JP7009374B2 - 樹脂組成物及びこれを含む遮光用ブラックレジスト組成物 - Google Patents
樹脂組成物及びこれを含む遮光用ブラックレジスト組成物 Download PDFInfo
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- JP7009374B2 JP7009374B2 JP2018541706A JP2018541706A JP7009374B2 JP 7009374 B2 JP7009374 B2 JP 7009374B2 JP 2018541706 A JP2018541706 A JP 2018541706A JP 2018541706 A JP2018541706 A JP 2018541706A JP 7009374 B2 JP7009374 B2 JP 7009374B2
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/045—Polysiloxanes containing less than 25 silicon atoms
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
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Description
上記合成例1で製造されたヘテロ環を含むランダム共重合体樹脂(重量平均分子量4,000)溶液を固形分の割合で100重量部、上記同一の共重合体樹脂で被覆処理されたカーボンブラック(平均粒径80nm、30%溶液)分散液を固形分の割合で200重量部、光開始剤としてそれぞれアシルフォスフィンオキシド系(商品名Lucirin TPO、バスフ社製)2重量部とオキシムエステル系(商品名Irgacure OXE 02、バスフ社製)1重量部、シリコン系界面活性剤0.5重量部、希釈溶媒としてプロピレングリコールモノメチルエーテルアセテートを用いて組成物の固形分含量が30重量部となるように希釈しポアサイズ2.0μmのPTFEメンブレンフィルターで濾過して液状のブラックレジスト樹脂組成物を得た。
上記合成例1で製造されたヘテロ環を含むランダム共重合体樹脂の代わりに、上記合成例2で製造されたヘテロ環を含むランダム共重合体樹脂(重量平均分子量3,990)溶液を用いたことを除いては、実施例1と同様に製造した。
上記合成例1で製造されたヘテロ環を含むランダム共重合体樹脂の代わりに、上記合成例3で製造されたヘテロ環を含むランダム共重合体樹脂(重量平均分子量2,860)溶液を用いたことを除いては、実施例1と同様に製造した。
上記合成例1で製造されたヘテロ環を含むランダム共重合体樹脂の代わりに、上記合成例4で製造されたヘテロ環を含むランダム共重合体樹脂(重量平均分子量4,160)溶液を用いたことを除いては、実施例1と同様に製造した。
上記合成例1で製造されたヘテロ環を含むランダム共重合体樹脂の代わりに、上記合成例5で製造されたヘテロ環を含むランダム共重合体樹脂(重量平均分子量4,710)溶液を用いたことを除いては、実施例1と同様に製造した。
本発明の合成共重合体樹脂の代わりに、ダウコーニング社製のXiameter RSN-0217シロキサン樹脂(Mw 2,500)を固形分割合で100重量部、本発明の着色分散液の代わりに、カーボンブラック(平均粒径100nm)を100重量部、光開始剤としてそれぞれアシルフォスフィンオキシド系(商品名Lucirin TPO、バスフ社製)2重量部とオキシムエステル系(商品名Irgacure OXE 02、バスフ社製)1重量部、シリコン系界面活性剤0.5重量部、希釈溶媒としてプロピレングリコールモノメチルエーテルアセテートを用いて組成物の固形分含量が30重量部となるように希釈しポアサイズ2.0μmのPTFEメンブレンフィルターで濾過して液状のブラックレジスト樹脂組成物を得た。
本発明の合成共重合体樹脂の代わりに、シグマアルドゥリチ社製のポリ(4-ビニールフェニル-co-メチルメタクリレート、Mw 8,000)アクリル共重合体を固形分割合で100重量部、本発明の着色分散液の代わりにカーボンブラック(平均粒径100nm)を100重量部、光開始剤としてそれぞれアシルフォスフィンオキシド系(商品名Lucirin TPO、バスフ社製)2重量部とオキシムエステル系(商品名Irgacure OXE02、バスフ社製)1重量部、シリコン系界面活性剤0.5重量部、希釈溶媒としてプロピレングリコールモノメチルエーテルアセテートを用いて、組成物の固形分含量が30重量部となるように希釈しポアサイズ2.0μmのPTFEメンブレンフィルターで濾過して液状のブラックレジスト樹脂組成物を得た。
ガラス基板にブラックレジスト組成物を1,000rpmの速度でスピンコーティングして膜を形成した後、ソフトベーク工程で100℃のホットプレート(Hot plate)で120秒間ベークさせて、光学式膜厚測定器(製品名:ケイメック社製ST-4000)で塗布膜の厚さを測定する。
5μm~300μm line & space 1:1間隔のフォトマスク及びG、H、I-line紫外線ランプ付きマスクアライナー(製品名:SUSS MA-6)を使用して100mJ/cm2(i-line 365nm基準、初期厚さ2.0μm基準)エネルギーを照射した後、2.38%TMAH薄いアルカリ水溶液に60秒間現像して超純水で水洗いした。こうして得られたパターン基板を230℃で30分間オーブンで加熱する。パターンを形成したシリコンウェハー又はガラス基板を電子顕微鏡で観察し、10μmパターンを形成した場合には“優秀”、10μmパターンを形成しなかったり、スカム(scum)が酷い試料に対しては“不良”と判定した。
下の式1を通して残膜率を算出した。
式1)残膜率(%)=(現像及び硬化工程後の膜厚/初期厚さ)x100
硬化後、試料を熱重量分析(機器名TGA、Perkin elmer社製)を施して常温から600℃まで10/min.の速度で昇温して温度別重量減少率(loss wt%)を測定した。この時、400℃地点で重量減少率10%未満は“優秀”、10%~40%は“普通”、40%超過は“不良”と判定した。
塗布膜を形成し硬化工程を経た後、PR剥離液(商品名LT-360)を40℃で10分間浸した後、膜厚の膨潤(swelling)の変化率を算出した。5%未満の膨潤を“優秀”とし、5%以上の膨潤の場合は“不良”と判定した。
ITO基板に塗膜を形成し硬化工程を経た後、直径1.0のアルミニウム電極を蒸着してMetal-Insulator-Metal(MIM)評価セルを製作した。誘電定数を測定するために、上記評価セルをLCR-meter(エジュラント社製4284)を使用して塗布されたレジスト膜の静電容量(C)を測定し、下記式2を通して誘電定数を求めた。
式2 C=(ε0εA)/d
塗布膜を形成し硬化工程を経た後、蒸留水に常温で72時間浸した後、膜厚の膨潤の変化率を算出した。3%未満の膨潤を“優秀”とし、3%超過の膨潤は“不良”と判定した。
塗布膜を形成し硬化工程を経た後、キスリ(Keithley 6517B)社製の高抵抗測定器を使用して面抵抗値を測定した。
塗布膜を形成し硬化工程を経た後、エックスライト(X-Rite 361T)社製のO.D.測定器を使用してO.D.値を測定した。
Claims (14)
- 上記ランダム共重合体は、分散度は1.0~10.0である、請求項1に記載の遮光用ブラックレジスト組成物。
- 上記ランダム共重合体5~30重量%;
カーボンブラック分散液2~65重量%;
光開始剤0.1~4重量%;及び
有機溶媒1~82.9重量%を含む、請求項1に記載の遮光用ブラックレジスト組成物。 - 上記カーボンブラック顔料は、カーボンブラック、チタンブラック、アニリンブラック及びペリレンブラックからなる群より選択された何れか1つ以上である、請求項1に記載の遮光用ブラックレジスト組成物。
- 上記カーボンブラック顔料は、平均粒径が20nm~200nmである、請求項1に記載の遮光用ブラックレジスト組成物。
- 上記カーボンブラック分散液は界面活性剤を更に含み、
上記界面活性剤は、陰イオン性、陽イオン性、非イオン性、両親媒性、ポリアミン系及びポリエステル系からなる群より選択された何れか1つ以上である、請求項1に記載の遮光用ブラックレジスト組成物。 - 上記界面活性剤は、遮光用ブラックレジスト組成物100重量%に対して0.01~10重量%含まれる、請求項9に記載の遮光用ブラックレジスト組成物。
- 請求項1に記載の遮光用ブラックレジスト組成物を含むディスプレイ及び半導体用層間絶縁膜。
- 請求項1に記載の遮光用ブラックレジスト組成物を含むディスプレイ及び半導体用平坦化膜。
- 請求項1に記載の遮光用ブラックレジスト組成物を含むディスプレイ及び半導体用パッシベーション絶縁膜。
- 請求項1に記載の遮光用ブラックレジスト組成物を含むOLED用遮光パターン層。
- 請求項1に記載の遮光用ブラックレジスト組成物を含むOLED用隔壁層。
- 請求項1に記載の遮光用ブラックレジスト組成物を含むタッチパネル用ブラックマトリクス。
- 請求項1に記載の遮光用ブラックレジスト組成物を含む液晶ディスプレイ用ブラックマトリクス。
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PCT/KR2016/010133 WO2017142153A1 (ko) | 2016-02-19 | 2016-09-09 | 폴리실세스퀴옥산 수지 조성물 및 이를 포함하는 차광용 블랙 레지스트 조성물 |
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JP7204314B2 (ja) * | 2017-05-31 | 2023-01-16 | 東京応化工業株式会社 | 感光性組成物、硬化膜、表示装置、及びパターン化された硬化膜の形成方法 |
CN109233294B (zh) * | 2018-08-28 | 2020-04-24 | 淮阴工学院 | 有机硅介微孔超低介电薄膜及其制备方法 |
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KR20200099630A (ko) | 2019-02-14 | 2020-08-25 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4161435B2 (ja) | 1998-12-03 | 2008-10-08 | 株式会社Ihi | 溶射皮膜の膜厚計測方法 |
JP2008242078A (ja) | 2007-03-27 | 2008-10-09 | Jsr Corp | 着色層形成用感放射線性組成物、カラーフィルタおよびカラー液晶表示素子 |
JP2009167325A (ja) | 2008-01-17 | 2009-07-30 | Nippon Steel Chem Co Ltd | シラノール基含有硬化性籠型シルセスキオキサン化合物およびこれを用いた共重合体並びにそれらの製造方法 |
JP2009263522A (ja) | 2008-04-25 | 2009-11-12 | Shin Etsu Chem Co Ltd | ポリオルガノシロキサン化合物、これを含む樹脂組成物及びこれらのパターン形成方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04161435A (ja) * | 1990-10-24 | 1992-06-04 | Kansai Paint Co Ltd | ガラス繊維質用硬化性シリコン樹脂組成物及びその硬化物 |
KR20060020830A (ko) * | 2004-09-01 | 2006-03-07 | 삼성코닝 주식회사 | 계면활성제를 템플릿으로 이용한 저유전성 메조포러스박막의 제조방법 |
KR101202955B1 (ko) * | 2004-12-31 | 2012-11-19 | 삼성코닝정밀소재 주식회사 | 다공성 나노 입자를 포함하는 저유전 박막 형성용 조성물및 이를 이용한 저유전 박막의 제조방법 |
KR20100131312A (ko) * | 2009-06-05 | 2010-12-15 | 한국과학기술연구원 | 폴리플루오로계실세스퀴옥산 및 그의 제조방법 |
KR101820087B1 (ko) * | 2011-07-19 | 2018-01-18 | 주식회사 동진쎄미켐 | 광경화형 수지 조성물 |
US9341946B2 (en) * | 2012-05-25 | 2016-05-17 | Lg Chem, Ltd. | Photosensitive resin composition, pattern formed using same and display panel comprising same |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4161435B2 (ja) | 1998-12-03 | 2008-10-08 | 株式会社Ihi | 溶射皮膜の膜厚計測方法 |
JP2008242078A (ja) | 2007-03-27 | 2008-10-09 | Jsr Corp | 着色層形成用感放射線性組成物、カラーフィルタおよびカラー液晶表示素子 |
JP2009167325A (ja) | 2008-01-17 | 2009-07-30 | Nippon Steel Chem Co Ltd | シラノール基含有硬化性籠型シルセスキオキサン化合物およびこれを用いた共重合体並びにそれらの製造方法 |
JP2009263522A (ja) | 2008-04-25 | 2009-11-12 | Shin Etsu Chem Co Ltd | ポリオルガノシロキサン化合物、これを含む樹脂組成物及びこれらのパターン形成方法 |
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