JP2019169696A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP2019169696A JP2019169696A JP2018175270A JP2018175270A JP2019169696A JP 2019169696 A JP2019169696 A JP 2019169696A JP 2018175270 A JP2018175270 A JP 2018175270A JP 2018175270 A JP2018175270 A JP 2018175270A JP 2019169696 A JP2019169696 A JP 2019169696A
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Abstract
Description
図1に本実施形態の半導体装置100を説明する模式断面図を示す。
図3に半導体装置101を示す。
図4に半導体装置102を示す。
図5に半導体装置103を示す。
図6に半導体装置104を示す。
図7に半導体装置105を示す。
2 第2の窒化物半導体層
3 接合絶縁層
4 層間絶縁層
5 ゲート絶縁層
6 基板
7 ソースパッド
8、8a ドレイン電極
9 ゲートパッド
10 第2の絶縁層
11、11a ソース電極
12、12a ゲート電極
13 第1の絶縁層
20 第3の窒化物半導体層
21 基板
22 第1のバッファ層
23 第2のバッファ層
30 領域
40 導電性基板
50 第1導電層
60 ソースパッド
70 ゲートパッド
80 ドレイン電極
90 第2導電層
100〜105 半導体装置
Claims (19)
- 基板と、
第1の窒化物半導体層と、
前記基板と前記第1の窒化物半導体層との間にある第1の絶縁層と、
前記第1の絶縁層と前記第1の窒化物半導体層との間にあるゲート絶縁層と、
前記ゲート絶縁層と前記第1の窒化物半導体層との間にあり、前記第1の窒化物半導体層と接する第2の窒化物半導体層と、
記第1の絶縁層と前記第2の窒化物半導体層との間にあり、前記第2の窒化物半導体層に電気的に接続されるソース電極と、
前記ゲート絶縁層と前記第1の絶縁層との間にあるゲート電極と、
前記第1の窒化物半導体層に設けられ、前記第1の窒化物半導体層と電気的に接続されるドレイン電極と、
を備える半導体装置。 - 前記第1の窒化物半導体層上にある第2の絶縁層をさらに備える請求項1に記載の半導体装置。
- 前記ドレイン電極は凸部を有し、前記凸部は前記第1の窒化物半導体層に埋め込まれている請求項1または請求項2に記載の半導体装置。
- 前記ソース電極と電気的に接続し、前記第2の絶縁層上にあるソースパッドと、
前記ゲート電極と電気的に接続し、前記第2の絶縁層上にあるゲートパッドと、
をさらに備える請求項2または請求項3に記載の半導体装置。 - 前記第2の窒化物半導体層は凹部を有し、前記ゲート電極は少なくとも一部が前記凹部に設けられる請求項1ないし請求項4のいずれか1項に記載の半導体装置。
- 前記第1の窒化物半導体層上にあり、前記ゲート電極と対向する第3の窒化物半導体層をさらに備える請求項1ないし請求項4のいずれか1項に記載の半導体装置。
- 前記ドレイン電極と前記ゲート絶縁層の間にあるn型の領域をさらに備える請求項1ないし請求項4のいずれか1項に記載の半導体装置。
- 前記ソース電極と電気的に接続し、前記基板の前記第1の絶縁層がある側とは反対側にあるソースパッドと、
前記ゲート電極と電気的に接続し、前記基板の前記第1の絶縁層がある側とは反対側にあるゲートパッドと、
をさらに備える請求項1ないし請求項3のいずれか1項に記載の半導体装置。 - 前記基板は絶縁性である請求項1ないし請求項8のいずれか1項に記載の半導体装置。
- 基板と、
第1の窒化物半導体層と、
前記基板と前記第1の窒化物半導体層との間にある第1の絶縁層と、
前記第1絶縁層と前記第1窒化物半導体層との間にあるゲート絶縁層と、
前記ゲート絶縁層と前記第1の窒化物半導体層との間にあり、前記第1の窒化物半導体層と接する第2の窒化物半導体層と、
前記第1の絶縁層と前記第2の窒化物半導体層との間にあり、前記第2の窒化物半導体層に電気的に接続されるソース電極と、
前記第1の絶縁層と前記ゲート絶縁層との間にあるゲート電極と、
前記基板と第2の窒化物半導体層との間にあり、前記第2の窒化物半導体層および前記基板と電気的に接続されるドレイン電極と、
を備える半導体装置。 - 前記基板の第1の絶縁層がある側とは反対側にある第1導電層をさらに備える請求項10に記載の半導体装置。
- 前記基板と前記第1の絶縁層の間にあり、前記ドレイン電極と電気的に接続する第2導電層をさらに備える請求項10または請求項11に記載の半導体装置。
- 前記基板は導電性である請求項10ないし請求項12のいずれか1項に記載の半導体装置。
- 前記第1の窒化物半導体層はGaNである請求項1ないし請求項13のいずれか1項に記載の半導体装置。
- 前記第2の窒化物半導体層はAlx1Ga(1−x1)N(0<x1≦1)である請求項1ないし請求項14のいずれか1項に記載の半導体装置。
- 前記第3の窒化物半導体層はAlx1Ga(1−x1)N(0≦x1<1)である請求項6に記載の半導体装置。
- 前記第1の窒化物半導体層は20nm以上1μm以下である請求項1ないし請求項16のいずれか1項に記載の半導体装置。
- 第1の基板に、バッファ層、第2の窒化物半導体層、第1の窒化物半導体層、ゲート絶縁層を順に積層する工程と、
前記ゲート絶縁層にゲート電極を形成する工程と、
前記ゲート絶縁層の一部を除去し、ソース電極を形成する工程と、
前記ゲート電極に接続されるゲート配線を形成する工程と、
前記ゲート配線、前記ゲート電極、前記ゲート絶縁層を覆う層間絶縁層を形成する工程と、
前記層間絶縁層に、第2の基板に形成された接合絶縁層を接合する工程と、
前記第1の基板および前記バッファ層を除去し前記第2の窒化物半導体層を露出させ、前記第2の窒化物半導体層にドレイン電極を形成する工程と、
を備える半導体装置の製造方法。 - 前記ソース電極と接続されるソースパッドを形成する工程と、
前記ゲート配線と接続されるゲートパッドを形成する工程と、
をさらに備える請求項18に記載の半導体装置の製造方法。
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