JP7026575B2 - 電子ビーム照射方法、電子ビーム照射装置、及びプログラム - Google Patents

電子ビーム照射方法、電子ビーム照射装置、及びプログラム Download PDF

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Publication number
JP7026575B2
JP7026575B2 JP2018098298A JP2018098298A JP7026575B2 JP 7026575 B2 JP7026575 B2 JP 7026575B2 JP 2018098298 A JP2018098298 A JP 2018098298A JP 2018098298 A JP2018098298 A JP 2018098298A JP 7026575 B2 JP7026575 B2 JP 7026575B2
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pattern
electron beam
irradiation
charge
area
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JP2019204857A (ja
JP2019204857A5 (enExample
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憲昭 中山田
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Nuflare Technology Inc
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Nuflare Technology Inc
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Priority to JP2018098298A priority Critical patent/JP7026575B2/ja
Priority to TW108116501A priority patent/TWI754145B/zh
Priority to KR1020190059459A priority patent/KR102238893B1/ko
Priority to US16/417,972 priority patent/US10950413B2/en
Priority to CN201910427887.5A priority patent/CN110517954B/zh
Publication of JP2019204857A publication Critical patent/JP2019204857A/ja
Publication of JP2019204857A5 publication Critical patent/JP2019204857A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cold Cathode And The Manufacture (AREA)
JP2018098298A 2018-05-22 2018-05-22 電子ビーム照射方法、電子ビーム照射装置、及びプログラム Active JP7026575B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018098298A JP7026575B2 (ja) 2018-05-22 2018-05-22 電子ビーム照射方法、電子ビーム照射装置、及びプログラム
TW108116501A TWI754145B (zh) 2018-05-22 2019-05-14 電子束照射方法、電子束照射裝置及可藉由記錄了程式的電腦讀取之非暫態性的記錄媒體
KR1020190059459A KR102238893B1 (ko) 2018-05-22 2019-05-21 전자 빔 조사 방법, 전자 빔 조사 장치 및 프로그램을 기록한 컴퓨터로 판독 가능한 비일시적인 기록 매체
US16/417,972 US10950413B2 (en) 2018-05-22 2019-05-21 Electron beam irradiation method, electron beam irradiation apparatus, and computer readable non-transitory storage medium
CN201910427887.5A CN110517954B (zh) 2018-05-22 2019-05-22 电子束照射方法、电子束照射装置及记录有程序的计算机可读的非易失性存储介质

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JP2018098298A JP7026575B2 (ja) 2018-05-22 2018-05-22 電子ビーム照射方法、電子ビーム照射装置、及びプログラム

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JP2019204857A JP2019204857A (ja) 2019-11-28
JP2019204857A5 JP2019204857A5 (enExample) 2021-05-20
JP7026575B2 true JP7026575B2 (ja) 2022-02-28

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US (1) US10950413B2 (enExample)
JP (1) JP7026575B2 (enExample)
KR (1) KR102238893B1 (enExample)
CN (1) CN110517954B (enExample)
TW (1) TWI754145B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11804361B2 (en) 2021-05-18 2023-10-31 Nuflare Technology, Inc. Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium

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JP7159970B2 (ja) * 2019-05-08 2022-10-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP7469097B2 (ja) * 2020-03-26 2024-04-16 東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社 走査電子顕微鏡および画像生成方法
JP7732882B2 (ja) 2021-12-15 2025-09-02 テクセンドフォトマスク株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
JP7740069B2 (ja) * 2022-03-11 2025-09-17 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法、荷電粒子ビーム描画装置及びプログラム

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JP2001006992A (ja) 1999-06-17 2001-01-12 Advantest Corp 電子ビーム露光方法及び装置
JP2002158167A (ja) 2000-09-05 2002-05-31 Sony Corp 露光方法及び露光装置
US20040222386A1 (en) 2003-04-29 2004-11-11 Infineon Technologies Ag Method for detecting and compensating for positional displacements in photolithographic mask units and apparatus for carrying out the method
JP2010250286A (ja) 2009-03-23 2010-11-04 Toshiba Corp フォトマスク、半導体装置、荷電ビーム描画装置
JP2011040450A (ja) 2009-08-07 2011-02-24 Nuflare Technology Inc 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2011108968A (ja) 2009-11-20 2011-06-02 Nuflare Technology Inc 荷電粒子ビーム描画装置およびその帯電効果補正方法
JP2014183098A (ja) 2013-03-18 2014-09-29 Dainippon Printing Co Ltd 荷電粒子線照射位置の補正プログラム、荷電粒子線照射位置の補正量演算装置、荷電粒子線照射システム、荷電粒子線照射位置の補正方法
JP2014225428A (ja) 2013-04-24 2014-12-04 キヤノン株式会社 荷電粒子線照射装置、荷電粒子線の照射方法及び物品の製造方法
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JP2001006992A (ja) 1999-06-17 2001-01-12 Advantest Corp 電子ビーム露光方法及び装置
JP2002158167A (ja) 2000-09-05 2002-05-31 Sony Corp 露光方法及び露光装置
US20040222386A1 (en) 2003-04-29 2004-11-11 Infineon Technologies Ag Method for detecting and compensating for positional displacements in photolithographic mask units and apparatus for carrying out the method
JP2010250286A (ja) 2009-03-23 2010-11-04 Toshiba Corp フォトマスク、半導体装置、荷電ビーム描画装置
JP2011040450A (ja) 2009-08-07 2011-02-24 Nuflare Technology Inc 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2011108968A (ja) 2009-11-20 2011-06-02 Nuflare Technology Inc 荷電粒子ビーム描画装置およびその帯電効果補正方法
JP2014183098A (ja) 2013-03-18 2014-09-29 Dainippon Printing Co Ltd 荷電粒子線照射位置の補正プログラム、荷電粒子線照射位置の補正量演算装置、荷電粒子線照射システム、荷電粒子線照射位置の補正方法
JP2014225428A (ja) 2013-04-24 2014-12-04 キヤノン株式会社 荷電粒子線照射装置、荷電粒子線の照射方法及び物品の製造方法
WO2015045498A1 (ja) 2013-09-26 2015-04-02 株式会社 日立ハイテクノロジーズ 荷電粒子線装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11804361B2 (en) 2021-05-18 2023-10-31 Nuflare Technology, Inc. Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium

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CN110517954A (zh) 2019-11-29
US10950413B2 (en) 2021-03-16
JP2019204857A (ja) 2019-11-28
TWI754145B (zh) 2022-02-01
TW202004846A (zh) 2020-01-16
KR102238893B1 (ko) 2021-04-12
US20190362937A1 (en) 2019-11-28
KR20190133110A (ko) 2019-12-02
CN110517954B (zh) 2023-05-30

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