CN107225498A - 用于cmp抛光垫的碎屑移除凹槽 - Google Patents

用于cmp抛光垫的碎屑移除凹槽 Download PDF

Info

Publication number
CN107225498A
CN107225498A CN201710180712.XA CN201710180712A CN107225498A CN 107225498 A CN107225498 A CN 107225498A CN 201710180712 A CN201710180712 A CN 201710180712A CN 107225498 A CN107225498 A CN 107225498A
Authority
CN
China
Prior art keywords
polishing
grooves
feeder
groove
polishing pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710180712.XA
Other languages
English (en)
Chinese (zh)
Inventor
L·M·库克
Y·童
J·索
J·J·亨德伦
P·康奈尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
Original Assignee
ROHM AND HAAS ELECTRONIC MATER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=59886174&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN107225498(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by ROHM AND HAAS ELECTRONIC MATER filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN107225498A publication Critical patent/CN107225498A/zh
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
CN201710180712.XA 2016-03-24 2017-03-23 用于cmp抛光垫的碎屑移除凹槽 Pending CN107225498A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/079824 2016-03-24
US15/079,824 US10875146B2 (en) 2016-03-24 2016-03-24 Debris-removal groove for CMP polishing pad

Publications (1)

Publication Number Publication Date
CN107225498A true CN107225498A (zh) 2017-10-03

Family

ID=59886174

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710180712.XA Pending CN107225498A (zh) 2016-03-24 2017-03-23 用于cmp抛光垫的碎屑移除凹槽

Country Status (6)

Country Link
US (1) US10875146B2 (enExample)
JP (1) JP6993090B2 (enExample)
KR (1) KR102363154B1 (enExample)
CN (1) CN107225498A (enExample)
FR (1) FR3049205B1 (enExample)
TW (1) TWI773663B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108214285A (zh) * 2018-01-25 2018-06-29 成都时代立夫科技有限公司 一种化学机械抛光垫
CN110732983A (zh) * 2019-10-30 2020-01-31 郑州伯利森新材料科技有限公司 一种硬脆材料加工用免修整超硬砂轮及其制备方法
CN111805433A (zh) * 2019-04-10 2020-10-23 松下知识产权经营株式会社 研磨装置以及研磨方法
CN111867781A (zh) * 2018-04-26 2020-10-30 丸石产业株式会社 研磨垫用的衬底及使用该衬底的研磨方法
CN116276633A (zh) * 2023-02-13 2023-06-23 上海芯谦集成电路有限公司 一种具有透气孔的抛光垫

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017216033A1 (de) * 2017-09-12 2019-03-14 Carl Zeiss Smt Gmbh Verfahren zum Bearbeiten eines Werkstücks bei der Herstellung eines optischen Elements
KR102059647B1 (ko) * 2018-06-21 2019-12-26 에스케이씨 주식회사 슬러리 유동성이 향상된 연마패드 및 이의 제조방법
NL2023396A (en) * 2018-07-27 2020-01-31 Asml Netherlands Bv Tool for modifying a support surface
KR101952829B1 (ko) * 2018-08-13 2019-02-27 최유섭 금속부품의 연마가공장치 및 이를 이용한 연마가공방법
TWI834195B (zh) 2019-04-18 2024-03-01 美商應用材料股份有限公司 Ｃｍｐ期間基於溫度的原位邊緣不對稱校正的電腦可讀取儲存媒體
US12186855B2 (en) * 2019-06-19 2025-01-07 Kuraray Co., Ltd. Polishing pad, method for manufacturing polishing pad, and polishing method
GB2590511B (en) * 2019-11-20 2023-10-25 Best Engineered Surface Tech Llc Hybrid CMP conditioning head
TWI826280B (zh) * 2019-11-22 2023-12-11 美商應用材料股份有限公司 在拋光墊中使用溝槽的晶圓邊緣不對稱校正
KR102746090B1 (ko) 2020-03-13 2024-12-26 삼성전자주식회사 Cmp 패드 및 이를 구비하는 화학적 기계적 연마 장치
US20210299816A1 (en) * 2020-03-25 2021-09-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp polishing pad with protruding structures having engineered open void space
KR102570825B1 (ko) * 2020-07-16 2023-08-28 한국생산기술연구원 다공성 돌출 패턴을 포함하는 연마 패드 및 이를 포함하는 연마 장치
CN114496880B (zh) * 2020-10-26 2025-07-25 昆明物理研究所 一种化学抛光夹具
WO2023013576A1 (ja) 2021-08-04 2023-02-09 株式会社クラレ 研磨パッド
KR102685134B1 (ko) * 2022-06-09 2024-07-15 케이피엑스케미칼 주식회사 개선된 연마속도를 갖는 연마패드 및 이를 포함하는 화학적 기계적 연마장치
KR102685136B1 (ko) * 2022-06-09 2024-07-15 케이피엑스케미칼 주식회사 개선된 연마속도를 갖는 연마패드 및 이를 포함하는 화학적 기계적 연마장치
KR20240105053A (ko) * 2022-12-28 2024-07-05 삼성전자주식회사 화학 기계적 연마 장치 및 이의 제어 방법
US20250108477A1 (en) * 2023-09-28 2025-04-03 Applied Materials, Inc. Chemical mechanical polishing edge control with pad recesses

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1494983A (zh) * 2002-06-03 2004-05-12 Jsr��ʽ���� 抛光垫及多层抛光垫
US6749714B1 (en) * 1999-03-30 2004-06-15 Nikon Corporation Polishing body, polisher, polishing method, and method for producing semiconductor device
CN1846940A (zh) * 2005-04-12 2006-10-18 罗门哈斯电子材料Cmp控股股份有限公司 径向倾斜的抛光垫
US7329174B2 (en) * 2004-05-20 2008-02-12 Jsr Corporation Method of manufacturing chemical mechanical polishing pad
US20090311955A1 (en) * 2008-03-14 2009-12-17 Nexplanar Corporation Grooved CMP pad

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5645469A (en) 1996-09-06 1997-07-08 Advanced Micro Devices, Inc. Polishing pad with radially extending tapered channels
JPH11156699A (ja) 1997-11-25 1999-06-15 Speedfam Co Ltd 平面研磨用パッド
US6135868A (en) * 1998-02-11 2000-10-24 Applied Materials, Inc. Groove cleaning device for chemical-mechanical polishing
GB2345255B (en) 1998-12-29 2000-12-27 United Microelectronics Corp Chemical-Mechanical Polishing Pad
EP1292428B1 (en) * 2000-06-19 2005-04-20 Struers A/S A multi-zone grinding and/or polishing sheet
US6843711B1 (en) * 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing pad having a process-dependent groove configuration
JP4645825B2 (ja) 2004-05-20 2011-03-09 Ｊｓｒ株式会社 化学機械研磨パッド及び化学機械研磨方法
JP2007081322A (ja) 2005-09-16 2007-03-29 Jsr Corp 化学機械研磨パッドの製造方法
JP4695386B2 (ja) 2004-12-01 2011-06-08 東洋ゴム工業株式会社 研磨パッド、研磨方法ならびに半導体デバイスの製造方法および半導体デバイス
JP2009220265A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨パッド
KR20120039523A (ko) * 2009-06-18 2012-04-25 제이에스알 가부시끼가이샤 폴리우레탄 및 그것을 함유하는 연마층 형성용 조성물, 및 화학 기계 연마용 패드 및 그것을 사용한 화학 기계 연마 방법
JP2012533888A (ja) * 2009-07-16 2012-12-27 キャボット マイクロエレクトロニクス コーポレイション 溝付きｃｍｐ研磨ｐａｄ
KR20110100080A (ko) * 2010-03-03 2011-09-09 삼성전자주식회사 화학적 기계적 연마 공정용 연마 패드 및 이를 포함하는 화학적 기계적 연마 설비
JP2012106328A (ja) * 2010-03-25 2012-06-07 Toyo Tire & Rubber Co Ltd 積層研磨パッド
KR101232787B1 (ko) * 2010-08-18 2013-02-13 주식회사 엘지화학 연마 시스템용 연마 패드
US9211628B2 (en) * 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
US8968058B2 (en) * 2011-05-05 2015-03-03 Nexplanar Corporation Polishing pad with alignment feature
US20140378035A1 (en) * 2011-09-15 2014-12-25 Toray Industries, Inc. Polishing pad
WO2013103142A1 (ja) 2012-01-06 2013-07-11 東レ株式会社 研磨パッド
TWI599447B (zh) * 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊
JP2016124043A (ja) 2014-12-26 2016-07-11 東洋ゴム工業株式会社 研磨パッド

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6749714B1 (en) * 1999-03-30 2004-06-15 Nikon Corporation Polishing body, polisher, polishing method, and method for producing semiconductor device
CN1494983A (zh) * 2002-06-03 2004-05-12 Jsr��ʽ���� 抛光垫及多层抛光垫
US7329174B2 (en) * 2004-05-20 2008-02-12 Jsr Corporation Method of manufacturing chemical mechanical polishing pad
CN1846940A (zh) * 2005-04-12 2006-10-18 罗门哈斯电子材料Cmp控股股份有限公司 径向倾斜的抛光垫
US20090311955A1 (en) * 2008-03-14 2009-12-17 Nexplanar Corporation Grooved CMP pad

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108214285A (zh) * 2018-01-25 2018-06-29 成都时代立夫科技有限公司 一种化学机械抛光垫
CN111867781A (zh) * 2018-04-26 2020-10-30 丸石产业株式会社 研磨垫用的衬底及使用该衬底的研磨方法
KR20210002464A (ko) * 2018-04-26 2021-01-08 마루이시 산교 가부시키가이샤 연마 패드용 깔개 및 그 깔개를 사용하는 연마방법
KR102629759B1 (ko) 2018-04-26 2024-01-25 마루이시 산교 가부시키가이샤 연마 패드용 깔개 및 그 깔개를 사용하는 연마방법
CN111805433A (zh) * 2019-04-10 2020-10-23 松下知识产权经营株式会社 研磨装置以及研磨方法
CN111805433B (zh) * 2019-04-10 2024-05-31 松下知识产权经营株式会社 研磨装置以及研磨方法
CN110732983A (zh) * 2019-10-30 2020-01-31 郑州伯利森新材料科技有限公司 一种硬脆材料加工用免修整超硬砂轮及其制备方法
CN116276633A (zh) * 2023-02-13 2023-06-23 上海芯谦集成电路有限公司 一种具有透气孔的抛光垫

Also Published As

Publication number Publication date
FR3049205B1 (fr) 2021-08-06
US20170274496A1 (en) 2017-09-28
JP2017208530A (ja) 2017-11-24
TWI773663B (zh) 2022-08-11
TW201800181A (zh) 2018-01-01
US10875146B2 (en) 2020-12-29
KR102363154B1 (ko) 2022-02-15
JP6993090B2 (ja) 2022-01-13
KR20170113203A (ko) 2017-10-12
FR3049205A1 (fr) 2017-09-29

Similar Documents

Publication Publication Date Title
TWI773663B (zh) 用於ｃｍｐ拋光墊之碎屑移除凹槽
EP0907460B1 (en) Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers
KR100471527B1 (ko) 연마체, 연마장치, 연마방법 및 반도체 소자의 제조방법
US9308620B2 (en) Permeated grooving in CMP polishing pads
KR101109160B1 (ko) 슬러리 소모량을 감소시키기 위한 홈 배열을 갖는 연마 패드
US6843711B1 (en) Chemical mechanical polishing pad having a process-dependent groove configuration
US6955587B2 (en) Grooved polishing pad and method
US20080064302A1 (en) Polishing apparatus, polishing pad, and polishing method
US20060128291A1 (en) Cmp polishing pad having grooves arranged to improve polishing medium utilization
US20130072091A1 (en) Method for the double-side polishing of a semiconductor wafer
US6974372B1 (en) Polishing pad having grooves configured to promote mixing wakes during polishing
US20050107009A1 (en) Polishing pad having slurry utilization enhancing grooves
US6951510B1 (en) Chemical mechanical polishing pad with grooves alternating between a larger groove size and a smaller groove size
CN114952609B (zh) 一种新旧抛光液含比可控的cmp抛光垫、抛光方法及其应用
US20220080550A1 (en) Polishing pad having pattern structure formed on polishing surface, polishing device including same, and method for manufacturing polishing pad
KR101455919B1 (ko) 웨이퍼 양면 연마 장치의 정반 구조

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20171003