JP6981267B2 - エッチング方法及びエッチング装置 - Google Patents

エッチング方法及びエッチング装置 Download PDF

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Publication number
JP6981267B2
JP6981267B2 JP2018005792A JP2018005792A JP6981267B2 JP 6981267 B2 JP6981267 B2 JP 6981267B2 JP 2018005792 A JP2018005792 A JP 2018005792A JP 2018005792 A JP2018005792 A JP 2018005792A JP 6981267 B2 JP6981267 B2 JP 6981267B2
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Japan
Prior art keywords
gas
etching
wafer
substrate
flow rate
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Active
Application number
JP2018005792A
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English (en)
Japanese (ja)
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JP2019125715A5 (https=
JP2019125715A (ja
Inventor
泰生 浅田
武彦 折居
健斗 鈴木
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2018005792A priority Critical patent/JP6981267B2/ja
Priority to KR1020190002798A priority patent/KR102229993B1/ko
Priority to US16/244,511 priority patent/US20190221440A1/en
Priority to TW108101455A priority patent/TWI796416B/zh
Priority to CN201910043237.0A priority patent/CN110047747B/zh
Publication of JP2019125715A publication Critical patent/JP2019125715A/ja
Publication of JP2019125715A5 publication Critical patent/JP2019125715A5/ja
Application granted granted Critical
Publication of JP6981267B2 publication Critical patent/JP6981267B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2018005792A 2018-01-17 2018-01-17 エッチング方法及びエッチング装置 Active JP6981267B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018005792A JP6981267B2 (ja) 2018-01-17 2018-01-17 エッチング方法及びエッチング装置
KR1020190002798A KR102229993B1 (ko) 2018-01-17 2019-01-09 에칭 방법 및 에칭 장치
US16/244,511 US20190221440A1 (en) 2018-01-17 2019-01-10 Etching Method and Etching Apparatus
TW108101455A TWI796416B (zh) 2018-01-17 2019-01-15 蝕刻方法及蝕刻裝置
CN201910043237.0A CN110047747B (zh) 2018-01-17 2019-01-17 蚀刻方法和蚀刻装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018005792A JP6981267B2 (ja) 2018-01-17 2018-01-17 エッチング方法及びエッチング装置

Publications (3)

Publication Number Publication Date
JP2019125715A JP2019125715A (ja) 2019-07-25
JP2019125715A5 JP2019125715A5 (https=) 2020-11-05
JP6981267B2 true JP6981267B2 (ja) 2021-12-15

Family

ID=67214216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018005792A Active JP6981267B2 (ja) 2018-01-17 2018-01-17 エッチング方法及びエッチング装置

Country Status (5)

Country Link
US (1) US20190221440A1 (https=)
JP (1) JP6981267B2 (https=)
KR (1) KR102229993B1 (https=)
CN (1) CN110047747B (https=)
TW (1) TWI796416B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7345334B2 (ja) * 2019-09-18 2023-09-15 東京エレクトロン株式会社 エッチング方法及び基板処理システム
JP7550534B2 (ja) 2020-05-15 2024-09-13 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP7312160B2 (ja) * 2020-12-28 2023-07-20 株式会社アルバック エッチング装置及びエッチング方法
TWI909053B (zh) * 2021-05-31 2025-12-21 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
WO2026075112A1 (ja) * 2024-10-02 2026-04-09 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法及びエッチング装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2548615C2 (de) 1975-10-30 1982-06-03 M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8900 Augsburg Vorrichtung zur Ansteuerung eines durch Fluiddruck, insbesondere pneumatischen Druck, betätigbaren Anlaß- und Bremsventils an einer umsteuerbaren Brennkraftmaschine
US5698070A (en) * 1991-12-13 1997-12-16 Tokyo Electron Limited Method of etching film formed on semiconductor wafer
US5888906A (en) * 1996-09-16 1999-03-30 Micron Technology, Inc. Plasmaless dry contact cleaning method using interhalogen compounds
JP2008177209A (ja) * 2007-01-16 2008-07-31 Taiyo Nippon Sanso Corp プラズマエッチング方法
DE102008037943B4 (de) * 2008-08-14 2018-04-26 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens
JP4968861B2 (ja) * 2009-03-19 2012-07-04 東京エレクトロン株式会社 基板のエッチング方法及びシステム
JP5655296B2 (ja) * 2009-12-01 2015-01-21 セントラル硝子株式会社 エッチングガス
JP6032033B2 (ja) * 2013-02-01 2016-11-24 セントラル硝子株式会社 シリコンのドライエッチング方法
MY199452A (en) 2013-02-06 2023-10-30 Evolva Sa Methods for improved production of rebaudioside d and rebaudioside m
JP6107198B2 (ja) * 2013-02-14 2017-04-05 セントラル硝子株式会社 クリーニングガス及びクリーニング方法
KR20160025591A (ko) * 2013-07-29 2016-03-08 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
JP6201496B2 (ja) * 2013-08-02 2017-09-27 セントラル硝子株式会社 Ｉｆ７由来フッ化ヨウ素化合物の回収方法及び回収装置
KR20150060069A (ko) 2013-11-25 2015-06-03 에스티엑스조선해양 주식회사 조립식 비계장치용 고정부재
JP6210039B2 (ja) * 2014-09-24 2017-10-11 セントラル硝子株式会社 付着物の除去方法及びドライエッチング方法
JP6544215B2 (ja) * 2015-01-23 2019-07-17 セントラル硝子株式会社 ドライエッチング方法

Also Published As

Publication number Publication date
KR102229993B1 (ko) 2021-03-18
TW201936994A (zh) 2019-09-16
CN110047747B (zh) 2023-05-23
US20190221440A1 (en) 2019-07-18
CN110047747A (zh) 2019-07-23
JP2019125715A (ja) 2019-07-25
KR20190088009A (ko) 2019-07-25
TWI796416B (zh) 2023-03-21

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