JP7003344B2 - 可変容量素子 - Google Patents

可変容量素子 Download PDF

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Publication number
JP7003344B2
JP7003344B2 JP2021560933A JP2021560933A JP7003344B2 JP 7003344 B2 JP7003344 B2 JP 7003344B2 JP 2021560933 A JP2021560933 A JP 2021560933A JP 2021560933 A JP2021560933 A JP 2021560933A JP 7003344 B2 JP7003344 B2 JP 7003344B2
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Japan
Prior art keywords
electrode
container
gas
flow rate
plasma
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Expired - Fee Related
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JP2021560933A
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English (en)
Japanese (ja)
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JPWO2021156910A1 (https=
Inventor
宗 西岡
真悟 山浦
研悟 西本
皓貴 内藤
泰弘 西岡
尚史 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of JPWO2021156910A1 publication Critical patent/JPWO2021156910A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Optical Transform (AREA)
  • Plasma Technology (AREA)
JP2021560933A 2020-02-03 2020-02-03 可変容量素子 Expired - Fee Related JP7003344B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/003910 WO2021156910A1 (ja) 2020-02-03 2020-02-03 可変容量素子

Publications (2)

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JPWO2021156910A1 JPWO2021156910A1 (https=) 2021-08-12
JP7003344B2 true JP7003344B2 (ja) 2022-01-20

Family

ID=77199848

Family Applications (1)

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JP2021560933A Expired - Fee Related JP7003344B2 (ja) 2020-02-03 2020-02-03 可変容量素子

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JP (1) JP7003344B2 (https=)
WO (1) WO2021156910A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002206167A (ja) 2000-12-28 2002-07-26 Toshiba Corp プラズマコーティング装置及びプラズマコーティング方法
JP2002540582A (ja) 1999-03-31 2002-11-26 ラム リサーチ コーポレーション 可変高周波結合を有するコイルを備えたプラズマ・プロセッサ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06243990A (ja) * 1992-12-16 1994-09-02 Hitachi Ltd インピーダンス整合方法及びその装置
JPH07169590A (ja) * 1993-09-16 1995-07-04 Fujitsu Ltd 電子密度の測定方法及びその装置及び電子密度の制御装置及びプラズマ処理装置
JPH08115902A (ja) * 1994-10-14 1996-05-07 Fujitsu Ltd 半導体製造装置及び半導体装置の製造方法
JPH08236504A (ja) * 1995-02-27 1996-09-13 Fujitsu Ltd 半導体製造装置及び半導体装置の製造方法
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2013098177A (ja) * 2011-10-31 2013-05-20 Semes Co Ltd 基板処理装置及びインピーダンスマッチング方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002540582A (ja) 1999-03-31 2002-11-26 ラム リサーチ コーポレーション 可変高周波結合を有するコイルを備えたプラズマ・プロセッサ
JP2002206167A (ja) 2000-12-28 2002-07-26 Toshiba Corp プラズマコーティング装置及びプラズマコーティング方法

Also Published As

Publication number Publication date
WO2021156910A1 (ja) 2021-08-12
JPWO2021156910A1 (https=) 2021-08-12

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