JP6976858B2 - 積層体 - Google Patents

積層体 Download PDF

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Publication number
JP6976858B2
JP6976858B2 JP2017558338A JP2017558338A JP6976858B2 JP 6976858 B2 JP6976858 B2 JP 6976858B2 JP 2017558338 A JP2017558338 A JP 2017558338A JP 2017558338 A JP2017558338 A JP 2017558338A JP 6976858 B2 JP6976858 B2 JP 6976858B2
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Japan
Prior art keywords
layer
substrate
oxide semiconductor
metal oxide
electrode layer
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JP2017558338A
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English (en)
Japanese (ja)
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JPWO2017111174A1 (ja
Inventor
義弘 上岡
隆司 関谷
重和 笘井
絵美 川嶋
勇輝 霍間
基浩 竹嶋
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Idemitsu Kosan Co Ltd
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Idemitsu Kosan Co Ltd
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Publication of JPWO2017111174A1 publication Critical patent/JPWO2017111174A1/ja
Priority to JP2021095082A priority Critical patent/JP2021141337A/ja
Application granted granted Critical
Publication of JP6976858B2 publication Critical patent/JP6976858B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

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  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Laminated Bodies (AREA)
JP2017558338A 2015-12-25 2016-12-26 積層体 Active JP6976858B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021095082A JP2021141337A (ja) 2015-12-25 2021-06-07 積層体

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2015254555 2015-12-25
JP2015254555 2015-12-25
JP2016159352 2016-08-15
JP2016159352 2016-08-15
PCT/JP2016/088765 WO2017111174A1 (ja) 2015-12-25 2016-12-26 積層体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021095082A Division JP2021141337A (ja) 2015-12-25 2021-06-07 積層体

Publications (2)

Publication Number Publication Date
JPWO2017111174A1 JPWO2017111174A1 (ja) 2018-10-18
JP6976858B2 true JP6976858B2 (ja) 2021-12-08

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2017558338A Active JP6976858B2 (ja) 2015-12-25 2016-12-26 積層体
JP2021095082A Withdrawn JP2021141337A (ja) 2015-12-25 2021-06-07 積層体

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2021095082A Withdrawn JP2021141337A (ja) 2015-12-25 2021-06-07 積層体

Country Status (6)

Country Link
US (1) US11189737B2 (OSRAM)
JP (2) JP6976858B2 (OSRAM)
KR (1) KR102382656B1 (OSRAM)
CN (1) CN108475702B (OSRAM)
TW (1) TWI795349B (OSRAM)
WO (1) WO2017111174A1 (OSRAM)

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WO2019046630A1 (en) 2017-08-31 2019-03-07 Micron Technology, Inc. SEMICONDUCTOR DEVICES, TRANSISTORS, AND ASSOCIATED METHODS FOR CONTACTING METAL OXIDE SEMICONDUCTOR DEVICES
KR20220066173A (ko) 2017-08-31 2022-05-23 마이크론 테크놀로지, 인크 반도체 장치, 하이브리드 트랜지스터 및 관련 방법
JP6802818B2 (ja) * 2018-03-06 2020-12-23 株式会社東芝 半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法
WO2020017330A1 (ja) 2018-07-17 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP7093329B2 (ja) * 2019-09-02 2022-06-29 信越化学工業株式会社 積層構造体、半導体装置及び半導体システム
CN110634959B (zh) * 2019-09-20 2021-01-08 山东大学 一种基于igzo肖特基二极管动态调控超材料的方法
CN110890280B (zh) * 2019-11-27 2024-02-06 山东大学 一种利用钯/钯氧化物双层肖特基电极制备氧化物半导体肖特基二极管的方法
CN111129166B (zh) * 2019-12-13 2023-02-07 合肥中科微电子创新中心有限公司 氧化镓基半导体结构及其制备方法
CN111081765B (zh) * 2019-12-31 2021-06-29 山东大学 一种基于铟铝锌氧化物的肖特基二极管及其制备方法
CN111081788B (zh) * 2019-12-31 2021-06-29 山东大学 一种底部为肖特基接触的铟铝锌氧化物二极管及其制备方法
KR20220134639A (ko) * 2020-02-07 2022-10-05 가부시키가이샤 플로스피아 반도체 소자 및 반도체 장치
TW202147529A (zh) * 2020-02-07 2021-12-16 日商Ｆｌｏｓｆｉａ股份有限公司 半導體元件及半導體裝置
JP7500293B2 (ja) * 2020-06-12 2024-06-17 パナソニックホールディングス株式会社 Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物基板、及びｉｉｉ族窒化物結晶の製造方法
US20240162357A1 (en) * 2021-03-30 2024-05-16 Idemitsu Kosan Co.,Ltd. Photoelectric conversion element and method for manufacturing photoelectric conversion element
KR20240041395A (ko) * 2022-09-22 2024-04-01 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN120570083A (zh) * 2023-01-31 2025-08-29 日亚化学工业株式会社 二极管、使用二极管的整流电路及接收整流天线

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KR101796909B1 (ko) 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비선형 소자, 표시 장치, 및 전자 기기
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KR102267094B1 (ko) * 2013-08-19 2021-06-18 이데미쓰 고산 가부시키가이샤 산화물 반도체 기판 및 쇼트키 배리어 다이오드
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Also Published As

Publication number Publication date
TW201737485A (zh) 2017-10-16
US11189737B2 (en) 2021-11-30
TWI795349B (zh) 2023-03-11
WO2017111174A1 (ja) 2017-06-29
US20200266304A1 (en) 2020-08-20
JP2021141337A (ja) 2021-09-16
JPWO2017111174A1 (ja) 2018-10-18
CN108475702A (zh) 2018-08-31
KR102382656B1 (ko) 2022-04-04
CN108475702B (zh) 2021-11-23
KR20180099655A (ko) 2018-09-05

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