CN110517954B - 电子束照射方法、电子束照射装置及记录有程序的计算机可读的非易失性存储介质 - Google Patents

电子束照射方法、电子束照射装置及记录有程序的计算机可读的非易失性存储介质 Download PDF

Info

Publication number
CN110517954B
CN110517954B CN201910427887.5A CN201910427887A CN110517954B CN 110517954 B CN110517954 B CN 110517954B CN 201910427887 A CN201910427887 A CN 201910427887A CN 110517954 B CN110517954 B CN 110517954B
Authority
CN
China
Prior art keywords
pattern
electron beam
irradiation
charge
distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910427887.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN110517954A (zh
Inventor
中山田宪昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuflare Technology Inc
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Publication of CN110517954A publication Critical patent/CN110517954A/zh
Application granted granted Critical
Publication of CN110517954B publication Critical patent/CN110517954B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cold Cathode And The Manufacture (AREA)
CN201910427887.5A 2018-05-22 2019-05-22 电子束照射方法、电子束照射装置及记录有程序的计算机可读的非易失性存储介质 Active CN110517954B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018098298A JP7026575B2 (ja) 2018-05-22 2018-05-22 電子ビーム照射方法、電子ビーム照射装置、及びプログラム
JP2018-098298 2018-05-22

Publications (2)

Publication Number Publication Date
CN110517954A CN110517954A (zh) 2019-11-29
CN110517954B true CN110517954B (zh) 2023-05-30

Family

ID=68614055

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910427887.5A Active CN110517954B (zh) 2018-05-22 2019-05-22 电子束照射方法、电子束照射装置及记录有程序的计算机可读的非易失性存储介质

Country Status (5)

Country Link
US (1) US10950413B2 (enExample)
JP (1) JP7026575B2 (enExample)
KR (1) KR102238893B1 (enExample)
CN (1) CN110517954B (enExample)
TW (1) TWI754145B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7159970B2 (ja) * 2019-05-08 2022-10-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP7469097B2 (ja) * 2020-03-26 2024-04-16 東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社 走査電子顕微鏡および画像生成方法
US11804361B2 (en) 2021-05-18 2023-10-31 Nuflare Technology, Inc. Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium
JP7732882B2 (ja) 2021-12-15 2025-09-02 テクセンドフォトマスク株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
JP7740069B2 (ja) * 2022-03-11 2025-09-17 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法、荷電粒子ビーム描画装置及びプログラム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3745247A (en) * 1970-09-30 1973-07-10 Cit Alcatel A distortion meter providing polygon pattern indication of distortion level
KR20180035178A (ko) * 2016-09-28 2018-04-05 가부시키가이샤 뉴플레어 테크놀로지 전자 빔 장치 및 전자 빔의 위치 이탈 보정 방법

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3751404A (en) 1971-02-12 1973-08-07 Morton Norwich Products Inc L-prolyl-l-arginyl-l-volyl-l-tyrosyl-l-volyl-l-histidyl-l-prolyl-glycine
JPS5223551A (en) 1975-08-18 1977-02-22 Hitachi Shipbuilding Eng Co Kinetic pressure support container structure for static water pressure extruding machine
JPS51126183A (en) 1976-02-19 1976-11-04 Sony Corp Electric clock
JPS5440837A (en) 1977-09-06 1979-03-31 Nippon Steel Corp Manufacturing of steel pipe having resin-lined inner surface
GB2076841B (en) 1980-06-03 1985-06-19 Gen Electric Process for regulating the cure of silicone rubber products
JP4439038B2 (ja) * 1999-06-17 2010-03-24 株式会社アドバンテスト 電子ビーム露光方法及び装置
JP2002158167A (ja) * 2000-09-05 2002-05-31 Sony Corp 露光方法及び露光装置
DE10319370B4 (de) * 2003-04-29 2007-09-13 Infineon Technologies Ag Verfahren zum Erfassen und Kompensieren von Lageverschiebungen bei photolithographischen Maskeneinheiten
JP5063071B2 (ja) * 2006-02-14 2012-10-31 株式会社ニューフレアテクノロジー パタン作成方法及び荷電粒子ビーム描画装置
JP5063035B2 (ja) 2006-05-30 2012-10-31 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP5480496B2 (ja) 2008-03-25 2014-04-23 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP2010250286A (ja) * 2009-03-23 2010-11-04 Toshiba Corp フォトマスク、半導体装置、荷電ビーム描画装置
JP5414103B2 (ja) 2009-05-18 2014-02-12 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその描画データ処理方法
JP5480555B2 (ja) * 2009-08-07 2014-04-23 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5525798B2 (ja) * 2009-11-20 2014-06-18 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその帯電効果補正方法
JP5188529B2 (ja) * 2010-03-30 2013-04-24 株式会社日立ハイテクノロジーズ 電子ビーム照射方法、及び走査電子顕微鏡
JP5525936B2 (ja) 2010-06-30 2014-06-18 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5667848B2 (ja) 2010-11-19 2015-02-12 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5617947B2 (ja) * 2013-03-18 2014-11-05 大日本印刷株式会社 荷電粒子線照射位置の補正プログラム、荷電粒子線照射位置の補正量演算装置、荷電粒子線照射システム、荷電粒子線照射位置の補正方法
JP2014225428A (ja) * 2013-04-24 2014-12-04 キヤノン株式会社 荷電粒子線照射装置、荷電粒子線の照射方法及び物品の製造方法
DE112014007346B4 (de) * 2013-09-26 2024-05-23 Hitachi High-Tech Corporation Mit einem Strahl geladener Teilchen arbeitende Vorrichtung
JP6353229B2 (ja) 2014-01-22 2018-07-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6951922B2 (ja) 2016-09-28 2021-10-20 株式会社ニューフレアテクノロジー 荷電粒子ビーム装置及び荷電粒子ビームの位置ずれ補正方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3745247A (en) * 1970-09-30 1973-07-10 Cit Alcatel A distortion meter providing polygon pattern indication of distortion level
KR20180035178A (ko) * 2016-09-28 2018-04-05 가부시키가이샤 뉴플레어 테크놀로지 전자 빔 장치 및 전자 빔의 위치 이탈 보정 방법

Also Published As

Publication number Publication date
CN110517954A (zh) 2019-11-29
US10950413B2 (en) 2021-03-16
JP2019204857A (ja) 2019-11-28
TWI754145B (zh) 2022-02-01
TW202004846A (zh) 2020-01-16
KR102238893B1 (ko) 2021-04-12
US20190362937A1 (en) 2019-11-28
KR20190133110A (ko) 2019-12-02
JP7026575B2 (ja) 2022-02-28

Similar Documents

Publication Publication Date Title
CN110517954B (zh) 电子束照射方法、电子束照射装置及记录有程序的计算机可读的非易失性存储介质
JP6617066B2 (ja) 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP5063071B2 (ja) パタン作成方法及び荷電粒子ビーム描画装置
JP5480555B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6603108B2 (ja) 荷電粒子ビームの照射量補正用パラメータの取得方法、荷電粒子ビーム描画方法、及び荷電粒子ビーム描画装置
JP4976071B2 (ja) 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
US7750324B2 (en) Charged particle beam lithography apparatus and charged particle beam lithography method
JP6259694B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビームの照射量変調係数の取得方法
JP5443548B2 (ja) パタン作成方法及び荷電粒子ビーム描画装置
JP7516846B2 (ja) 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
US20080265174A1 (en) Charged particle beam writing apparatus and method
TWI775007B (zh) 帶電粒子束描繪裝置，帶電粒子束描繪方法及程式
TWI778337B (zh) 帶電粒子束描繪方法及帶電粒子束描繪裝置
CN111913361B (zh) 带电粒子束描绘方法以及带电粒子束描绘装置
CN115373228A (zh) 带电粒子射束描绘方法、装置及计算机可读取的记录介质
JP7740069B2 (ja) 荷電粒子ビーム描画方法、荷電粒子ビーム描画装置及びプログラム
JP5871557B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2022177801A (ja) 荷電粒子ビーム描画方法、荷電粒子ビーム描画装置及びプログラム

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant