JP6993090B2 - Cmp研磨パッドのための研磨くず除去溝 - Google Patents

Cmp研磨パッドのための研磨くず除去溝 Download PDF

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Publication number
JP6993090B2
JP6993090B2 JP2017056833A JP2017056833A JP6993090B2 JP 6993090 B2 JP6993090 B2 JP 6993090B2 JP 2017056833 A JP2017056833 A JP 2017056833A JP 2017056833 A JP2017056833 A JP 2017056833A JP 6993090 B2 JP6993090 B2 JP 6993090B2
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Japan
Prior art keywords
polishing
groove
grooves
supply
radial
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JP2017056833A
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English (en)
Japanese (ja)
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JP2017208530A5 (enExample
JP2017208530A (ja
Inventor
リー・メルボルン・クック
ユファ・トン
ジョセフ・ソー
ジェフリー・ジェームズ・ヘンドロン
パトリシア・コネル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
DuPont Electronic Materials Holding Inc
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Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, DuPont Electronic Materials Holding Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
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Publication of JP2017208530A5 publication Critical patent/JP2017208530A5/ja
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/12Lapping plates for working plane surfaces
    • B24B37/16Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
JP2017056833A 2016-03-24 2017-03-23 Cmp研磨パッドのための研磨くず除去溝 Active JP6993090B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/079,824 2016-03-24
US15/079,824 US10875146B2 (en) 2016-03-24 2016-03-24 Debris-removal groove for CMP polishing pad

Publications (3)

Publication Number Publication Date
JP2017208530A JP2017208530A (ja) 2017-11-24
JP2017208530A5 JP2017208530A5 (enExample) 2020-04-16
JP6993090B2 true JP6993090B2 (ja) 2022-01-13

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ID=59886174

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Application Number Title Priority Date Filing Date
JP2017056833A Active JP6993090B2 (ja) 2016-03-24 2017-03-23 Cmp研磨パッドのための研磨くず除去溝

Country Status (6)

Country Link
US (1) US10875146B2 (enExample)
JP (1) JP6993090B2 (enExample)
KR (1) KR102363154B1 (enExample)
CN (1) CN107225498A (enExample)
FR (1) FR3049205B1 (enExample)
TW (1) TWI773663B (enExample)

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DE102017216033A1 (de) * 2017-09-12 2019-03-14 Carl Zeiss Smt Gmbh Verfahren zum Bearbeiten eines Werkstücks bei der Herstellung eines optischen Elements
CN108214285A (zh) * 2018-01-25 2018-06-29 成都时代立夫科技有限公司 一种化学机械抛光垫
JP7026942B2 (ja) * 2018-04-26 2022-03-01 丸石産業株式会社 研磨パッド用の下敷及び該下敷を使用する研磨方法
KR102059647B1 (ko) * 2018-06-21 2019-12-26 에스케이씨 주식회사 슬러리 유동성이 향상된 연마패드 및 이의 제조방법
NL2023396A (en) * 2018-07-27 2020-01-31 Asml Netherlands Bv Tool for modifying a support surface
KR101952829B1 (ko) * 2018-08-13 2019-02-27 최유섭 금속부품의 연마가공장치 및 이를 이용한 연마가공방법
JP7178662B2 (ja) * 2019-04-10 2022-11-28 パナソニックIpマネジメント株式会社 研磨装置および研磨方法
TWI771668B (zh) 2019-04-18 2022-07-21 美商應用材料股份有限公司 Cmp期間基於溫度的原位邊緣不對稱校正
KR102674356B1 (ko) * 2019-06-19 2024-06-11 주식회사 쿠라레 연마 패드, 연마 패드의 제조 방법 및 연마 방법
CN110732983A (zh) * 2019-10-30 2020-01-31 郑州伯利森新材料科技有限公司 一种硬脆材料加工用免修整超硬砂轮及其制备方法
GB2590511B (en) * 2019-11-20 2023-10-25 Best Engineered Surface Tech Llc Hybrid CMP conditioning head
TWI826280B (zh) * 2019-11-22 2023-12-11 美商應用材料股份有限公司 在拋光墊中使用溝槽的晶圓邊緣不對稱校正
KR102746090B1 (ko) 2020-03-13 2024-12-26 삼성전자주식회사 Cmp 패드 및 이를 구비하는 화학적 기계적 연마 장치
US20210299816A1 (en) * 2020-03-25 2021-09-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp polishing pad with protruding structures having engineered open void space
KR102570825B1 (ko) * 2020-07-16 2023-08-28 한국생산기술연구원 다공성 돌출 패턴을 포함하는 연마 패드 및 이를 포함하는 연마 장치
CN114496880B (zh) * 2020-10-26 2025-07-25 昆明物理研究所 一种化学抛光夹具
CN117794687A (zh) * 2021-08-04 2024-03-29 株式会社可乐丽 抛光垫
KR102685134B1 (ko) * 2022-06-09 2024-07-15 케이피엑스케미칼 주식회사 개선된 연마속도를 갖는 연마패드 및 이를 포함하는 화학적 기계적 연마장치
KR102685136B1 (ko) * 2022-06-09 2024-07-15 케이피엑스케미칼 주식회사 개선된 연마속도를 갖는 연마패드 및 이를 포함하는 화학적 기계적 연마장치
KR20240105053A (ko) * 2022-12-28 2024-07-05 삼성전자주식회사 화학 기계적 연마 장치 및 이의 제어 방법
CN116276633B (zh) * 2023-02-13 2025-09-16 上海芯谦集成电路有限公司 一种具有透气孔的抛光垫
US20250108477A1 (en) * 2023-09-28 2025-04-03 Applied Materials, Inc. Chemical mechanical polishing edge control with pad recesses

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JP2007081322A (ja) 2005-09-16 2007-03-29 Jsr Corp 化学機械研磨パッドの製造方法
US20090311955A1 (en) 2008-03-14 2009-12-17 Nexplanar Corporation Grooved CMP pad

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JP2007081322A (ja) 2005-09-16 2007-03-29 Jsr Corp 化学機械研磨パッドの製造方法
US20090311955A1 (en) 2008-03-14 2009-12-17 Nexplanar Corporation Grooved CMP pad

Also Published As

Publication number Publication date
US10875146B2 (en) 2020-12-29
TW201800181A (zh) 2018-01-01
KR102363154B1 (ko) 2022-02-15
US20170274496A1 (en) 2017-09-28
FR3049205A1 (fr) 2017-09-29
JP2017208530A (ja) 2017-11-24
TWI773663B (zh) 2022-08-11
CN107225498A (zh) 2017-10-03
FR3049205B1 (fr) 2021-08-06
KR20170113203A (ko) 2017-10-12

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