JP6971344B2 - ノズル設置治具およびそれを用いたノズル取付方法 - Google Patents
ノズル設置治具およびそれを用いたノズル取付方法 Download PDFInfo
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- JP6971344B2 JP6971344B2 JP2020023868A JP2020023868A JP6971344B2 JP 6971344 B2 JP6971344 B2 JP 6971344B2 JP 2020023868 A JP2020023868 A JP 2020023868A JP 2020023868 A JP2020023868 A JP 2020023868A JP 6971344 B2 JP6971344 B2 JP 6971344B2
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- nozzle
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B15/00—Details of spraying plant or spraying apparatus not otherwise provided for; Accessories
- B05B15/60—Arrangements for mounting, supporting or holding spraying apparatus
- B05B15/65—Mounting arrangements for fluid connection of the spraying apparatus or its outlets to flow conduits
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L27/00—Adjustable joints; Joints allowing movement
- F16L27/08—Adjustable joints; Joints allowing movement allowing adjustment or movement only about the axis of one pipe
- F16L27/0804—Adjustable joints; Joints allowing movement allowing adjustment or movement only about the axis of one pipe the fluid passing axially from one joint element to another
- F16L27/0837—Adjustable joints; Joints allowing movement allowing adjustment or movement only about the axis of one pipe the fluid passing axially from one joint element to another the joint elements being bends
- F16L27/0845—Adjustable joints; Joints allowing movement allowing adjustment or movement only about the axis of one pipe the fluid passing axially from one joint element to another the joint elements being bends forming an angle of 90 degrees
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
- H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L2201/00—Special arrangements for pipe couplings
- F16L2201/10—Indicators for correct coupling
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Automation & Control Theory (AREA)
- Manufacturing & Machinery (AREA)
Description
ノズルが内部に配置される処理容器の下端開口の周辺部に当接する基準面を有する下プレートと、前記下プレートに固定され、前記基準面に対して上方に伸びるフレーム部と、前記フレーム部に固定され、前記処理容器内の前記ノズルの位置を検出するセンサを有する上プレートと、前記上プレートに固定され、前記センサの検出した結果に応じて作業者への通知を行う通知器と、を備えた技術が提供される。
第1ノズル233aは、Oリング416を介してノズルポート210に装着される。第1ノズル233aの上流端には第1ガス供給管232aの下流端が向かい合って配置される。第1ガス供給管232aは、搬送するガスに対する耐腐食性等を考慮して材質が選択され、例えばステンレス鋼等で構成される。
11:フレーム部
12:下プレート
13:上プレート
14:センサ部
15:点灯部(通知器)
Claims (5)
- ノズルが内部に配置される処理容器の下端開口の周辺部に当接する基準面を有する下プレートと、
前記下プレートに固定され、前記基準面に対して上方に伸びるフレーム部と、
前記フレーム部に固定され、前記処理容器内の前記ノズルの位置を検出するセンサ部を有する上プレートと、
前記上プレートに固定され、前記センサ部の検出した結果に応じて作業者への通知を行う通知器と、
を備えたノズル設置治具。 - 前記センサ部は、前記下プレートが前記処理容器の下端開口の周辺部の下端に当接し前記上プレートが前記処理容器の内面に接触している状態で、前記処理容器の半径方向における前記ノズルの位置を検出する、請求項1のノズル設置治具。
- 前記センサ部は接触式センサであり、
前記通知器は、前記ノズルが所定の適正位置よりも前記半径方向における内側に傾斜しているときに前記センサ部に接触すると、点灯する請求項2のノズル設置治具。 - 前記センサ部と前記通知器は複数組設けられ、前記センサ部は、前記処理容器内に隣接して配置された複数のノズルの位置をそれぞれ検出し、前記通知器は異なる色で点灯する請求項1のノズル設置治具。
- 請求項1のノズル設置治具を用いたノズル取付方法であって、
前記処理容器内に前記ノズルを配置するステップと、
前記処理容器に前記ノズル設置治具を装着するステップと、
前記通知器の通知が、前記処理容器の半径方向における前記ノズルの位置が適正であることを示すようになるまで、前記ノズルの傾きを調整するステップと、
を有するノズル取付方法。
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020023868A JP6971344B2 (ja) | 2020-02-14 | 2020-02-14 | ノズル設置治具およびそれを用いたノズル取付方法 |
| CN202011531133.3A CN113265645B (zh) | 2020-02-14 | 2020-12-22 | 喷嘴设置夹具以及使用了该喷嘴设置夹具的喷嘴安装方法 |
| KR1020210000193A KR102560404B1 (ko) | 2020-02-14 | 2021-01-04 | 노즐 설치 치구 및 그것을 이용한 노즐 설치 방법 |
| US17/143,704 US11633753B2 (en) | 2020-02-14 | 2021-01-07 | Nozzle installation jig |
| TW110102767A TWI763275B (zh) | 2020-02-14 | 2021-01-26 | 噴嘴設置治具及使用其之噴嘴安裝方法 |
| US18/185,426 US11986847B2 (en) | 2020-02-14 | 2023-03-17 | Nozzle installation jig |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020023868A JP6971344B2 (ja) | 2020-02-14 | 2020-02-14 | ノズル設置治具およびそれを用いたノズル取付方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2021129060A JP2021129060A (ja) | 2021-09-02 |
| JP6971344B2 true JP6971344B2 (ja) | 2021-11-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2020023868A Active JP6971344B2 (ja) | 2020-02-14 | 2020-02-14 | ノズル設置治具およびそれを用いたノズル取付方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11633753B2 (ja) |
| JP (1) | JP6971344B2 (ja) |
| KR (1) | KR102560404B1 (ja) |
| CN (1) | CN113265645B (ja) |
| TW (1) | TWI763275B (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7202409B2 (ja) * | 2021-03-17 | 2023-01-11 | 株式会社Kokusai Electric | 基板処理装置、金属ポート、基板処理方法および半導体装置の製造方法 |
| KR20230026148A (ko) * | 2021-08-17 | 2023-02-24 | 삼성전자주식회사 | 기판 처리 장치 및 이를 이용한 반도체 소자 제조 방법 |
| US12505987B2 (en) | 2022-04-21 | 2025-12-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor processing tool and methods of operation |
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| US4360132A (en) * | 1980-05-15 | 1982-11-23 | Nordson Corporation | Safety control for automatic dispensing gun |
| US4613078A (en) * | 1984-04-09 | 1986-09-23 | Nordson Corporation | Quick replaceable nozzle assembly |
| US5402939A (en) * | 1993-12-22 | 1995-04-04 | Church & Dwight Co., Inc. | Blast nozzle holder |
| JPH09260298A (ja) * | 1996-03-18 | 1997-10-03 | Kokusai Electric Co Ltd | 半導体製造装置の反応ガス導入ノズル支持構造 |
| DE202004007024U1 (de) * | 2004-04-30 | 2004-07-01 | Nordson Corporation, Westlake | Auftragskopf, Auftragsdüsenanordnung, Adapterplatte sowie Montageplatte |
| JP4642787B2 (ja) * | 2006-05-09 | 2011-03-02 | 東京エレクトロン株式会社 | 基板搬送装置及び縦型熱処理装置 |
| JP2009124105A (ja) * | 2007-10-22 | 2009-06-04 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2009224504A (ja) | 2008-03-14 | 2009-10-01 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP5464068B2 (ja) * | 2010-06-14 | 2014-04-09 | 株式会社Sumco | エピタキシャル成長装置における内部部材の位置調整方法 |
| JP5722595B2 (ja) * | 2010-11-11 | 2015-05-20 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
| JP2012151386A (ja) * | 2011-01-21 | 2012-08-09 | Hitachi Kokusai Electric Inc | ノズル取付方法 |
| JP2013187459A (ja) | 2012-03-09 | 2013-09-19 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2013191695A (ja) * | 2012-03-13 | 2013-09-26 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2014165429A (ja) | 2013-02-27 | 2014-09-08 | Tokyo Electron Ltd | インジェクタ取付装置及びインジェクタ取付方法 |
| JP6208591B2 (ja) | 2014-02-13 | 2017-10-04 | 東京エレクトロン株式会社 | インジェクタ保持構造及びこれを用いた基板処理装置 |
| WO2017009997A1 (ja) * | 2015-07-16 | 2017-01-19 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び気化システム |
| JP6505549B2 (ja) | 2015-08-28 | 2019-04-24 | 株式会社Screenホールディングス | ティーチング方法、治具、および、基板処理装置 |
| JP6602230B2 (ja) * | 2016-02-29 | 2019-11-06 | 東京エレクトロン株式会社 | 石英管保持構造及びこれを用いた熱処理装置 |
| JP6680645B2 (ja) * | 2016-08-19 | 2020-04-15 | 株式会社ディスコ | ノズル調節治具 |
| KR101817254B1 (ko) * | 2016-09-23 | 2018-01-10 | 주식회사 동원파츠 | 가스 디스트리뷰터 및 이의 제조방법 |
| JP6550029B2 (ja) * | 2016-09-28 | 2019-07-24 | 株式会社Kokusai Electric | 基板処理装置、ノズル基部および半導体装置の製造方法 |
| JP6749954B2 (ja) | 2018-02-20 | 2020-09-02 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法、プログラム |
-
2020
- 2020-02-14 JP JP2020023868A patent/JP6971344B2/ja active Active
- 2020-12-22 CN CN202011531133.3A patent/CN113265645B/zh active Active
-
2021
- 2021-01-04 KR KR1020210000193A patent/KR102560404B1/ko active Active
- 2021-01-07 US US17/143,704 patent/US11633753B2/en active Active
- 2021-01-26 TW TW110102767A patent/TWI763275B/zh active
-
2023
- 2023-03-17 US US18/185,426 patent/US11986847B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US11986847B2 (en) | 2024-05-21 |
| US20210252544A1 (en) | 2021-08-19 |
| TWI763275B (zh) | 2022-05-01 |
| JP2021129060A (ja) | 2021-09-02 |
| CN113265645B (zh) | 2023-10-31 |
| CN113265645A (zh) | 2021-08-17 |
| US20230211368A1 (en) | 2023-07-06 |
| US11633753B2 (en) | 2023-04-25 |
| KR102560404B1 (ko) | 2023-07-27 |
| TW202131430A (zh) | 2021-08-16 |
| KR20210103933A (ko) | 2021-08-24 |
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