CN110047747B - 蚀刻方法和蚀刻装置 - Google Patents

蚀刻方法和蚀刻装置 Download PDF

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Publication number
CN110047747B
CN110047747B CN201910043237.0A CN201910043237A CN110047747B CN 110047747 B CN110047747 B CN 110047747B CN 201910043237 A CN201910043237 A CN 201910043237A CN 110047747 B CN110047747 B CN 110047747B
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China
Prior art keywords
gas
etching
wafer
substrate
silicon
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Chinese (zh)
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CN110047747A (zh
Inventor
浅田泰生
折居武彦
铃木健斗
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
CN201910043237.0A 2018-01-17 2019-01-17 蚀刻方法和蚀刻装置 Active CN110047747B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-005792 2018-01-17
JP2018005792A JP6981267B2 (ja) 2018-01-17 2018-01-17 エッチング方法及びエッチング装置

Publications (2)

Publication Number Publication Date
CN110047747A CN110047747A (zh) 2019-07-23
CN110047747B true CN110047747B (zh) 2023-05-23

Family

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Family Applications (1)

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CN201910043237.0A Active CN110047747B (zh) 2018-01-17 2019-01-17 蚀刻方法和蚀刻装置

Country Status (5)

Country Link
US (1) US20190221440A1 (https=)
JP (1) JP6981267B2 (https=)
KR (1) KR102229993B1 (https=)
CN (1) CN110047747B (https=)
TW (1) TWI796416B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7345334B2 (ja) * 2019-09-18 2023-09-15 東京エレクトロン株式会社 エッチング方法及び基板処理システム
JP7550534B2 (ja) 2020-05-15 2024-09-13 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP7312160B2 (ja) * 2020-12-28 2023-07-20 株式会社アルバック エッチング装置及びエッチング方法
TWI909053B (zh) * 2021-05-31 2025-12-21 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
WO2026075112A1 (ja) * 2024-10-02 2026-04-09 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法及びエッチング装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5698070A (en) * 1991-12-13 1997-12-16 Tokyo Electron Limited Method of etching film formed on semiconductor wafer
CN101840884A (zh) * 2009-03-19 2010-09-22 东京毅力科创株式会社 衬底的蚀刻方法以及系统
CN102648171A (zh) * 2009-12-01 2012-08-22 中央硝子株式会社 蚀刻气体
CN104340960A (zh) * 2013-08-02 2015-02-11 中央硝子株式会社 由if7生成的氟化碘化合物的回收方法及回收装置
CN104969333A (zh) * 2013-02-01 2015-10-07 中央硝子株式会社 硅的干蚀刻方法
JP2016139782A (ja) * 2015-01-23 2016-08-04 セントラル硝子株式会社 ドライエッチング方法
CN106663626A (zh) * 2014-09-24 2017-05-10 中央硝子株式会社 附着物的去除方法、干式蚀刻方法以及基板处理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2548615C2 (de) 1975-10-30 1982-06-03 M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8900 Augsburg Vorrichtung zur Ansteuerung eines durch Fluiddruck, insbesondere pneumatischen Druck, betätigbaren Anlaß- und Bremsventils an einer umsteuerbaren Brennkraftmaschine
US5888906A (en) * 1996-09-16 1999-03-30 Micron Technology, Inc. Plasmaless dry contact cleaning method using interhalogen compounds
JP2008177209A (ja) * 2007-01-16 2008-07-31 Taiyo Nippon Sanso Corp プラズマエッチング方法
DE102008037943B4 (de) * 2008-08-14 2018-04-26 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens
MY199452A (en) 2013-02-06 2023-10-30 Evolva Sa Methods for improved production of rebaudioside d and rebaudioside m
JP6107198B2 (ja) * 2013-02-14 2017-04-05 セントラル硝子株式会社 クリーニングガス及びクリーニング方法
KR20160025591A (ko) * 2013-07-29 2016-03-08 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
KR20150060069A (ko) 2013-11-25 2015-06-03 에스티엑스조선해양 주식회사 조립식 비계장치용 고정부재

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5698070A (en) * 1991-12-13 1997-12-16 Tokyo Electron Limited Method of etching film formed on semiconductor wafer
CN101840884A (zh) * 2009-03-19 2010-09-22 东京毅力科创株式会社 衬底的蚀刻方法以及系统
CN102648171A (zh) * 2009-12-01 2012-08-22 中央硝子株式会社 蚀刻气体
CN104969333A (zh) * 2013-02-01 2015-10-07 中央硝子株式会社 硅的干蚀刻方法
CN104340960A (zh) * 2013-08-02 2015-02-11 中央硝子株式会社 由if7生成的氟化碘化合物的回收方法及回收装置
CN106663626A (zh) * 2014-09-24 2017-05-10 中央硝子株式会社 附着物的去除方法、干式蚀刻方法以及基板处理装置
JP2016139782A (ja) * 2015-01-23 2016-08-04 セントラル硝子株式会社 ドライエッチング方法

Also Published As

Publication number Publication date
KR102229993B1 (ko) 2021-03-18
TW201936994A (zh) 2019-09-16
JP6981267B2 (ja) 2021-12-15
US20190221440A1 (en) 2019-07-18
CN110047747A (zh) 2019-07-23
JP2019125715A (ja) 2019-07-25
KR20190088009A (ko) 2019-07-25
TWI796416B (zh) 2023-03-21

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