JP6980116B2 - 酸化物半導体装置及びその製造方法 - Google Patents
酸化物半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 186
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 94
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 94
- 239000000463 material Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 30
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 44
- 239000000758 substrate Substances 0.000 description 40
- 150000001875 compounds Chemical class 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- 239000012535 impurity Substances 0.000 description 17
- 239000007769 metal material Substances 0.000 description 13
- 239000011810 insulating material Substances 0.000 description 8
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 206010021143 Hypoxia Diseases 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- LBJNMUFDOHXDFG-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu].[Cu] LBJNMUFDOHXDFG-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- VFWRGKJLLYDFBY-UHFFFAOYSA-N silver;hydrate Chemical compound O.[Ag].[Ag] VFWRGKJLLYDFBY-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
以下、本実施の形態1に係る酸化物半導体装置、及び、酸化物半導体装置の製造方法について説明する。まず、本実施の形態1に係る酸化物半導体装置の構成について説明をする。なお、以下の説明では、酸化物半導体装置を「半導体装置」とのみ記載することもある。
次に、本実施の形態1に係る半導体装置の製造方法について説明する。
以上のような本実施の形態1に係る酸化物半導体装置によれば、材料が酸化ガリウムと異なる材料であり、かつp型酸化物半導体層6の材料と少なくとも一部が異なる材料である酸化物層7が、n型酸化ガリウムエピタキシャル層4とp型酸化物半導体層6との間に配設されている。このような構成によれば、n型酸化ガリウムエピタキシャル層4とp型酸化物半導体層6との間のpn界面における化学反応を抑制することができるので、酸化物半導体装置の例えば耐熱性及び耐圧性などの特性の劣化を抑制することができる。
図10は、本発明の実施の形態2に係る半導体装置の構成を概略的に例示する断面図である。なお、本実施の形態2に係る半導体装置の製造方法は、実施の形態1に係る半導体装置の製造方法と同様である。
図11は、本発明の実施の形態3に係る半導体装置の構成を概略的に例示する断面図である。なお、本実施の形態2に係る半導体装置の製造方法は、実施の形態1に係る半導体装置の製造方法と同様である。
図12は、本発明の実施の形態4に係る半導体装置の構成を概略的に例示する断面図である。以下の説明においては、本実施の形態4に係る構成要素のうち、以上で説明された構成と同様の構成要素については同じ符号を付して図示し、異なる構成要素について主に説明する。
図13は、本発明の実施の形態5に係る半導体装置の構成を概略的に例示する断面図である。以下の説明においては、本実施の形態5に係る構成要素のうち、以上で説明された構成と同様の構成要素については同じ符号を付して図示し、異なる構成要素について主に説明する。
Claims (10)
- n型酸化ガリウム層と、
前記n型酸化ガリウム層の上方に配設され、ガリウムと異なる元素を主成分として有し、p型の導電性を有するp型酸化物半導体層と、
前記p型酸化物半導体層と電気的に接合された第1電極と、
前記n型酸化ガリウム層と前記p型酸化物半導体層との間に配設され、材料が酸化ガリウムと異なる材料であり、かつ前記p型酸化物半導体層の材料と少なくとも一部が異なる材料である酸化物層と
を備える、酸化物半導体装置。 - 請求項1に記載の酸化物半導体装置であって、
前記n型酸化ガリウム層の下面と電気的に接合された第2電極をさらに備え、
前記第1電極は、前記n型酸化ガリウム層の上面とも電気的に接続されている、酸化物半導体装置。 - 請求項1または請求項2に記載の酸化物半導体装置であって、
互いに離間された複数の前記p型酸化物半導体層が、前記n型酸化ガリウム層の上面に埋設された、酸化物半導体装置。 - 請求項1から請求項3のうちのいずれか1項に記載の酸化物半導体装置であって、
前記p型酸化物半導体層の材料は、Cuを含む金属酸化物である、酸化物半導体装置。 - 請求項1から請求項4のうちのいずれか1項に記載の酸化物半導体装置であって、
前記酸化物層の材料は、Al2O3を主成分とする酸化物である、酸化物半導体装置。 - 請求項1から請求項5のうちのいずれか1項に記載の酸化物半導体装置であって、
前記酸化物層の材料は、Cu及びAlを含む金属酸化物である、酸化物半導体装置。 - 請求項1から請求項6のうちのいずれか1項に記載の酸化物半導体装置であって、
前記酸化物層の膜厚は3nm以上である、酸化物半導体装置。 - 請求項1から請求項7のうちのいずれか1項に記載の酸化物半導体装置の製造方法であって、
前記酸化物層の形成温度は400℃以上である、酸化物半導体装置の製造方法。 - 請求項1に記載の酸化物半導体装置であって、
前記n型酸化ガリウム層のうち前記p型酸化物半導体層に隣接する部分と接合されたソース電極と、
前記n型酸化ガリウム層の下面と接合されたドレイン電極と
をさらに備え、
前記第1電極はゲート電極である、酸化物半導体装置。 - 請求項1に記載の酸化物半導体装置であって、
前記n型酸化ガリウム層のうち前記p型酸化物半導体層に隣接する第1部分と接合されたソース電極と、
前記n型酸化ガリウム層のうち前記p型酸化物半導体層に前記第1部分と逆側で隣接する第2部分と接合されたドレイン電極と
をさらに備え
前記第1電極は、前記ソース電極と前記ドレイン電極との間に配設されたゲート電極である、酸化物半導体装置。
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