JPWO2021156910A1 - - Google Patents

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Publication number
JPWO2021156910A1
JPWO2021156910A1 JP2021560933A JP2021560933A JPWO2021156910A1 JP WO2021156910 A1 JPWO2021156910 A1 JP WO2021156910A1 JP 2021560933 A JP2021560933 A JP 2021560933A JP 2021560933 A JP2021560933 A JP 2021560933A JP WO2021156910 A1 JPWO2021156910 A1 JP WO2021156910A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021560933A
Other languages
Japanese (ja)
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JP7003344B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPWO2021156910A1 publication Critical patent/JPWO2021156910A1/ja
Application granted granted Critical
Publication of JP7003344B2 publication Critical patent/JP7003344B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Optical Transform (AREA)
  • Plasma Technology (AREA)
JP2021560933A 2020-02-03 2020-02-03 可変容量素子 Expired - Fee Related JP7003344B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/003910 WO2021156910A1 (ja) 2020-02-03 2020-02-03 可変容量素子

Publications (2)

Publication Number Publication Date
JPWO2021156910A1 true JPWO2021156910A1 (https=) 2021-08-12
JP7003344B2 JP7003344B2 (ja) 2022-01-20

Family

ID=77199848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021560933A Expired - Fee Related JP7003344B2 (ja) 2020-02-03 2020-02-03 可変容量素子

Country Status (2)

Country Link
JP (1) JP7003344B2 (https=)
WO (1) WO2021156910A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06243990A (ja) * 1992-12-16 1994-09-02 Hitachi Ltd インピーダンス整合方法及びその装置
JPH07169590A (ja) * 1993-09-16 1995-07-04 Fujitsu Ltd 電子密度の測定方法及びその装置及び電子密度の制御装置及びプラズマ処理装置
JPH08115902A (ja) * 1994-10-14 1996-05-07 Fujitsu Ltd 半導体製造装置及び半導体装置の製造方法
JPH08236504A (ja) * 1995-02-27 1996-09-13 Fujitsu Ltd 半導体製造装置及び半導体装置の製造方法
JP2002206167A (ja) * 2000-12-28 2002-07-26 Toshiba Corp プラズマコーティング装置及びプラズマコーティング方法
JP2002540582A (ja) * 1999-03-31 2002-11-26 ラム リサーチ コーポレーション 可変高周波結合を有するコイルを備えたプラズマ・プロセッサ
JP2013098177A (ja) * 2011-10-31 2013-05-20 Semes Co Ltd 基板処理装置及びインピーダンスマッチング方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06243990A (ja) * 1992-12-16 1994-09-02 Hitachi Ltd インピーダンス整合方法及びその装置
JPH07169590A (ja) * 1993-09-16 1995-07-04 Fujitsu Ltd 電子密度の測定方法及びその装置及び電子密度の制御装置及びプラズマ処理装置
JPH08115902A (ja) * 1994-10-14 1996-05-07 Fujitsu Ltd 半導体製造装置及び半導体装置の製造方法
JPH08236504A (ja) * 1995-02-27 1996-09-13 Fujitsu Ltd 半導体製造装置及び半導体装置の製造方法
JP2002540582A (ja) * 1999-03-31 2002-11-26 ラム リサーチ コーポレーション 可変高周波結合を有するコイルを備えたプラズマ・プロセッサ
JP2002206167A (ja) * 2000-12-28 2002-07-26 Toshiba Corp プラズマコーティング装置及びプラズマコーティング方法
JP2013098177A (ja) * 2011-10-31 2013-05-20 Semes Co Ltd 基板処理装置及びインピーダンスマッチング方法

Also Published As

Publication number Publication date
JP7003344B2 (ja) 2022-01-20
WO2021156910A1 (ja) 2021-08-12

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