KR102363154B1 - Cmp 연마 패드용 파편-제거 홈 - Google Patents

Cmp 연마 패드용 파편-제거 홈 Download PDF

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Publication number
KR102363154B1
KR102363154B1 KR1020170036719A KR20170036719A KR102363154B1 KR 102363154 B1 KR102363154 B1 KR 102363154B1 KR 1020170036719 A KR1020170036719 A KR 1020170036719A KR 20170036719 A KR20170036719 A KR 20170036719A KR 102363154 B1 KR102363154 B1 KR 102363154B1
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South Korea
Prior art keywords
polishing
groove
feeder
grooves
radial
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Korean (ko)
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KR20170113203A (ko
Inventor
멜버른 쿡 리
통 위하
쏘 조셉
제임스 헨드론 제프리
코널 페트리샤
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
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Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/12Lapping plates for working plane surfaces
    • B24B37/16Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
KR1020170036719A 2016-03-24 2017-03-23 Cmp 연마 패드용 파편-제거 홈 Active KR102363154B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/079,824 2016-03-24
US15/079,824 US10875146B2 (en) 2016-03-24 2016-03-24 Debris-removal groove for CMP polishing pad

Publications (2)

Publication Number Publication Date
KR20170113203A KR20170113203A (ko) 2017-10-12
KR102363154B1 true KR102363154B1 (ko) 2022-02-15

Family

ID=59886174

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170036719A Active KR102363154B1 (ko) 2016-03-24 2017-03-23 Cmp 연마 패드용 파편-제거 홈

Country Status (6)

Country Link
US (1) US10875146B2 (enExample)
JP (1) JP6993090B2 (enExample)
KR (1) KR102363154B1 (enExample)
CN (1) CN107225498A (enExample)
FR (1) FR3049205B1 (enExample)
TW (1) TWI773663B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017216033A1 (de) * 2017-09-12 2019-03-14 Carl Zeiss Smt Gmbh Verfahren zum Bearbeiten eines Werkstücks bei der Herstellung eines optischen Elements
CN108214285A (zh) * 2018-01-25 2018-06-29 成都时代立夫科技有限公司 一种化学机械抛光垫
JP7026942B2 (ja) * 2018-04-26 2022-03-01 丸石産業株式会社 研磨パッド用の下敷及び該下敷を使用する研磨方法
KR102059647B1 (ko) * 2018-06-21 2019-12-26 에스케이씨 주식회사 슬러리 유동성이 향상된 연마패드 및 이의 제조방법
NL2023396A (en) * 2018-07-27 2020-01-31 Asml Netherlands Bv Tool for modifying a support surface
KR101952829B1 (ko) * 2018-08-13 2019-02-27 최유섭 금속부품의 연마가공장치 및 이를 이용한 연마가공방법
JP7178662B2 (ja) * 2019-04-10 2022-11-28 パナソニックIpマネジメント株式会社 研磨装置および研磨方法
TWI771668B (zh) 2019-04-18 2022-07-21 美商應用材料股份有限公司 Cmp期間基於溫度的原位邊緣不對稱校正
KR102674356B1 (ko) * 2019-06-19 2024-06-11 주식회사 쿠라레 연마 패드, 연마 패드의 제조 방법 및 연마 방법
CN110732983A (zh) * 2019-10-30 2020-01-31 郑州伯利森新材料科技有限公司 一种硬脆材料加工用免修整超硬砂轮及其制备方法
GB2590511B (en) * 2019-11-20 2023-10-25 Best Engineered Surface Tech Llc Hybrid CMP conditioning head
TWI826280B (zh) * 2019-11-22 2023-12-11 美商應用材料股份有限公司 在拋光墊中使用溝槽的晶圓邊緣不對稱校正
KR102746090B1 (ko) 2020-03-13 2024-12-26 삼성전자주식회사 Cmp 패드 및 이를 구비하는 화학적 기계적 연마 장치
US20210299816A1 (en) * 2020-03-25 2021-09-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp polishing pad with protruding structures having engineered open void space
KR102570825B1 (ko) * 2020-07-16 2023-08-28 한국생산기술연구원 다공성 돌출 패턴을 포함하는 연마 패드 및 이를 포함하는 연마 장치
CN114496880B (zh) * 2020-10-26 2025-07-25 昆明物理研究所 一种化学抛光夹具
CN117794687A (zh) * 2021-08-04 2024-03-29 株式会社可乐丽 抛光垫
KR102685134B1 (ko) * 2022-06-09 2024-07-15 케이피엑스케미칼 주식회사 개선된 연마속도를 갖는 연마패드 및 이를 포함하는 화학적 기계적 연마장치
KR102685136B1 (ko) * 2022-06-09 2024-07-15 케이피엑스케미칼 주식회사 개선된 연마속도를 갖는 연마패드 및 이를 포함하는 화학적 기계적 연마장치
KR20240105053A (ko) * 2022-12-28 2024-07-05 삼성전자주식회사 화학 기계적 연마 장치 및 이의 제어 방법
CN116276633B (zh) * 2023-02-13 2025-09-16 上海芯谦集成电路有限公司 一种具有透气孔的抛光垫
US20250108477A1 (en) * 2023-09-28 2025-04-03 Applied Materials, Inc. Chemical mechanical polishing edge control with pad recesses

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006156876A (ja) 2004-12-01 2006-06-15 Toyo Tire & Rubber Co Ltd 研磨パッド、研磨方法ならびに半導体デバイスの製造方法および半導体デバイス
JP2007081322A (ja) 2005-09-16 2007-03-29 Jsr Corp 化学機械研磨パッドの製造方法
US20070082587A1 (en) 2004-05-20 2007-04-12 Jsr Corporation Method of manufacturing chemical mechanical polishing pad
US20090311955A1 (en) 2008-03-14 2009-12-17 Nexplanar Corporation Grooved CMP pad
WO2013103142A1 (ja) 2012-01-06 2013-07-11 東レ株式会社 研磨パッド

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5645469A (en) 1996-09-06 1997-07-08 Advanced Micro Devices, Inc. Polishing pad with radially extending tapered channels
JPH11156699A (ja) 1997-11-25 1999-06-15 Speedfam Co Ltd 平面研磨用パッド
US6135868A (en) * 1998-02-11 2000-10-24 Applied Materials, Inc. Groove cleaning device for chemical-mechanical polishing
GB2345255B (en) 1998-12-29 2000-12-27 United Microelectronics Corp Chemical-Mechanical Polishing Pad
WO2000059680A1 (en) * 1999-03-30 2000-10-12 Nikon Corporation Polishing body, polisher, polishing method, and method for producing semiconductor device
JP2003535707A (ja) * 2000-06-19 2003-12-02 ストルエルス アクティーゼルスカブ 多ゾーン型研削及び/又は研磨シート
KR100669301B1 (ko) * 2002-06-03 2007-01-16 제이에스알 가부시끼가이샤 연마 패드 및 복층형 연마 패드
US6843711B1 (en) * 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing pad having a process-dependent groove configuration
JP4645825B2 (ja) 2004-05-20 2011-03-09 Jsr株式会社 化学機械研磨パッド及び化学機械研磨方法
KR101279819B1 (ko) * 2005-04-12 2013-06-28 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 방사-편향 연마 패드
JP2009220265A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨パッド
KR20120039523A (ko) * 2009-06-18 2012-04-25 제이에스알 가부시끼가이샤 폴리우레탄 및 그것을 함유하는 연마층 형성용 조성물, 및 화학 기계 연마용 패드 및 그것을 사용한 화학 기계 연마 방법
WO2011008918A2 (en) * 2009-07-16 2011-01-20 Cabot Microelectronics Corporation Grooved cmp polishing pad
KR20110100080A (ko) * 2010-03-03 2011-09-09 삼성전자주식회사 화학적 기계적 연마 공정용 연마 패드 및 이를 포함하는 화학적 기계적 연마 설비
JP2012106328A (ja) * 2010-03-25 2012-06-07 Toyo Tire & Rubber Co Ltd 積層研磨パッド
KR101232787B1 (ko) * 2010-08-18 2013-02-13 주식회사 엘지화학 연마 시스템용 연마 패드
US9211628B2 (en) * 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
US8968058B2 (en) * 2011-05-05 2015-03-03 Nexplanar Corporation Polishing pad with alignment feature
WO2013039181A1 (ja) * 2011-09-15 2013-03-21 東レ株式会社 研磨パッド
TWI599447B (zh) * 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的cmp拋光墊
JP2016124043A (ja) 2014-12-26 2016-07-11 東洋ゴム工業株式会社 研磨パッド

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070082587A1 (en) 2004-05-20 2007-04-12 Jsr Corporation Method of manufacturing chemical mechanical polishing pad
JP2006156876A (ja) 2004-12-01 2006-06-15 Toyo Tire & Rubber Co Ltd 研磨パッド、研磨方法ならびに半導体デバイスの製造方法および半導体デバイス
JP2007081322A (ja) 2005-09-16 2007-03-29 Jsr Corp 化学機械研磨パッドの製造方法
KR101248641B1 (ko) 2005-09-16 2013-03-28 제이에스알 가부시끼가이샤 화학적 기계적 연마 패드의 제조 방법
US20090311955A1 (en) 2008-03-14 2009-12-17 Nexplanar Corporation Grooved CMP pad
WO2013103142A1 (ja) 2012-01-06 2013-07-11 東レ株式会社 研磨パッド

Also Published As

Publication number Publication date
US10875146B2 (en) 2020-12-29
TW201800181A (zh) 2018-01-01
US20170274496A1 (en) 2017-09-28
FR3049205A1 (fr) 2017-09-29
JP6993090B2 (ja) 2022-01-13
JP2017208530A (ja) 2017-11-24
TWI773663B (zh) 2022-08-11
CN107225498A (zh) 2017-10-03
FR3049205B1 (fr) 2021-08-06
KR20170113203A (ko) 2017-10-12

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