集積回路装置及びその製造方法
US6906387B1 (en) * 2003-10-15 2005-06-14 Altera Corporation Method for implementing electro-static discharge protection in silicon-on-insulator devices
JP5153164B2 (ja) 2007-03-07 2013-02-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269361A (ja) 1999-03-15 2000-09-29 Nec Corp 不揮発性半導体記憶装置およびその製造方法
JP2002246570A (ja) 2001-02-13 2002-08-30 Sharp Corp Ｍｆｍｏｓ／ｍｆｍｓ不揮発性メモリトランジスタおよびその製造方法
JP2003100896A (ja) 2001-09-25 2003-04-04 Toshiba Corp 半導体装置及びその製造方法
JP2004103902A (ja) 2002-09-11 2004-04-02 Sony Corp 不揮発性半導体メモリ装置、および、その製造方法
JP2005116582A (ja) 2003-10-03 2005-04-28 Renesas Technology Corp 半導体装置およびその製造方法
JP2010245160A (ja) 2009-04-02 2010-10-28 Renesas Electronics Corp 半導体装置の製造方法
JP2011124256A (ja) 2009-12-08 2011-06-23 Renesas Electronics Corp 半導体装置
JP2012156237A (ja) 2011-01-25 2012-08-16 Toshiba Corp 半導体記憶装置の製造方法、及び半導体記憶装置
JP2017523595A (ja) 2015-03-09 2017-08-17 サイプレス セミコンダクター コーポレーション Оｎｏスタックの形成方法
JP2017045793A (ja) 2015-08-25 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

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US11024639B2 (en) 2021-06-01
US20190244968A1 (en) 2019-08-08
JP2019135757A (ja) 2019-08-15

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