JP2000511355A - Sof半導体ウェーハの化学・機械的平坦化法 - Google Patents
Sof半導体ウェーハの化学・機械的平坦化法Info
- Publication number
- JP2000511355A JP2000511355A JP09542775A JP54277597A JP2000511355A JP 2000511355 A JP2000511355 A JP 2000511355A JP 09542775 A JP09542775 A JP 09542775A JP 54277597 A JP54277597 A JP 54277597A JP 2000511355 A JP2000511355 A JP 2000511355A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- pad
- solution
- polishing pad
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 239000000126 substance Substances 0.000 title claims description 8
- 235000012431 wafers Nutrition 0.000 claims abstract description 151
- 238000000034 method Methods 0.000 claims abstract description 94
- 238000005498 polishing Methods 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 40
- 239000002002 slurry Substances 0.000 claims description 61
- 239000006061 abrasive grain Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 239000006193 liquid solution Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 56
- 238000009826 distribution Methods 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 229940079593 drug Drugs 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000012190 activator Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.ストップ・オン・フィーチャ半導体ウェーハのストップ・オン・フィーチャ 層から、上層を選択的に除去する化学・機械的平坦化法において、 ウェーハを研摩パッドの平坦化面上の溶液層に当接させて配置する工程と、 ウェーハと研摩パッドとの間に実質的な連続溶液膜を形成すべく、パッドま たはウェーハの少なくとも一方を比較的低い速度で互いに移動させる工程と、 溶液の所望の温度を維持しかつ研摩パッドを剛化させるべく、パッドが置か れるプラテンの温度を制御する工程からなることを特徴とする方法。 2.前記制御工程は、プラテンを約85〜105°Fの間の温度に維持すること からなることを特徴とする請求の範囲第1項に記載の方法。 3.前記制御工程は、プラテンを約89〜91°Fの間の温度に維持することか らなることを特徴とする請求の範囲第1項に記載の方法。 4.前記移動工程は、パッドを約20〜200フィート/分の速度で移動させる ことからなることを特徴とする請求の範囲第1項に記載の方法。 5.前記移動工程は、パッドを約95フィート/分の速度で移動させることから なることを特徴とする請求の範囲第1項に記載の方法。 6.前記移動工程がパッドを約95フィート/分の速度で移動させることからな り、 前記制御工程がプラテンを約89〜91°Fの間の温度に維持することから なることを特徴とする請求の範囲第1項に記載の方法。 7.前記溶液は、砥粒を含有する研摩スラリからなることを特徴とする請求の範 囲第1項に記載の方法。 8.前記溶液は、砥粒を含有しない非摩削性研摩溶液からなることを特徴とする 請求の範囲第1項に記載の方法。 9.前記研摩パッドは、砥粒が含浸されたマトリックス材料からなることを特徴 とする請求の範囲第8項に記載の方法。 10.前記移動工程は、ウェーハを10〜50rpmの速度で回転させることからな ることを特徴とする請求の範囲第2項に記載の方法。 11.前記移動工程は、ウェーハを10〜50rpmの速度で回転させることからな ることを特徴とする請求の範囲第4項に記載の方法。 12.前記上層がドープト酸化ケイ素から作られ、前記ストップ・オン・フィーチ ャ層が窒化ケイ素から作られていることを特徴とする請求の範囲第1項に記載 の方法。 13.ストップ・オン・フィーチャ半導体ウェーハのストップ・オン・フィーチャ 層から、上層を選択的に除去する化学・機械的平坦化法において、 ウェーハを研摩パッドの平坦化面上に配置する工程を有し、研摩面はウェー ハとパッドとの間の流体搬送を高めるように構成されており、 平坦化面を溶液で覆う工程と、 ウェーハと研摩パッドとの間に実質的な連続溶液膜を維持すべく、パッドま たはウェーハの少なくとも一方を比較的低い速度で互いに移動させる工程と、 溶液がウェーハ上の材料層に対して高度の選択性を呈する溶液の所望の温度 を維持しかつ研摩パッドを剛化させるべく、パッドが置かれるプラテンの温度 を制御する工程とを更に有することを特徴とする方法。 14.前記研摩パッドはスラリ溶液を保持するための複数の凹みを有し、平坦化面 は表面領域を有し、各凹みは平坦化面に開領域を形成する孔を備え、孔の開領 域の領域とパッド全体の平坦化面の領域とが一定の比率をもつように、孔が互 いに間隔を隔てて配置されていることを特徴とする請求の範囲第13項に記載 の方法。 15.前記研摩パッドは、平坦化面に形成された溝を有することを特徴とする請求 の範囲第13項に記載の方法。 16.ストップ・オン・フィーチャ層設計の1つの層から材料を選択的に除去する スラリ溶液を選択する工程を更に有することを特徴とする請求の範囲第13項 に記載の方法。 17.前記孔は、ウェーハが凹み上を通るときに凹みに隣接するスラリに低圧力領 域を創出するサイズを有し、凹み中のスラリ溶液の一部が凹みから吸引されて ウェーハと接触し、ウェーハ表面全体に実質的に一定量のスラリ溶液を分散さ せることを特徴とする請求の範囲第14項に記載の方法。 18.前記制御工程は、プラテンを約85〜105°Fの間の温度に維持すること からなることを特徴とする請求の範囲第13項に記載の方法。 19.前記制御工程は、プラテンを約89〜90°Fの間の温度に維持することか らなることを特徴とする請求の範囲第13項に記載の方法。 20.前記移動工程は、パッドを約20〜200フィート/分の速度で移動させる ことからなることを特徴とする請求の範囲第13項に記載の方法。 21.前記移動工程は、パッドを約95フィート/分の速度で移動させることから なることを特徴とする請求の範囲第13項に記載の方法。 22.前記移動工程は、ウェーハを10〜50rpmの速度で回転させることからな ることを特徴とする請求の範囲第20項に記載の方法。 23.ストップ・オン・フィーチャ半導体ウェーハのストップ・オン・フィーチャ 層から、上層を選択的に除去する化学・機械的平坦化法において、 ウェーハを研摩パッドの平坦化面上の溶液に当接させて配置する工程と、 ウェーハと研摩パッドとを互いに移動させる工程であって、ウェーハは約 10〜30rpmで回転しかつパッドは約75〜150フィート/分の速度で移 動する工程と、 パッドを約85〜95°Fの間の温度に維持する工程と、 を有することを特徴とする方法。 24.前記溶液は、砥粒を含有しない非摩削性研摩溶液からなることを特徴とする 請求の範囲第23項に記載の方法。 25.前記溶液は水酸化アンモニウムを含有していることを特徴とする請求の範囲 第24項に記載の方法。 26.前記研摩パッドには砥粒が含浸されていることを特徴とする請求の範囲第 23項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/651,896 | 1996-05-21 | ||
US08/651,896 US5893754A (en) | 1996-05-21 | 1996-05-21 | Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers |
PCT/US1997/008786 WO1997044160A1 (en) | 1996-05-21 | 1997-05-21 | Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000511355A true JP2000511355A (ja) | 2000-08-29 |
JP2000511355A5 JP2000511355A5 (ja) | 2004-08-19 |
JP4219984B2 JP4219984B2 (ja) | 2009-02-04 |
Family
ID=24614677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54277597A Expired - Fee Related JP4219984B2 (ja) | 1996-05-21 | 1997-05-21 | Sof半導体ウェーハの化学・機械的平坦化法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US5893754A (ja) |
EP (1) | EP0907460B1 (ja) |
JP (1) | JP4219984B2 (ja) |
KR (1) | KR100412165B1 (ja) |
AT (1) | ATE235347T1 (ja) |
AU (1) | AU3211697A (ja) |
DE (1) | DE69720212T2 (ja) |
WO (1) | WO1997044160A1 (ja) |
Families Citing this family (62)
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-
1996
- 1996-05-21 US US08/651,896 patent/US5893754A/en not_active Expired - Lifetime
-
1997
- 1997-05-21 DE DE69720212T patent/DE69720212T2/de not_active Expired - Lifetime
- 1997-05-21 KR KR10-1998-0709557A patent/KR100412165B1/ko not_active IP Right Cessation
- 1997-05-21 AU AU32116/97A patent/AU3211697A/en not_active Abandoned
- 1997-05-21 JP JP54277597A patent/JP4219984B2/ja not_active Expired - Fee Related
- 1997-05-21 AT AT97927723T patent/ATE235347T1/de not_active IP Right Cessation
- 1997-05-21 EP EP97927723A patent/EP0907460B1/en not_active Expired - Lifetime
- 1997-05-21 WO PCT/US1997/008786 patent/WO1997044160A1/en active IP Right Grant
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1999
- 1999-04-07 US US09/287,953 patent/US5981396A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100412165B1 (ko) | 2004-04-28 |
DE69720212D1 (de) | 2003-04-30 |
KR20000015996A (ko) | 2000-03-25 |
WO1997044160A1 (en) | 1997-11-27 |
US5981396A (en) | 1999-11-09 |
ATE235347T1 (de) | 2003-04-15 |
JP4219984B2 (ja) | 2009-02-04 |
EP0907460A1 (en) | 1999-04-14 |
DE69720212T2 (de) | 2003-12-18 |
EP0907460B1 (en) | 2003-03-26 |
US5893754A (en) | 1999-04-13 |
AU3211697A (en) | 1997-12-09 |
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