JP2019135757A5 - - Google Patents
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- JP2019135757A5 JP2019135757A5 JP2018018564A JP2018018564A JP2019135757A5 JP 2019135757 A5 JP2019135757 A5 JP 2019135757A5 JP 2018018564 A JP2018018564 A JP 2018018564A JP 2018018564 A JP2018018564 A JP 2018018564A JP 2019135757 A5 JP2019135757 A5 JP 2019135757A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing
- region
- misfet
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 38
- 238000004519 manufacturing process Methods 0.000 claims 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 16
- 238000000034 method Methods 0.000 claims 8
- 229910052757 nitrogen Inorganic materials 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 239000012535 impurity Substances 0.000 claims 3
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018018564A JP7038559B2 (ja) | 2018-02-05 | 2018-02-05 | 半導体装置の製造方法 |
| US16/243,809 US11024639B2 (en) | 2018-02-05 | 2019-01-09 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018018564A JP7038559B2 (ja) | 2018-02-05 | 2018-02-05 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019135757A JP2019135757A (ja) | 2019-08-15 |
| JP2019135757A5 true JP2019135757A5 (cg-RX-API-DMAC7.html) | 2020-08-27 |
| JP7038559B2 JP7038559B2 (ja) | 2022-03-18 |
Family
ID=67476906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018018564A Active JP7038559B2 (ja) | 2018-02-05 | 2018-02-05 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US11024639B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP7038559B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022065681A (ja) * | 2020-10-16 | 2022-04-28 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US20230061138A1 (en) * | 2021-09-02 | 2023-03-02 | Mediatek Inc. | Semiconductor device structure and method of forming the same |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05218355A (ja) * | 1992-02-05 | 1993-08-27 | Seiko Epson Corp | Ｍｉｓ型半導体装置及びその製造方法 |
| JPH0992729A (ja) * | 1995-09-22 | 1997-04-04 | Mitsubishi Electric Corp | 半導体装置及び半導体装置の製造方法 |
| JP2000269361A (ja) * | 1999-03-15 | 2000-09-29 | Nec Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US6268266B1 (en) * | 1999-10-22 | 2001-07-31 | United Microelectronics Corp. | Method for forming enhanced FOX region of low voltage device in high voltage process |
| US20020109166A1 (en) * | 2001-02-13 | 2002-08-15 | Hsu Sheng Teng | MFMOS/MFMS non-volatile memory transistors and method of making same |
| JP3943881B2 (ja) * | 2001-09-25 | 2007-07-11 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2004103902A (ja) * | 2002-09-11 | 2004-04-02 | Sony Corp | 不揮発性半導体メモリ装置、および、その製造方法 |
| JP4451594B2 (ja) | 2002-12-19 | 2010-04-14 | 株式会社ルネサステクノロジ | 半導体集積回路装置及びその製造方法 |
| JP2005116582A (ja) * | 2003-10-03 | 2005-04-28 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| US6906387B1 (en) * | 2003-10-15 | 2005-06-14 | Altera Corporation | Method for implementing electro-static discharge protection in silicon-on-insulator devices |
| JP5153164B2 (ja) | 2007-03-07 | 2013-02-27 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2010245160A (ja) * | 2009-04-02 | 2010-10-28 | Renesas Electronics Corp | 半導体装置の製造方法 |
| JP2011124256A (ja) * | 2009-12-08 | 2011-06-23 | Renesas Electronics Corp | 半導体装置 |
| JP2012156237A (ja) * | 2011-01-25 | 2012-08-16 | Toshiba Corp | 半導体記憶装置の製造方法、及び半導体記憶装置 |
| US9218978B1 (en) * | 2015-03-09 | 2015-12-22 | Cypress Semiconductor Corporation | Method of ONO stack formation |
| JP2017045793A (ja) * | 2015-08-25 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
-
2018
- 2018-02-05 JP JP2018018564A patent/JP7038559B2/ja active Active
-
2019
- 2019-01-09 US US16/243,809 patent/US11024639B2/en active Active
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